Patents by Inventor Jennifer Leigh Petraglia
Jennifer Leigh Petraglia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11959172Abstract: A gas delivery system includes a 2-port valve including a first valve located between a first port and a second port. A 4-port valve includes a first node connected to a first port and a second port. A bypass path is located between the third port and the fourth port. A second node is located along the bypass path. A second valve is located between the first node and the second node. A manifold block defines gas flow channels configured to connect the first port of the 4-port valve to a first inlet, configured to connect the second port of the 4-port valve to the first port of the 2-port valve, the third port of the 4-port valve to a second inlet, the second port of the 2-port valve to a first outlet, and the fourth port of the 4-port valve to a second outlet.Type: GrantFiled: May 12, 2023Date of Patent: April 16, 2024Assignee: LAM RESEARCH CORPORATIONInventors: Ramesh Chandrasekharan, Antonio Xavier, Frank Loren Pasquale, Ryan Blaquiere, Jennifer Leigh Petraglia, Meenakshi Mamunuru
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Patent number: 11959175Abstract: Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill on demand.Type: GrantFiled: June 22, 2021Date of Patent: April 16, 2024Assignee: Lam Research CorporationInventors: Tuan Nguyen, Eashwar Ranganathan, Shankar Swaminathan, Adrien LaVoie, Chloe Baldasseroni, Ramesh Chandrasekharan, Frank Loren Pasquale, Jennifer Leigh Petraglia
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Publication number: 20230317449Abstract: Various embodiments herein relate to methods and apparatus for depositing doped and undoped silicon-containing films having a high degree of purity. In one example, the method includes exposing the substrate to a first reactant and a second reactant; reacting the first and second reactants with one another to form a silicon-containing material and depositing a portion of the silicon-containing film on the substrate; before the silicon-containing film is complete, performing an impurity reduction operation including: (i) generating a plasma from a plasma generation gas comprising inert gas and hydrogen, where the plasma generation gas is substantially free of oxygen, and (ii) exposing the substrate to the plasma to thereby reduce a concentration of fluorine, carbon, hydrogen, and/or nitrogen in the silicon-containing film; and repeating these operations (or a subset thereof) until the silicon-containing film is deposited to a final thickness.Type: ApplicationFiled: July 27, 2021Publication date: October 5, 2023Inventors: Awnish Gupta, Bart J. Van Schravendijk, Jason Alexander Varnell, Joseph R. Abel, Jennifer Leigh Petraglia, Adrien LaVoie
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Publication number: 20230279548Abstract: A gas delivery system includes a 2-port valve including a first valve located between a first port and a second port. A 4-port valve includes a first node connected to a first port and a second port. A bypass path is located between the third port and the fourth port. A second node is located along the bypass path. A second valve is located between the first node and the second node. A manifold block defines gas flow channels configured to connect the first port of the 4-port valve to a first inlet, configured to connect the second port of the 4-port valve to the first port of the 2-port valve, the third port of the 4-port valve to a second inlet, the second port of the 2-port valve to a first outlet, and the fourth port of the 4-port valve to a second outlet.Type: ApplicationFiled: May 12, 2023Publication date: September 7, 2023Inventors: Ramesh CHANDRASEKHARAN, Antonio Xavier, Frank Loren Pasquale, Ryan Blaquiere, Jennifer Leigh Petraglia, Meenakshi Mamunuru
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Publication number: 20230245896Abstract: Methods and apparatuses for depositing dielectric films into features on semiconductor substrates are described herein. Methods involve depositing dielectric films by using controlled thermal chemical vapor deposition, with periodic passivation operations and densification to modulate film properties.Type: ApplicationFiled: July 21, 2021Publication date: August 3, 2023Inventors: Awnish Gupta, Bart J. Van Schravendijk, Frank Loren Pasquale, Adrien LaVoie, Jason Alexander Varnell, Praneeth Ramasagaram, Joseph R. Abel, Jennifer Leigh Petraglia, Dustin Zachary Austin
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Patent number: 11661654Abstract: A gas delivery system includes a 2-port valve including a first valve located between a first port and a second port. A 4-port valve includes a first node connected to a first port and a second port. A bypass path is located between the third port and the fourth port. A second node is located along the bypass path. A second valve is located between the first node and the second node. A manifold block defines gas flow channels configured to connect the first port of the 4-port valve to a first inlet, configured to connect the second port of the 4-port valve to the first port of the 2-port valve, the third port of the 4-port valve to a second inlet, the second port of the 2-port valve to a first outlet, and the fourth port of the 4-port valve to a second outlet.Type: GrantFiled: April 18, 2018Date of Patent: May 30, 2023Assignee: LAM RESEARCH CORPORATIONInventors: Ramesh Chandrasekharan, Antonio Xavier, Frank Loren Pasquale, Ryan Blaquiere, Jennifer Leigh Petraglia, Meenakshi Mamunuru
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Publication number: 20220136104Abstract: Methods and apparatuses for depositing material onto substrates in a multi-station deposition apparatus having a first station and a second station are provided. One method may include providing a first substrate onto a first pedestal of the first station, providing a second substrate onto a second pedestal of the second station, and for a first part of a deposition process, simultaneously generating a first plasma at the first station while the first pedestal is separated by a first distance from a first showerhead of the first station, thereby depositing a first layer of material onto the first substrate, and a second plasma at the second station while the second pedestal is separated by a second distance from a second showerhead of the second station, thereby depositing a second layer of material onto the second substrate, in which the first distance is different than the second distance.Type: ApplicationFiled: March 6, 2020Publication date: May 5, 2022Inventors: Frank Loren Pasquale, Jennifer Leigh Petraglia, Dinesh Baskar, Adrien LaVoie
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Patent number: 11236422Abstract: A substrate processing system configured to perform a deposition process on a substrate includes a substrate support including a plurality of zones and a plurality of resistive heaters arranged throughout the plurality of zones. The plurality of resistive heaters includes separately-controllable resistive heaters arranged in respective ones of the plurality of zones. A controller is configured to, during the deposition process, control the plurality of resistive heaters to selectively adjust temperatures within the plurality of zones.Type: GrantFiled: November 15, 2018Date of Patent: February 1, 2022Assignee: Lam Research CorporationInventors: Michael Philip Roberts, Ramesh Chandrasekharan, Pulkit Agarwal, Aaron Bingham, Ashish Saurabh, Ravi Kumar, Jennifer Leigh Petraglia
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Publication number: 20210324521Abstract: Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill on demand.Type: ApplicationFiled: June 22, 2021Publication date: October 21, 2021Inventors: Tuan Nguyen, Eashwar Ranganathan, Shankar Swaminathan, Adrien LaVoie, Chloe Baldasseroni, Ramesh Chandrasekharan, Frank Loren Pasquale, Jennifer Leigh Petraglia
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Publication number: 20190376186Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.Type: ApplicationFiled: December 28, 2018Publication date: December 12, 2019Inventors: Jason Dirk Haverkamp, Pramod Subramonium, Joseph L. Womack, Dong Niu, Keith Fox, John B. Alexy, Patrick G. Breiling, Jennifer Leigh Petraglia, Mandyam Ammanjee Sriram, George Andrew Antonelli, Bart J. van Schravendijk
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Publication number: 20190323125Abstract: A gas delivery system includes a 2-port valve including a first valve located between a first port and a second port. A 4-port valve includes a first node connected to a first port and a second port. A bypass path is located between the third port and the fourth port. A second node is located along the bypass path. A second valve is located between the first node and the second node. A manifold block defines gas flow channels configured to connect the first port of the 4-port valve to a first inlet, configured to connect the second port of the 4-port valve to the first port of the 2-port valve, the third port of the 4-port valve to a second inlet, the second port of the 2-port valve to a first outlet, and the fourth port of the 4-port valve to a second outlet.Type: ApplicationFiled: April 18, 2018Publication date: October 24, 2019Inventors: Ramesh Chandrasekharan, Antonio Xavier, Frank Loren Pasquale, Ryan Blaquiere, Jennifer Leigh Petraglia, Meenakshi Mamunuru
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Publication number: 20190153600Abstract: A substrate processing system configured to perform a deposition process on a substrate includes a substrate support including a plurality of zones and a plurality of resistive heaters arranged throughout the plurality of zones. The plurality of resistive heaters includes separately-controllable resistive heaters arranged in respective ones of the plurality of zones. A controller is configured to, during the deposition process, control the plurality of resistive heaters to selectively adjust temperatures within the plurality of zones.Type: ApplicationFiled: November 15, 2018Publication date: May 23, 2019Inventors: Michael Philip Roberts, Ramesh Chandrasekharan, Pulkit Agarwal, Aaron Bingham, Ashish Saurabh, Ravi Kumar, Jennifer Leigh Petraglia