Abstract: A method of epitaxial growth of a germanium film on a silicon substrate includes the steps of: providing a silicon substrate, placing the silicon substrate in a vacuum chamber, heating the silicon substrate to a temperature that is lower than 300° C., and forming a monocrystalline germanium film on the silicon substrate in the vacuum chamber, by employing an electron cyclotron resonance chemical vapor deposition (ECR-CVD) approach, wherein the step of forming a monocrystalline germanium film on the silicon substrate in the vacuum chamber further includes dissociating a reaction gas introduced into the vacuum chamber in utilization of a microwave source, such that the monocrystalline germanium film is deposited on the silicon substrate, and wherein the reaction gas includes at least germane (GeH4) and hydrogen gas (H2).

Abstract: A metal buffer layer assisted guided mode resonance (GMR) biosensor is disclosed. The GMR biosensor includes a substrate, a metal buffer layer and a waveguide layer. The metal buffer layer is disposed on the substrate and the waveguide layer is disposed on the metal buffer layer. The metal buffer layer, which is disposed adjacent to the waveguide layer, can carry out the total reflection and provide extra phase compensation of the total reflection at the same time. Accordingly, the propagation constant of the resonance wave would be much closer to the sensitivity of the phase, and the resonance electric field of the GMR biosensor would be much closer to the sensitive area. Consequently, the sensitivity of the GMR biosensor could be improved.

Abstract: The present invention relates to a method for manufacturing silicon thin-film solar cells, including: providing a substrate; forming a first electrode on the substrate; forming a first doped semiconductor layer on the first electrode by chemical vapor deposition; forming an intrinsic layer on the first doped semiconductor layer by chemical vapor deposition, where the intrinsic layer includes a plurality of amorphous/nanocrystalline silicon layers, and the intrinsic layer has various energy bandgaps formed by varying average grain sizes of the amorphous/nanocrystalline silicon layers; forming a second doped semiconductor layer on the intrinsic layer by chemical vapor deposition, where one of the first doped semiconductor layer and the second doped semiconductor layer is a p-type amorphous silicon layer and the other is an n-type amorphous/nano-microcrystalline silicon layer; and forming a second electrode on the second doped semiconductor layer.

Abstract: A diffraction grating recording medium including a waveguide layer and a grating structure layer is provided. The waveguide layer has a reflective surface and a light incident surface, in which a thickness of the waveguide layer is between 100 nanometers and 2 micrometers, and the reflective surface reflects a light that enters the waveguide layer from the light incident layer. The grating structure layer is disposed on the light incident surface of the waveguide layer, in which the grating structure layer has a plurality of diffractive elements, and the arranging period of the diffractive elements is between 50 nanometers and 900 nanometers.

Abstract: The present invention is a yellow-green phosphor material with a high luminescence intensity. The present invention is suitable for excitation by ultraviolet or blue light. The phosphor material is made of a phosphate compound with a chemical formula of LiZn1-xPO4:Mx(0<x<0.2). The host lattice is LiZn1-xPO4 and the luminescent center is Mx, which is a transition metal element. The present invention is easily and fast fabricated for mass production and has a fine color purity and a good thermal stability.

Abstract: A waveguide has a hollow center. The waveguide has dielectric tubes which have a geometric arrangement, like a triangle-lattice arrangement. A laser transmitted in the waveguide is confined and is emitted out with a narrow expending angle. Hence, the laser is emitted straightly forwarded and has a low power loss. The present invention is suitable for using in a high-power laser and obtaining a directive microwave.

Abstract: An optical diode structure includes a semiconductor substrate, a luminous layer, a first type semiconductor layer and a second type semiconductor. The luminous layer is disposed over the semiconductor substrate for emitting light. The first type semiconductor layer is formed between the semiconductor substrate and the luminous layer. The second type semiconductor layer has a first surface and a second surface. The first surface is in contact with the luminous layer. A rough-surfaced grating structure is formed in the second surface for modulating the light emitted by the luminous layer, thereby increasing light extraction efficiency of the luminance layer.

Abstract: A guided mode resonance solar cell includes a solar cell body and a guided mode resonance unit. The solar cell body is used for converting optical energy into electrical energy. The guided mode resonance unit is formed on the solar cell body, and includes a grating structure and a waveguide structure. The grating structure includes multiple sub-wavelength light pillars. When a light emitted from a light source is incident onto the grating structure, a resonant of the light occurs in the grating structure to facilitate trapping the light in the waveguide structure and elongating an optical path length.

Abstract: A phosphor material composition for producing blue phosphor by the excitation of UV light and a method for making the same. The phosphor material is an alkaline-earth silicates compound with a chemical formula of A2-xSiO4:Cex. A includes one or more elements selected from the collection of Ba, Sr and Ca alkaline-earth metals. The host is A2-xSiO4 and the activator is Ce3+. The characteristic of this invention is the blue phosphor material with a high luminescence intensity that can be excited by UV light. In addition, the material in this invention is easy and fast to prepare in a large amount, and the material itself has advantage such as color purity and thermal stability, so as to have a high industrial value.

Abstract: An mold having a sub-micron, or even nano, structure is fabricated. The mold is a porous aluminum oxide mold. With the mold, a sub-micron pattern is easily imprinted on a large surface of a substrate or a LED. No expensive equipment is necessary. The fabricating process is fast and cheap and thus meets the needs of producers.

Abstract: A phosphor can be excited by light emitting diode (LED) to emit a red light. The phosphor has high emission efficiency. Owing to a sensitizer is used in the phosphor, the phosphor can be excited at the wavelength of 380˜400 nm. Moreover, the excitation efficiency of the wavelength shorter than 370 nm can be increased. The phosphor has a chemical formula of A1-x-y-zBixByCzMoO4.

Abstract: A diffraction grating recording medium including a waveguide layer and a grating structure layer is provided. The waveguide layer has a reflective surface and a light incident surface, in which a thickness of the waveguide layer is between 100 nanometers and 2 micrometers, and the reflective surface reflects a light that enters the waveguide layer from the light incident layer. The grating structure layer is disposed on the light incident surface of the waveguide layer, in which the grating structure layer has a plurality of diffractive elements, and the arranging period of the diffractive elements is between 50 nanometers and 900 nanometers.

Abstract: A phosphor material composition for producing blue phosphor by the excitation of UV light and a method for making the same. The phosphor material is an alkaline-earth silicates compound with a chemical formula of A2-xSiO4:Cex. A includes one or more elements selected from the collection of Ba, Sr and Ca alkaline-earth metals. The host is A2-xSiO4 and the activator is Ce3+. The characteristic of this invention is the blue phosphor material with a high luminescence intensity that can be excited by UV light. In addition, the material in this invention is easy and fast to prepare in a large amount, and the material itself has advantage such as color purity and thermal stability, so as to have a high industrial value.

Abstract: A structure of light emitting diode (LED) effectively reduces its spectral width. The LED structure is applied in a three color mixing of a backlight module to broaden a color space and to improve a saturation of a color display. A grating structure is used as a waveguide layer to coordinate with the LED structure. The present invention does not affect the original thermo and electrical characteristics of the LED structure and has a simple fabrication method.

Abstract: A waveguide has a hollow center. The waveguide has dielectric tubes which have a geometric arrangement, like a triangle-lattice arrangement. A laser transmitted in the waveguide is confined and is emitted out with a narrow expending angle. Hence, the laser is emitted straightly forwarded and has a low power loss. The present invention is suitable for using in a high-power laser and obtaining a directive microwave.

Abstract: The present invention is a yellow-green phosphor material with a high luminescence intensity. The present invention is suitable for excitation by ultraviolet or blue light. The phosphor material is made of a phosphate compound with a chemical formula of LiZn1-xPO4:Mx (0<x<1). The host lattice is LiZn1-xPO4 and the luminescent center is Mx, which is a transition metal element. The present invention is easily and fast fabricated for mass production and has a fine color purity and a good thermal stability.

Abstract: A mold having a sub-micro, or even nano, structure is fabricated. The mold is a porous mold. With the mold, a sub-micro pattern is easily imprinted on a large surface of a substrate or a LED. No expansive equipment is necessary. The fabricating process is fast and cheap; and thus meets producer's needs.

Abstract: A silicon bulk-micromachining technology is used to fabricate a GMR filter by exploiting the structure of a suspended silicon nitride (SiNx) membrane on the silicon substrate. A first silicon nitride (SiNx) thin film and a second silicon nitride (SiNx) thin film are formed on opposite sides of the silicon substrate. A first opening is defined in the first silicon nitride (SiNx) thin film, and a grating structure is defined in the second silicon nitride (SiNx) thin film. By etching off a portion of the silicon substrate exposed from the first opening until a portion of the second silicon nitride (SiNx) thin film is exposed from the first opening, a light path space is defined.

Abstract: A silicon bulk-micromachining technology is used to fabricate a GMR filter by exploiting the structure of a suspended silicon nitride (SiNx) membrane on the silicon substrate. A first silicon nitride (SiNx) thin film and a second silicon nitride (SiNx) thin film are formed on opposite sides of the silicon substrate. A first opening is defined in the first silicon nitride (SiNx) thin film, and a grating structure is defined in the second silicon nitride (SiNx) thin film. By etching off a portion of the silicon substrate exposed from the first opening until a portion of the second silicon nitride (SiNx) thin film is exposed from the first opening, a light path space is defined.

Abstract: A structure of a submount for thermal package has a high heat dissipation and a low spreading thermal resistance. The submount has a specific ratio of height to side length.