Abstract: The disclosure relates to an illumination system for EUV lithography, as well as related elements, systems and methods. In some embodiments, an illumination system includes a first optical element and a second optical element. The first optical element can include a plurality of first facet elements configured so that, when impinged by respective partial beams of radiation, the plurality of first facet elements produce secondary light sources. The second optical element can include a second optical element including a plurality of second facet elements. Each of the plurality of second facet elements can be assigned to at least one of the plurality of first facet elements. The plurality of second facet elements can be configured to be impinged by the radiation via the first optical element.

Abstract: In general, in one aspect, the invention features a system that includes an illumination system of a microlithography tool, the illumination system including a first component having a plurality of elements. During operation of the system, the elements direct radiation from a source along an optical path to an arc-shaped object field at an object plane of a projection objective, and at least one of the elements has a curved shape that is different from the arc-shape of the object field.

Abstract: A component for setting a scan-integrated illumination energy in an object plane of a microlithography projection exposure apparatus is disclosed. The component includes a plurality of diaphragms which are arranged alongside one another with respect to a direction perpendicular to the scan movement and which differ in their form and the position of which can be altered approximately in the scan direction so that a portion of the illumination energy can be vignetted by at least one diaphragm. The form of the individual diaphragm is specifically adapted to the form of the illumination in a diaphragm plane in which the component is arranged. This has the effect that at least parts of the delimiting edges of two diaphragms always differ in the case of an arbitrary displacement of the diaphragms.

Abstract: An illumination optical system for projection lithography has an optical assembly for guiding illumination light to an object field to be illuminated in an object plane. The illumination optical system divides a bundle of the illumination light into a plurality of part bundles, which are allocated to various illumination directions of the object field illumination. The illumination optical system is configured in such a way that at least some of the part bundles are superimposed on one another in a first superimposition plane according to a first superimposition specification and in a second superimposition plane, which is spaced apart from the first superimposition plane, according to a second superimposition specification. The result is an illumination optical system, in which an influencing and/or a monitoring of an illumination intensity distribution over the object field is made possible, as far as possible without influencing an illumination angle distribution.

Abstract: An illumination optics for microlithography includes an optical assembly for guiding illumination light to an object field to be illuminated in an object plane. The illumination optics can divide an illumination light radiation bundle into a plurality of radiation sub-bundles which are assigned to different illumination angles of the object field illumination. The illumination optics is configured so that at least some of the radiation sub-bundles are superimposed in a superposition plane which is spaced from the object plane and which is not imaged into the object plane in which superposition takes place. This superposition is such that edges of the superimposed radiation sub-bundles coincide at least partially. In some embodiments, a field intensity setting device includes a plurality of adjacent individual diaphragms which at least attenuate illumination light when exposed thereon.

Abstract: The disclosure relates to an illumination system for EUV lithography, as well as related elements, systems and methods. In some embodiments, an illumination system includes a first optical element and a second optical element. The first optical element can include a plurality of first facet elements configured so that, when impinged by respective partial beams of radiation, the plurality of first facet elements produce secondary light sources. The second optical element can include a second optical element including a plurality of second facet elements. Each of the plurality of second facet elements can be assigned to at least one of the plurality of first facet elements. The plurality of second facet elements can be configured to be impinged by the radiation via the first optical element.

Abstract: Illumination optics for EUV microlithography guide an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension and a shorter field dimension, where the ratio is considerably greater than 1.

Abstract: An illumination optical system for projection lithography has an optical assembly for guiding illumination light to an object field to be illuminated in an object plane. The illumination optical system divides a bundle of the illumination light into a plurality of part bundles, which are allocated to various illumination directions of the object field illumination. The illumination optical system is configured in such a way that at least some of the part bundles are superimposed on one another in a first superimposition plane according to a first superimposition specification and in a second superimposition plane, which is spaced apart from the first superimposition plane, according to a second superimposition specification. The result is an illumination optical system, in which an influencing and/or a monitoring of an illumination intensity distribution over the object field is made possible, as far as possible without influencing an illumination angle distribution.

Abstract: In general, in one aspect, the invention features a system that includes an illumination system of a microlithography tool, the illumination system including a first component having a plurality of elements. During operation of the system, the elements direct radiation from a source along an optical path to an arc-shaped object field at an object plane of a projection objective, and at least one of the elements has a curved shape that is different from the arc-shape of the object field.

Abstract: In general, in one aspect, the invention features a system that includes an illumination system of a microlithography tool, the illumination system including a first component having a plurality of elements. During operation of the system, the elements direct radiation from a source along an optical path to an arc-shaped object field at an object plane of a projection objective, and at least one of the elements has a curved shape that is different from the arc-shape of the object field.

Abstract: An illumination system is used to illuminate a specified illumination field of an object surface with EUV radiation. The illumination system has an EUV source and a collector to concentrate the EUV radiation in the direction of an optical axis. A first optical element is provided to generate secondary light sources, and a second optical element is provided at the location of these secondary light sources, the second optical element being part of an optical device which includes further optical elements, and which images the first optical element into an image plane into the illumination field. Between the collector and the illumination field, a maximum of five reflecting optical elements are arranged. These optical elements reflect the main beam either grazingly or steeply. The optical axis, projected onto an illumination main plane, is deflected by more than 30° between a source axis portion and a field axis portion.

Abstract: The disclosure provides an illumination optical system for microlithography that is designed so that, even with a change of illumination setting (e.g., a change in the given illumination conditions in the object field), variation of illumination parameters over the object field is confined within predetermined tolerances.

Abstract: An illumination optics for EUV microlithography illuminates an object field with the aid of an EUV used radiation beam. Preset devices preset illumination parameters. An illumination correction device corrects the intensity distribution and/or the angular distribution of the object field illumination. The latter has an optical component to which the used radiation beam is at least partially applied upstream of the object field and which can be driven in a controlled manner. A detector acquires one of the illumination parameters. An evaluation device evaluates the detector data and converts the latter into control signals. At least one actuator displaces the optical component. During exposures, the actuators are controlled with the aid of the detector signals during the period of a projection exposure. A maximum displacement of below 8 ?m is ensured for edges of the object field towards an object to be exposed.

Abstract: A component for setting a scan-integrated illumination energy in an object plane of a microlithography projection exposure apparatus is disclosed. The component includes a plurality of diaphragms which are arranged alongside one another with respect to a direction perpendicular to the scan movement and which differ in their form and the position of which can be altered approximately in the scan direction so that a portion of the illumination energy can be vignetted by at least one diaphragm. The form of the individual diaphragm is specifically adapted to the form of the illumination in a diaphragm plane in which the component is arranged. This has the effect that at least parts of the delimiting edges of two diaphragms always differ in the case of an arbitrary displacement of the diaphragms.

Abstract: An illumination optics for EUV microlithography guides an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension and a shorter field dimension, where the ratio is considerably greater than 1. A field facet mirror has a plurality of field facets that set defined illumination conditions in the object field. A following optics downstream of the field facet mirror transmits the illumination light into the object field. The following optics includes a pupil facet mirror with a plurality of pupil facets. The field facets are in each case individually allocated to the pupil facets so that portions of the illumination light bundle impinging upon in each case one of the field facets are guided on to the object field via the associated pupil facet.

Abstract: An illumination optics for microlithography includes an optical assembly for guiding illumination light to an object field to be illuminated in an object plane. The illumination optics can divide an illumination light radiation bundle into a plurality of radiation sub-bundles which are assigned to different illumination angles of the object field illumination. The illumination optics is configured so that at least some of the radiation sub-bundles are superimposed in a superposition plane which is spaced from the object plane and which is not imaged into the object plane in which superposition takes place. This superposition is such that edges of the superimposed radiation sub-bundles coincide at least partially. In some embodiments, a field intensity setting device includes a plurality of adjacent individual diaphragms which at least attenuate illumination light when exposed thereon.

Abstract: In general, in one aspect, the invention features a system that includes an illumination system of a microlithography tool, the illumination system including a first component having a plurality of elements. During operation of the system, the elements direct radiation from a source along an optical path to an arc-shaped object field at an object plane of a projection objective, and at least one of the elements has a curved shape that is different from the arc-shape of the object field.

Abstract: An illumination system is used to illuminate a specified illumination field of an object surface with EUV radiation. The illumination system has an EUV source and a collector to concentrate the EUV radiation in the direction of an optical axis. A first optical element is provided to generate secondary light sources, and a second optical element is provided at the location of these secondary light sources, the second optical element being part of an optical device which includes further optical elements, and which images the first optical element into an image plane into the illumination field. Between the collector and the illumination field, a maximum of five reflecting optical elements are arranged. These optical elements reflect the main beam either grazingly or steeply. The optical axis, projected onto an illumination main plane, is deflected by more than 30° between a source axis portion and a field axis portion.

Abstract: Illumination systems which are designed to illuminate a field in a field plane and simultaneously illuminate a pupil plane with radiation from a light source are disclosed.

Abstract: A projection exposure apparatus for microlithography has an illumination system with an EUV light source and an illumination optical unit to expose an object field in an object plane. A projection optical unit images the object field into an image field in an image plane. A pupil facet mirror in a plane of the illumination optical unit that coincides with a pupil plane of the projection optical unit or that is optically conjugate with respect thereto has a plurality of individual facets on which illumination light can impinge. A correction diaphragm is in or adjacent to a pupil plane of the projection optical unit or in a conjugate plane with respect thereto. The correction diaphragm screens the illumination of the entrance pupil of the projection optical unit so that at least some source images assigned to the individual facets of the pupil facet mirror in the entrance pupil of the projection optical unit are partly shaded by one and the same diaphragm edge.