Abstract: A method for nondestructive layer defect detection includes projecting radiation such as a laser beam on a surface of the layer. The surface of the layer is heated by the projected radiation so as to melt at least a portion of the layer. An impurity contained in a defect is heated by the projected radiation so as to increase the pressure of the material within the defect sufficiently to cause the impurity to emerge from the defect through the surface of the layer. The layer is then scanned for a visible defect created by the emergence of the impurity from the defect. A wafer scanning system for nondestructive layer defect detection includes a radiation source such as a laser and a wafer support system that supports a semiconductor wafer with a layer formed thereon in alignment with the radiation source.