Abstract: A measurement mark (3) for determining the relative positional accuracy of a progressive projection onto a wafer (5), the projection being performed with two masks (3, 4), comprising two structure elements (10, 20) formed on a respective one of the masks (1, 2). The structure elements (10, 20) overlap with regard to their position on the masks so that, during the projection of the second structure element (20), an electrically conductive structure (30) formed on the basis of the first structure element on the wafer (5) is overformed by removal of a portion (31). In an electrical line width measurement, the reduced width (CD, CD30a) of the structure (30) is measured and compared either with the original width (62) or with that width (CD30b) of a further partial element (30b) produced by the overforming.

Abstract: The mutually associated structure patterns, which are provided on one mask, or a plurality of masks for a double or multiple exposure can be received by the mask substrate holder. The mask substrate holder has two receiving stations one for each of the masks. Alternatively, both structure patterns for the double exposure are formed on one mask. The substrate holder has one receiving station. The substrate holder, is displaced from the section including first structure pattern to the second, between the two exposure operations, without the masks having to be loaded or unloaded, and realigned.

Abstract: A description is given of a method for orienting a semiconductor wafer (W) during semiconductor fabrication with the aid of an optical alignment system (10), the semiconductor wafer (W) having an alignment mark (M) with regular structures (M1, M2, M3), on the basis of which the position of the semiconductor wafer (W) can be determined, having the following method steps:

Abstract: Exposure positions of exposure fields of semiconductor wafers are subsequently corrected individually in order to compensate for processes affecting the locational position of alignment marks and/or oblique measurement structures. Measurement structures are formed preferably in the frame region of product wafers comprising electrical circuits to be formed and their locational positions before and after the effect of the process that has an effect are compared individually for purpose of determining the positional displacement for each relevant exposure field. From this there is determined either directly a “shot”-fine correction value for the individual exposure or at least one nonlinear function for the correction in dependence on the position of the measurement structures on the wafer. The corrections are applied to the exposure fields after alignment to the alignment marks overformed by the process in dependence on their position on the wafer.

Abstract: A method for exposing a semiconductor wafer in an exposer includes applying a first resist layer on a layer covering an alignment mark. A microscope measuring instrument, which has a visible and an ultraviolet light source, uses the visible light source for aligning the wafer and uses the ultraviolet light source for exposing a region in the first resist layer above the alignment mark without using a mask to free expose the alignment marks. The semiconductor wafer is then developed, the alignment mark is etched free and covered again with a second resist, which is exposed in an exposer in order to transfer a mask structure following an alignment with the alignment mark. The capacity of expensive exposers is thus advantageously increased, and microscope measuring instruments can be used multifunctionally, for example for the free exposure and for the detection of defects.