Abstract: A control unit for a motor vehicle is provided. The control unit includes a printed circuit board having a first side and an edge. The first side is delimited by the edge. At least one electronic component is arranged on the first side of the printed circuit board and is electrically conductively connected to the printed circuit board. At least one first conductor loop is arranged on the first side of the printed circuit board and at least one second conductor loop is arranged at a distance from the first conductor loop. The first conductor loop is arranged between the edge and the second conductor loop, and the second conductor loop is arranged between the first conductor loop and the at least one electronic component. An encapsulation surrounds at least the first side, the at least one electronic component, the first conductor loop and the second conductor loop.

Abstract: A control device for a motor vehicle is provided. The control device includes a printed circuit board having a first side and an edge. The first side of the printed circuit board is delimited by the edge. The control device includes at least one electronic component arranged on the first side of the printed circuit board and electrically conductively connected to the printed circuit board). The control device also includes a first conductor loop formed as a resistor and arranged on the first side of the printed circuit board. The first conductor loop is arranged between the edge and the electronic component. The control device also includes an encapsulation of the printed circuit board. The encapsulation surrounds at least the first side, the at least one electronic component and the first conductor loop.

Abstract: A method for magnetizing at least two magnets having different magnetic coercivities, includes the steps of: a) simultaneously exposing the at least two magnets to a first substantially homogeneous magnetic field having a predeterminable first field strength and a first magnetic field direction for completely magnetizing the magnets in the first magnetic field direction; b) simultaneously exposing the magnets magnetized in step a) to a second substantially homogeneous magnetic field having a predeterminable second field strength and a second magnetic field direction opposite to the first magnetic field direction such that the at least two magnets are differently magnetized.

Abstract: A method for magnetizing at least two magnets having different magnetic coercivities, includes the steps of: a) simultaneously exposing the at least two magnets to a first substantially homogeneous magnetic field having a predeterminable first field strength and a first magnetic field direction for completely magnetizing the magnets in the first magnetic field direction; b) simultaneously exposing the magnets magnetized in step a) to a second substantially homogeneous magnetic field having a predeterminable second field strength and a second magnetic field direction opposite to the first magnetic field direction such that the at least two magnets are differently magnetized.

Abstract: The disclosure relates to a method for monitoring an electromechanical component of an automation system. The method may include acquiring of a mechanical state variable of the electromechanical component, acquiring of an electrical state variable of the electromechanical component, and determining of a state of the electromechanical component based on a multidimensional characteristic line field with a plurality of states of the electromechanical component, wherein the mechanical state variable and the electrical state variable are associated with each state of the electromechanical component.

Abstract: The disclosure relates to a method for monitoring an electromechanical component of an automation system. The method may include acquiring of a mechanical state variable of the electromechanical component, acquiring of an electrical state variable of the electromechanical component, and determining of a state of the electromechanical component based on a multidimensional characteristic line field with a plurality of states of the electromechanical component, wherein the mechanical state variable and the electrical state variable are associated with each state of the electromechanical component.

Abstract: A polarized relay comprising an electromagnet, a two-pole or three-pole permanent magnet, an armature, and switches, which are mounted in and on a shelf-like support component. The support component accommodates magnetic flux pieces and the permanent magnet in an upper cavity, and the permanent magnet is magnetized while the electromagnet is still outside the support component. Subsequently, the electromagnet is inserted into lower cavity of the support component and the rest of the components of the relay are mounted.

Abstract: An electromechanical relay is provided, comprising a magnetic system and a pivotable armature. A diagnostic switch is arranged on one side of the relay, and the set of contacts of the diagnostic switch is driven by the adjacent leg of the armature. A load switch is arranged on the bottom side of the relay and is driven by the second leg of the armature via an insulating coupling member.

Abstract: In a replacement gate approach, the semiconductor material of the gate electrode structures may be efficiently removed during a wet chemical etch process, while this material may be substantially preserved in electronic fuses. Consequently, well-established semiconductor-based electronic fuses may be used instead of requiring sophisticated metal-based fuse structures. The etch selectivity of the semiconductor material may be modified on the basis of ion implantation or electron bombardment.

Abstract: In a replacement gate approach, the exposure of the placeholder material of the gate electrode structures may be accomplished on the basis of an etch process, thereby avoiding the introduction of process-related non-uniformities, which are typically associated with a complex polishing process for exposing the top surface of the placeholder material. In some illustrative embodiments, the placeholder material may be exposed by an etch process based on a sacrificial mask material.

Abstract: A polarized relay comprising an electromagnet, a two-pole or three-pole permanent magnet, an armature, and switches, which are mounted in and on a shelf-like support component. The support component accommodates magnetic flux pieces and the permanent magnet in an upper cavity, and the permanent magnet is magnetized while the electromagnet is still outside the support component. Subsequently, the electromagnet is inserted into lower cavity of the support component and the rest of the components of the relay are mounted.

Abstract: An electromechanical relay is provided, comprising a magnetic system and a pivotable armature. A diagnostic switch is arranged on one side of the relay, and the set of contacts of the diagnostic switch is driven by the adjacent leg of the armature. A load switch is arranged on the bottom side of the relay and is driven by the second leg of the armature via an insulating coupling member.

Abstract: Apparatus for semiconductor device structures and related fabrication methods are provided. One method for fabricating a semiconductor device structure involves forming a layer of dielectric material overlying a doped region formed in a semiconductor substrate adjacent to a gate structure and forming a conductive contact in the layer of dielectric material. The conductive contact overlies and electrically connects to the doped region. The method continues by forming a second layer of dielectric material overlying the conductive contact, forming a voided region in the second layer overlying the conductive contact, forming a third layer of dielectric material overlying the voided region, and forming another voided region in the third layer overlying at least a portion of the voided region in the second layer. The method continues by forming a conductive material that fills both voided regions to contact the conductive contact.

Abstract: Generally, the subject matter disclosed herein relates to modern sophisticated semiconductor devices and methods for forming the same, wherein electrical interconnects between circuit elements based on a buried sublevel metallization may provide improved transistor density. One illustrative method disclosed herein includes forming a contact dielectric layer above first and second transistor elements of a semiconductor device, and after forming the contact dielectric layer, forming a buried conductive element below an upper surface of the contact dielectric layer, the conductive element providing an electrical connection between the first and second transistor elements.

Abstract: Upon forming a complex metallization system, the parasitic capacitance between metal lines of adjacent metallization layers may be reduced by providing a patterned etch stop material. In this manner, the patterning process for forming the via openings may be controlled in a highly reliable manner, while, on the other hand, the resulting overall dielectric constant of the metallization system may be reduced, thereby also significantly reducing the parasitic capacitance between stacked metal lines.

Abstract: When forming metal silicide regions, such as nickel silicide regions, in sophisticated transistors requiring a shallow drain and source dopant profile, superior controllability may be achieved by incorporating a silicide stop layer. To this end, in some illustrative embodiments, a carbon species may be incorporated on the basis of an implantation process in order to significantly modify the metal diffusion during the silicidation process. Consequently, an increased thickness of the metal silicide may be provided, while not unduly increasing the probability of creating contact failures.

Abstract: A semiconductor device includes a first metallization layer positioned above a substrate of the semiconductor device, the metallization layer including a dielectric material and a copper-containing metal region embedded in the dielectric material. The semiconductor device also includes a conductive barrier layer positioned along substantially an entirety of an interface between the copper-containing metal region and the dielectric material, the conductive barrier layer including a copper/silicon compound that is in direct contact with the dielectric material along substantially the entirety of the interface.

Abstract: The present invention relates to a vehicle seat having a seat part and having at least one backrest part which is pivotable about an axis of rotation relative to the seat part, and having a spring means which is effective between the seat part and the backrest part, wherein the backrest part comprises at least a backrest rear wall, backrest upholstery and a backrest cover. According to the invention, a spring means designed as a torsion spring is in each case arranged completely within the corresponding backrest part, is supported at the first end thereof on the backrest rear wall and acts at the second end thereof opposite the first end on an intermediate piece or on a stop of the intermediate piece, wherein the intermediate piece is arranged on the axis of rotation and is fastened to a bearing in a manner fixed relative to the frame.

Abstract: In complex semiconductor devices, sophisticated ULK materials may be used in metal line layers in combination with a via layer of enhanced mechanical stability by increasing the amount of dielectric material of superior mechanical strength. Due to the superior mechanical stability of the via layers, reflow processes for directly connecting the semiconductor die and a package substrate may be performed on the basis of a lead-free material system without unduly increasing yield losses.

Abstract: Upon forming a complex metallization system, the parasitic capacitance between metal lines of adjacent metallization layers may be reduced by providing a patterned etch stop material. In this manner, the patterning process for forming the via openings may be controlled in a highly reliable manner, while, on the other hand, the resulting overall dielectric constant of the metallization system may be reduced, thereby also significantly reducing the parasitic capacitance between stacked metal lines.