Abstract: A power semiconductor component that can be controlled by a field effect has a multiplicity of parallel-connected individual components disposed in cells, the cells are disposed tightly packed on a relatively small space in a cell array. Parallel-connected source zones of the cells have shadowed regions that in each case reduce an effective W/L channel ratio in the cells containing the shadowed regions. The invention has the advantage that because of the provision of the shadowed regions inside the source zones that are preferably undoped or at least doped much weaker than the source zones, the critical regions in the cell array with the highest current density are specifically moderated. Thus the current density in the current-carrying filament of the cell is more homogeneously distributed. This measure renders it possible to reduce the cell grid spacing of the cells in the cell array, or to reduce the forward resistance per unit area, and this leads simultaneously to a reduction in the power loss.

Abstract: A semiconductor component having a high-voltage endurance edge structure in which a multiplicity of parallel-connected individual components are disposed in a multiplicity of cells of a cell array. In an edge region, the semiconductor component has cells with shaded source zone regions. During commutation of the power semiconductor component, the shaded source zone regions suppress the switching on of a parasitic bipolar transistor caused by the disproportionately large reverse flow current density. Moreover, an edge structure having shaded source zone regions can be produced very easily in technological terms, in particular in the case of self-adjusting processes, and can thus be produced cost-effectively.

Abstract: An integrated power semiconductor component includes a substrate of a first conduction type. At least one first region of a second conduction type is embedded in the substrate and at least one second region of the second conduction type is embedded in the substrate. A substrate contact supplies a supply voltage. Contact-making semiconductor components are embedded in the first region and in the second region. At least a portion of the semiconductor components in the first region control at least a portion of the semiconductor components in the second region. A third region of the second conduction type is disposed between the first region and the second region, and the first region and the third region are at different potentials.

Abstract: Switch with at least two series-connected MOS-FETs has a drain terminal of a preceding MOS-FET connected to a source terminal of a succeeding MOS-FET the MOS-FETs having respective control terminals connectible to a control voltage. The control terminal of the preceding MOS-FET is directly connected to a terminal of the control voltage source. The control terminal of the succeeding MOS-FET is connected to the control terminal of the respective preceding MOS-FET via a diode poled in forward direction with respect to the control voltage source. A resistor is connected between the control terminal and the source terminal of the succeeding MOS-FET.