Abstract: The present invention relates to a porous lithium titanium oxide anode material, a method of manufacturing the same, and a battery comprising the same. The method of manufacturing a porous lithium titanium oxide anode material of the present invention includes the following steps: (A) mixing a lithium salt and an organic acid, and adding a titanium salt immediately; (B) performing a first heat treatment at 300-800° C. for three hours; and (C) performing a second heat treatment at 600-800° C. for ten hours to obtain a porous lithium titanium oxide anode material. The cost of manufacturing the porous lithium titanium oxide anode material can be reduced through the aforementioned method, and a lithium battery having excellent electrochemical properties and cycling stabilities can be produced by the present invention.

Abstract: The present invention relates to a package structure, a packaging substrate and a chip. The package structure includes: a chip including a plurality of electrode pads on a surface thereof; a packaging substrate including a plurality of first conductive pads on a surface thereof; and a plurality of connecting units through which the electrode pads electrically communicate with the first conductive pads, in which the chip or the packaging substrate further includes a first surface finish layer over the electrode pads or the first conductive pads, and the first surface finish layer includes a Ni—Pd alloy layer. Accordingly, the surface finish method applied in a package structure, a packaging substrate and a chip has advantages of simple manufacture, low cost and high reliability.

Abstract: A copper-manganese bonding structure adopted for use on Under Bump Metallurgy (UBM) at solder joints in packaging technology includes an electronic element, at least one soldering material and at least one manganese bonding material. The electronic element has at least one copper conductive portion. The soldering material corresponds to the copper conductive portion. The manganese bonding material is arranged in the copper conductive portion and the soldering material to form bonding between them. The manganese bonding material can reduce the generation of a brittle intermetallic compound Cu3Sn and suppress the generation of voids. The copper conductive portion is not consumed by the generation of the intermetallic compound. Thus the total structure can be protected and improved.

Abstract: The present invention discloses an inductor with a ferromagnetic metal film, which comprises an upper magnetic material layer, a lower magnetic material layer, and a metallic conducting wire. The metallic conducting wire is sandwiched between the upper magnetic material layer and the lower magnetic material layer. Either the upper magnetic material layer or the lower magnetic material layer is a ferromagnetic metal film. The ferromagnetic metal film can effectively converge the magnetic fluxes and enhance the inductance of the inductor. Thus is reduced the thickness of the upper magnetic material layer or lower magnetic material layer and achieved a thin drum inductor.

Abstract: The present invention discloses an improved inductor structure, which applies to the semiconductor field, particularly to a system-on-chip, and which comprises a substrate, a first conductive patterned film, and a first insulating layer formed between the substrate and the first conductive patterned film. The substrate has a base and an accommodation portion formed in the base. A magnetic material is filled into the accommodation portion to form a magnetic region. The accommodation portion is fabricated via etching the base or drilling a through-hole in the base. A plurality of conductive wires is arranged in a spiral way to form the first conductive patterned film. A protective layer covers the surface of the first conductive patterned film and isolates the contact of the first conductive patterned film and moisture.

Abstract: The present invention discloses an electronic package structure, which comprises an electronic element, a plurality of SMA (Shape Memory Alloy) connection portions, and a plurality of solder connection members. One side of the SMA connection portion is joined to the electronic element, and the solder connection member is arranged over the other side of the SMA connection portion. The SMA connection portions can comply with the strains caused by thermal stresses during the operation of the electronic product and can restore the original shape after the thermal stresses disappear. Therefore, the preset invention can prevent the junctions between the SMA connection portions and the electronic element/the solder connection members from the crack or disconnection caused by thermal stresses.

Abstract: The present invention discloses a metallic bonding structure for copper and solder, which applies to connect at least one electronic element. The metallic bonding structure comprises at least one copper-based member and at least one zinc bonding member. The copper-based members are arranged on the electronic element through at least one solder member. The zinc bonding members are arranged between the copper-based members and the solder members. The solder members are tin-based solder bumps.

Abstract: The present invention discloses a method for fabricating concentration-gradient high-frequency ferromagnetic film, wherein the primary material target is arranged exactly below the sputter-coated substrate to achieve the on-substrate concentration uniformity of the components coming from the primary material target; at least one doping target is arranged at a position deviating from the center of the substrate to create a doping concentration gradient on the substrate along a direction, and a stress gradient is thus created on the substrate along the direction of concentration variation. Thus, the as-deposited ferromagnetic material fabricated at ambient temperature can possess the uniaxial anisotropy that a high-frequency ferromagnetic material needs.

Abstract: This invention relates to a composite target material which is prepared a thin film on the substrates via electroplating or electroless plating method. The thin film contains phosphorus or boron atoms. The ratio of phosphorus or boron atoms of the thin film is controlled by the solution or process parameters of electroplating or electroless plating process. The multi-elements functional thin film, which possesses optimum contents of phosphorus or boron atoms by coating process, can be used for high-temperature applications because of its better thermal cyclic properties and mechanical properties.

Abstract: A modification of an anode material, which is used as a carbonaceous material of an anode of a Lithium-ion secondary battery, is characterized in that the surface of the carbonaceous material is plated with Sn—P or Ni—Sn—P nanoparticles. The preparation method comprises the steps of mixing a reductant solution containing phosphorus ions and an oxidant solution containing stannous ions or nickel and stannous ions to form a plating liquid, disposing a carbonaceous material into said plating liquid with pH between 3-5, and heating the environmental temperature up to 80° C.- 85° C. for 2 hours for performing an electroless plating reaction. After the carbonaceous material is cooled to room temperature, cleaning the carbonaceous material by using deionzied water. Finally, baking and drying the carbonaceous material, and a carbonaceous material with surface thereof plated with Sn—P or Ni—Sn—P nanoparticles is obtained.

Abstract: The present invention provides a method for inspecting a connecting surface of a flip chip to solve problems that the grinding, polishing and chemical etching method is used for making a sample. The present invention utilizes ion beam etching technology for making and processing a sample of the flip chip (FC). The ion beam etching technology includes two modes: keeping the energy of ion beam and increasing the etching time; and keeping the etching time and increasing the ion beam energy. The ion beam etching technology can remove a deforming portion between the solder ball and the metal pad, which is connected thereto because of the grinding and polishing. Specially, it is easy to analyse a sample of a scanning electron microscope (SEM) which includes an intermetallic compound formed between the solder ball and the metal pad connected thereto.

Abstract: A mold for press-molding glass elements is disclosed, which comprises a substrate and a protective film; wherein the protective film, being arranged on the substrate, is made of molybdenum-ruthenium (Mo—Ru) alloy instead of those precious metal alloys such as platinum-iridium (Pt—Ir) alloy, iridium-rhenium (Ir—Re) alloy and iridium- ruthenium (Ir—Ru) alloy, etc., being used as the protective film of prior-art molds. According, the mold of the invention can be manufactured at a comparatively lower cost while is capable of being used for press-molding glass elements of high precision and high softening point.

Abstract: The present invention provides a method for inspecting a connecting surface of a flip chip to solve problems that the grinding, polishing and chemical etching method is used for making a sample. The present invention utilizes ion beam etching technology for making and processing a sample of the flip chip (FC). The ion beam etching technology includes two modes: keeping the energy of ion beam and increasing the etching time; and keeping the etching time and increasing the ion beam energy. The ion beam etching technology can remove a deforming portion between the solder ball and the metal pad, which is connected thereto because of the grinding and polishing. Specially, it is easy to analyse a sample of a scanning electron microscope (SEM) which includes an intermetallic compound formed between the solder ball and the metal pad connected thereto.