Patents by Inventor Jens Karsten Schneider

Jens Karsten Schneider has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7828987
    Abstract: In some implementations, a method is provided in a plasma reactor for etching a trench in an organic planarization layer of a resist structure comprising a photoresist mask structure over a hardmask masking the organic planarization layer. This may include introducing into the plasma reactor an etchant gas chemistry including N2, H2, and O2 and etching a masked organic planarization layer using a plasma formed from the etchant gas chemistry. This may include etching through the planarization layer to form a trench with a single etch step.
    Type: Grant
    Filed: March 20, 2006
    Date of Patent: November 9, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Jens Karsten Schneider, Ying Xiao, Gerardo A. Delgadino
  • Publication number: 20070218679
    Abstract: In some implementations, a method is provided in a plasma reactor for etching a trench in an organic planarization layer of a resist structure comprising a photoresist mask structure over a hardmask masking the organic planarization layer. This may include introducing into the plasma reactor an etchant gas chemistry including N2, H2, and O2 and etching a masked organic planarization layer using a plasma formed from the etchant gas chemistry. This may include etching through the planarization layer to form a trench with a single etch step.
    Type: Application
    Filed: March 20, 2006
    Publication date: September 20, 2007
    Applicant: Applied Materials, Inc.
    Inventors: Jens Karsten Schneider, Ying Xiao, Garardo A. Delgadino