Patents by Inventor Jennifer Meng Tseng

Jennifer Meng Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9076661
    Abstract: Described are methods of forming a semiconductor device. Certain methods comprises depositing a film comprising manganese nitride over a dielectric; depositing a copper seed layer over the film; and depositing a copper fill layer over the copper seed layer. Also described are semiconductor devices. Certain semiconductor devices comprise a low-k dielectric layer; a manganese nitride layer overlying the low-k dielectric layer; a seed layer selected from a copper seed layer or electrochemical deposition seed layer overlying the manganese nitride layer; a copper layer overlying the copper seed layer.
    Type: Grant
    Filed: May 30, 2013
    Date of Patent: July 7, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Paul F. Ma, Jennifer Meng Tseng, Mei Chang, Annamalai Lakshmanan, Jing Tang
  • Publication number: 20130292806
    Abstract: Described are methods of forming a semiconductor device. Certain methods comprises depositing a film comprising manganese nitride over a dielectric; depositing a copper seed layer over the film; and depositing a copper fill layer over the copper seed layer. Also described are semiconductor devices. Certain semiconductor devices comprise a low-k dielectric layer; a manganese nitride layer overlying the low-k dielectric layer; a seed layer selected from a copper seed layer or electrochemical deposition seed layer overlying the manganese nitride layer; a copper layer overlying the copper seed layer.
    Type: Application
    Filed: May 30, 2013
    Publication date: November 7, 2013
    Inventors: Paul F. Ma, Jennifer Meng Tseng, Mei Chang, Annamalai Lakshmanan, Jing Tang