Abstract: A method for processing a layer may include: providing a patterned carbon layer over a layer or over a carrier; and carrying out an ion implantation through the patterned carbon layer into the layer or into the carrier.

Abstract: The invention relates to an ESD protection circuit for an integrated circuit including a drain-extended MOS device and an output pad that requires protection. The ESD protection circuit includes a first diode coupled to the output pad and to a bias voltage rail, a second diode coupled to the output pad and to another bias voltage rail, and an ESD power clamp coupled between the two bias voltage rails. The ESD power clamp is formed as a vertical npn transistor with its base and emitter coupled together. The collector of the npn transistor is formed using an n-well implantation and a DEMOS n-drain extension to produce a snapback-based voltage limiting characteristic. The diodes are formed with a lightly p-doped substrate region over a buried n-type layer, and a p-well implant and an n-well implant separated by intervening substrate. A third diode may be coupled between the two bias voltage rails.

Abstract: A cable passage for sealing and for electrically contacting an exhaust-gas sensor includes: a protective sleeve; and at least one connecting cable which is run out of the protective sleeve on at least one front side of the protective sleeve. At least one cross section of the space existing between the protective sleeve and the at least one connecting cable is filled with a thermoplastically workable fluoropolymer-containing material.

Abstract: An encasing film for a galvanic element has at least one force sensor for detecting an expansion state of the encasing film. The encasing film is produced from an elastic and electrically insulating material, e.g., plastic. The force sensor, which has a strain gauge, is situated on a surface of the encasing film.

Abstract: Various embodiments provide a method for processing a carrier, the method including changing the three-dimensional structure of a mask layer arranged over the carrier so that at least two mask layer regions are formed having different mask layer thicknesses; and applying an ion implantation process to the at least two mask layer regions to form at least two implanted regions in the carrier having different implantation depth profiles.

Abstract: The disclosure relates to an energy storing device for generating a supply voltage for an electric machine, comprising at least one energy supply branch which is connected in parallel and each of which has a plurality of first and second energy storing modules that are connected in series. The first and second energy storing modules each comprise an energy storing cell module, which has at least one energy storing cell, and a coupling device, which is designed to selectively connect the energy storing cell module into the respective energy supply branch or to bridge said energy storing cell module. Each second energy storing module additionally has a cooling element for the at least one energy storing cell, and the cooling element is designed to cool the at least one energy storing cell dependent on a control signal of a cooling controller.

Abstract: Disclosed is a ceramic sintered shaped body containing Y2O3-stabilized zirconia with a sintered density of at least 99% of the theoretical sintered density and having a mean grain size of <180 nm. The zirconia fraction of the sintered shaped body comprises tetragonal and cubic phases. Also disclosed is a process for the production of a ceramic sintered shaped body containing Y2O3-stabilized zirconia, which process comprises dispersion of a submicron powder and comminution of the dispersed submicron powder by means of grinding media having a diameter of less than or equal to 100 ?m to a particle size d95 of <0.42 ?m; shaping of the dispersion to form a body, and sintering of the body to form the sintered shaped body.

Abstract: A lithium-ion battery cell includes a housing with an electrode arrangement and a temperature sensor that is arranged in the interior of the housing. The temperature sensor has an electro-thermal oscillator that converts a temperature into a frequency. A motor vehicle includes the lithium-ion battery cell.

Abstract: A stopper is described for sealing a housing of an exhaust gas sensor, in which the stopper has a base body which contains a fluoroelastomer, and in which the stopper has at least one through channel for leading through a connecting cable. A seal is situated, at least in places, between the base body of the stopper and the through channel. The seal contains at least one thermoplastically processable fluoropolymer-containing material having a melting point or melting range between 170° C. and 320° C.

Abstract: A stopper for sealing a housing of an exhaust gas sensor has: a base body which contains polytetrafluoroethylene; at least one through channel for leading through a connecting cable; and a seal situated, at least in places, between the base body of the stopper and the through channel, the seal containing at least one perfluoroalkoxy polymer or one tetrafluoroethylene perfluoroproylene or one polychlorotrifluoroethylene or one polyvinylidene fluoride.

Abstract: A stopper for sealing a housing of an exhaust gas sensor has: at least one axial through-channel for guiding through a connecting cable; a basic body that has a fluoroelastomer; and at least one outer seal situated radially externally on the stopper and having at least one thermoplastically processable fluoropolymer-containing material having a melting point or melting range between 170° C. and 320° C.

Abstract: A plug for sealing a housing of an exhaust gas sensor, the plug having at least one axial through-channel for leading through a connecting cable, the plug having a main body which includes polytetrafluoroethylene, the plug further including at least one outer seal which is situated on the plug radially on the outside, the outer seal including at least one perfluoroalkoxy polymer or tetrafluoroethylene-perfluoropropylene or polychlorotrifluoroethylene or polyvinylidene fluoride.

Abstract: A battery includes at least one battery cell that has a housing with an electrode arrangement arranged therein. A first temperature sensor is arranged outside the battery cell housing, and a second temperature sensor is arranged inside the battery cell housing. The temperature dynamic of the second temperature sensor is higher than the temperature dynamic of the first temperature sensor. A motor vehicle includes the battery cell.

Abstract: A sensor for determining at least one property of a measuring gas in a measuring gas space is provided. The sensor has a housing which includes a housing opening. At least one connection cable is led from the housing through the housing opening. The sensor further includes at least one sealing body, in particular a grommet, the sealing body at least partially enclosing the connection cable. The sealing body has at least one first section and at least one second section, the first section having a higher deformability than the second section.

Abstract: The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. The avalanche ignition region is preferably formed wider than the diode depletion zone, and is preferably created by placement, preferably by ion implantation, of an atomic specie different from that of the principal device structure. The doping concentration of the placed atomic specie should be sufficiently high to ensure substantially immediate onset of avalanche current when the diode breakdown voltage is exceeded. The new atomic specie preferably comprises argon or nitrogen, but other atomic species can be employed. However, other means of increasing a defect concentration level in the diode depletion zone, such as an altered annealing program, are also contemplated.

Abstract: Various embodiments provide a method for processing a carrier, the method including changing the three-dimensional structure of a mask layer arranged over the carrier so that at least two mask layer regions are formed having different mask layer thicknesses; and applying an ion implantation process to the at least two mask layer regions to form at least two implanted regions in the carrier having different implantation depth profiles.

Abstract: The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. The avalanche ignition region is preferably formed wider than the diode depletion zone, and is preferably created by placement, preferably by ion implantation, of an atomic specie different from that of the principal device structure. The doping concentration of the placed atomic specie should be sufficiently high to ensure substantially immediate onset of avalanche current when the diode breakdown voltage is exceeded. The new atomic specie preferably comprises argon or nitrogen, but other atomic species can be employed. However, other means of increasing a defect concentration level in the diode depletion zone, such as an altered annealing program, are also contemplated.

Abstract: Embodiments of the invention describe a method for exposing an area on a substrate to a beam. The method includes adjusting a focus offset of the beam with respect to the area on the substrate, tilting the beam or tilting the substrate, and exposing the area on the substrate with the beam, thereby generating locations within the area exposed with different foci. Furthermore embodiments describe computer programs for controlling a photolithographic system to do the same and a photolithographic system for doing the same.

Abstract: A method for operating at least one sensor element for detecting at least one property of a gas in a measured-gas space is described. The method comprises at least the following steps: at least one first step, in the first step at least one parameter being ascertained; at least one second step, in the second step the parameter being compared with at least one comparison value, in accordance with that comparison at least one feature being allocated to the sensor element or to at least one part of the sensor element. An apparatus for carrying out the method is also described.

Abstract: Embodiments of the invention describe a method for exposing an area on a substrate to a beam. The method includes adjusting a focus offset of the beam with respect to the area on the substrate, tilting the beam or tilting the substrate, and exposing the area on the substrate with the beam, thereby generating locations within the area exposed with different foci. Furthermore embodiments describe computer programs for controlling a photolithographic system to do the same and a photolithographic system for doing the same.