Patents by Inventor Jens Arno STEINHOFF

Jens Arno STEINHOFF has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Radiation source apparatus, lithographic apparatus, method of generating and delivering radiation and method for manufacturing a device
    Patent number: 9298110
    Abstract: A contaminant trap is used in an EUV radiation source apparatus. An EUV radiation beam is generated and focused through a low pressure gaseous atmosphere into a virtual source point. The EUV radiation creates a plasma in the low pressure hydrogen atmosphere through which it passes. A contaminant trap including electrodes is located in or around radiation beam as it approaches the virtual source point. A DC biasing source is connected to the electrodes to create an electric field oriented to deflect out of the beam path contaminant particles that have been negatively charged by the plasma. Additional RF electrodes and/or an ionizer enhance the plasma to increase the charging of the particles. The deflecting electrodes can be operated with RF bias for a short time, to ensure dissipation of the enhanced plasma.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: March 29, 2016
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Jens Arno Steinhoff, Vadim Yevgenyevich Banine, Richard Joseph Bruls, Erik Roelof Loopstra, Hendrik Antony Johannes Neerhof, Adrianus Johannes Maria Van Dijk, Andrei Mikhailovich Yakunin, Luigi Scaccabarozzi
  • Gas contamination sensor, lithographic apparatus, method of determining a level of contaminant gas and device manufacturing method
    Patent number: 8487279
    Abstract: A gas contamination sensor includes an ion source configured to generate a beam of ions from a sample of gas to be tested, and first and second ion detectors, each positioned to receive ions from the beam of ions that are deflected by different extents. The first ion detector is configured to receive ions generated from a primary gas in the gas being tested, and the second ion detector is configured to receive ions that are generated from the contaminant gas within the sample being tested.
    Type: Grant
    Filed: January 7, 2010
    Date of Patent: July 16, 2013
    Assignee: ASML Netherlands B.V.
    Inventor: Jens Arno Steinhoff
  • RADIATION SOURCE APPARATUS, LITHOGRAPHIC APPARATUS, METHOD OF GENERATING AND DELIVERING RADIATION AND METHOD FOR MANUFACTURING A DEVICE
    Publication number: 20110222040
    Abstract: A contaminant trap is used in an EUV radiation source apparatus. An EUV radiation beam is generated and focused through a low pressure gaseous atmosphere into a virtual source point. The EUV radiation creates a plasma in the low pressure hydrogen atmosphere through which it passes. A contaminant trap including electrodes is located in or around radiation beam as it approaches the virtual source point. A DC biasing source is connected to the electrodes to create an electric field oriented to deflect out of the beam path contaminant particles that have been negatively charged by the plasma. Additional RF electrodes and/or an ionizer enhance the plasma to increase the charging of the particles. The deflecting electrodes can be operated with RF bias for a short time, to ensure dissipation of the enhanced plasma.
    Type: Application
    Filed: March 11, 2011
    Publication date: September 15, 2011
    Applicant: ASML Netherlands B.V.
    Inventors: Jens Arno STEINHOFF, Vadim Yevgenyevich BANINE, Richard Joseph BRULS, Erik Roelof LOOPSTRA, Hendrik Antony Johannes NEERHOF, Adrianus Johannes Maria VAN DIJK, Andrei Mikhailovich YAKUNIN, Luigi SCACCABAROZZI
  • GAS CONTAMINATION SENSOR, LITHOGRAPHIC APPARATUS, METHOD OF DETERMINING A LEVEL OF CONTAMINANT GAS AND DEVICE MANUFACTURING METHOD
    Publication number: 20100173238
    Abstract: A gas contamination sensor includes an ion source configured to generate a beam of ions from a sample of gas to be tested, and first and second ion detectors, each positioned to receive ions from the beam of ions that are deflected by different extents. The first ion detector is configured to receive ions generated from a primary gas in the gas being tested, and the second ion detector is configured to receive ions that are generated from the contaminant gas within the sample being tested.
    Type: Application
    Filed: January 7, 2010
    Publication date: July 8, 2010
    Applicant: ASML Netherlands B.V.
    Inventor: Jens Arno STEINHOFF