Abstract: An example apparatus includes a semiconductor device layer including a bond pad area, a bond pad on the semiconductor device layer in the bond pad area; a scribe seal on the semiconductor device layer, the scribe seal surrounding the bond pad on at least three sides; and a swarf barrier on the scribe seal, the swarf barrier including: a first portion a first distance from the semiconductor device layer; and a second portion a second distance from the semiconductor device layer, the second distance being larger than the first distance.

Abstract: A device includes a first substrate. The device also includes a barrier structure including a metallic layer on the first substrate, where the barrier structure forms a cavity. The device also includes a second substrate on the metallic layer, where the metallic layer extends between the first substrate and the second substrate, and where the metallic layer includes a sloped edge that contacts the first substrate within the cavity.