Patents by Inventor Jens Angermann

Jens Angermann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ORGANIC ELECTRONIC DEVICE COMPRISING A COMPOUND OF FORMULA (1), DISPLAY DEVICE COMPRISING THE ORGANIC ELECTRONIC DEVICE AS WELL AS COMPOUNDS OF FORMULA (1) FOR USE IN ORGANIC ELECTRONIC DEVICES
    Publication number: 20230422603
    Abstract: The present invention relates to an organic electronic device comprising a semiconductor layer which comprises a compound of formula (1).
    Type: Application
    Filed: November 12, 2021
    Publication date: December 28, 2023
    Inventors: Vladimir Uvarov, Markus Hummert, Thomas Rosenow, Steffen Runge, Regina Luschtinetz, Oliver Langguth, Jens Angermann
  • Organic Electronic Device Comprising a Substrate, an Anode Layer, a Cathode Layer, at Least One First Emission Layer, and a Hole Injection Layer That Comprises a Metal Complex
    Publication number: 20230217677
    Abstract: The present invention relates to an organic electronic device comprising a substrate (110), an anode layer (120), a cathode layer (190), at least one first emission layer (150), and a hole injection layer (130), wherein • - the hole injection layer comprises a metal complex, wherein • - the metal complex comprises at least one electropositive metal atom having an electro-negativity value according to Allen of less than 2.
    Type: Application
    Filed: March 19, 2021
    Publication date: July 6, 2023
    Inventors: Moo Jin Park, Thomas Rosenow, Regina Luschtinetz, Vladimir Uvarov, Jens Angermann, Kai Gilge, Steffen Runge, Annette Steudel
  • N-Doped Semiconducting Material Comprising Phosphine Oxide Matrix and Metal Dopant
    Publication number: 20210202842
    Abstract: The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.
    Type: Application
    Filed: February 25, 2021
    Publication date: July 1, 2021
    Inventors: Omrane Fadhel, Carsten Rothe, Jan Birnstock, Ansgar Werner, Kai Gilge, Jens Angermann, Mike Zöllner, Francisco Bloom, Thomas Rosenow, Tobias Canzler, Tomas Kalisz, Ulrich Denker
  • N-Doped Semiconducting Material Comprising Phosphine Oxide Matrix and Metal Dopant
    Publication number: 20160322568
    Abstract: The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.
    Type: Application
    Filed: December 23, 2014
    Publication date: November 3, 2016
    Inventors: Omrane Fadhel, Carsten Rothe, Jan Birnstock, Ansgar Werner, Kai Gilge, Jens Angermann, Mike Zöllner, Francisco Bloom, Thomas Rosenow, Tobias Canzler, Tomas Kalisz, Ulrich Denker