Abstract: A semiconductor component that is designed as a trench MISFET. The semiconductor component includes a substrate made of gallium nitride (GaN), a drift layer situated thereon, a barrier layer, and a source region situated thereabove. The source region includes a gate trench that extends from the source region into the underlying barrier layer.

Abstract: An antenna structure for a contactless wearable structure having a plurality of antenna tracks on the substrate, the opposite ends of which are connectable to form an antenna when the substrate is bent, a plurality of capacitor elements on the substrate that are couplable to the antenna for adjusting the resonance frequency of the antenna, and at least one predefined separation region, by means of which it is possible to adjust which of the plurality of capacitor elements are electrically conductively connectable to the antenna when the substrate is bent, in order to form at least one capacitor with a predetermined total capacitance that is electrically conductively coupled to the antenna.

Abstract: A semiconductor component designed as a vertical HEMT. The semiconductor component includes a substrate made of gallium nitride (GaN), a drift layer arranged thereon, and a heteroepitaxial structure which is arranged thereabove, is laterally contacted by source electrodes and is suitable for providing a conductive channel by forming a two-dimensional electron gas.

Abstract: A chip arrangement including a chip module which includes a chip, a contact-based interface in accordance with ISO 7816 which is electrically conductively connected to the chip, and an antenna structure which is electrically conductively connected to the chip and provides a contactless interface, and a carrier which comprises a chip module receptacle and a booster antenna structure which, when the chip module is arranged in the chip module receptacle of the carrier, inductively couples to the antenna structure of the chip module, wherein the chip module is arranged releasably in the chip module receptacle.

Abstract: PROBLEM TO BE SOLVED: To provide a laser jointing method that joints two materials while imparting a sufficient strength thereto and minimizing heat influence. SOLUTION: The method overlaps first and second materials (V1, V2) on each other and irradiates the surface of the first material (V1) with a laser light (103) from the side of the first material (V1). When jointing both materials (V1, V2), the method intermittently irradiating an overlapped part of the first and second materials (V1, V2) with the laser light while moving the laser light (103) to form a welding bead (1) on the surface of the first material (V1), wherein the length of the welding bead (1) is formed gradually shorter.

Abstract: A cell-contacting device for a battery module includes a cell-connector support fitted onto a plurality of storage-cell modules of the battery module and a cell-connector sheet. The cell-connector support has a snap-fit arrangement. The cell-connector sheet is mounted on or in the cell-connector support by the snap-fit arrangement in a form-fitting manner.

Abstract: An electrical connection assembly includes a pair of conductors welded onto one another and a layer including a cyanoacrylate glue disposed in an area between the conductors.

Abstract: A cell-contacting device for a battery module includes a cell-connector support fitted onto a plurality of storage-cell modules of the battery module and a cell-connector sheet. The cell-connector support has a snap-fit arrangement. The cell-connector sheet is mounted on or in the cell-connector support by the snap-fit arrangement in a form-fitting manner.

Abstract: A method of attaching a contact element to a conductor plate includes welding the contact element to a conductive path of the conductor plate in a surface-mounted manner with a laser beam.