Patents by Inventor Jens Stacker
Jens Stacker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10884345Abstract: A first substrate 2002 has a calibration pattern applied to a first plurality of fields 2004 by a lithographic apparatus. Further substrates 2006, 2010 have calibration patterns applied to further pluralities of fields 2008, 2012. The different pluralities of fields have different sizes and/or shapes and/or positions. Calibration measurements are performed on the patterned substrates 2002, 2006, 2010 and used to obtain corrections for use in controlling the apparatus when applying product patterns to subsequent substrates. Measurement data representing the performance of the apparatus on fields of two or more different dimensions (fields 2004, 2008, 2012 in this example) is gathered together in a database 2013 and used to synthesize the information needed to calibrate the apparatus for a new size. Calibration data is also obtained for different scan and step directions.Type: GrantFiled: March 18, 2020Date of Patent: January 5, 2021Assignee: ASML Netherlands B.V.Inventors: Emil Peter Schmitt-Weaver, Jens Stäcker, Koenraad Remi André Maria Schreel, Roy Werkman
-
Publication number: 20200218170Abstract: A first substrate 2002 has a calibration pattern applied to a first plurality of fields 2004 by a lithographic apparatus. Further substrates 2006, 2010 have calibration patterns applied to further pluralities of fields 2008, 2012. The different pluralities of fields have different sizes and/or shapes and/or positions. Calibration measurements are performed on the patterned substrates 2002, 2006, 2010 and used to obtain corrections for use in controlling the apparatus when applying product patterns to subsequent substrates. Measurement data representing the performance of the apparatus on fields of two or more different dimensions (fields 2004, 2008, 2012 in this example) is gathered together in a database 2013 and used to synthesize the information needed to calibrate the apparatus for a new size. Calibration data is also obtained for different scan and step directions.Type: ApplicationFiled: March 18, 2020Publication date: July 9, 2020Applicant: ASML Netherlands B.V.Inventors: Emil Peter SCHMITT-WEAVER, Jens STÄCKER, Koenraad Remi André Maria SCHREEL, Roy WERKMAN
-
Patent number: 10627729Abstract: A first substrate (2002) has a calibration pattern applied to a first plurality of fields (2004) by a lithographic apparatus. Further substrates (2006, 2010) have calibration patterns applied to further pluralities of fields (2008, 2012). The different pluralities of fields have different sizes and/or shapes and/or positions. Calibration measurements are performed on the patterned substrates (2002, 2006, 2010) and used to obtain corrections for use in controlling the apparatus when applying product patterns to subsequent substrates. Measurement data representing the performance of the apparatus on fields of two or more different dimensions (2004, 2008, 2012) is gathered together in a database (2013) and used to synthesize the information needed to calibrate the apparatus for a new size. Calibration data is also obtained for different scan and step directions.Type: GrantFiled: May 27, 2016Date of Patent: April 21, 2020Assignee: ASML Netherlands B.V.Inventors: Emil Peter Schmitt-Weaver, Jens Stäcker, Koenraad Remi André Maria Schreel, Roy Werkman
-
Publication number: 20180173118Abstract: A first substrate (2002) has a calibration pattern applied to a first plurality of fields (2004) by a lithographic apparatus. Further substrates (2006, 2010) have calibration patterns applied to further pluralities of fields (2008, 2012). The different pluralities of fields have different sizes and/or shapes and/or positions. Calibration measurements are performed on the patterned substrates (2002, 2006, 2010) and used to obtain corrections for use in controlling the apparatus when applying product patterns to subsequent substrates. Measurement data representing the performance of the apparatus on fields of two or more different dimensions (2004, 2008, 2012) is gathered together in a database (2013) and used to synthesize the information needed to calibrate the apparatus for a new size. Calibration data is also obtained for different scan and step directions.Type: ApplicationFiled: May 27, 2016Publication date: June 21, 2018Applicant: ASML Netherlands B.V.Inventors: Emil Peter SCHMITT-WEAVER, Jens STÄCKER, Koenraad Remi André Maria SCHREEL, Roy WERKMAN
-
Patent number: 7310129Abstract: The mutually associated structure patterns, which are provided on one mask, or a plurality of masks for a double or multiple exposure can be received by the mask substrate holder. The mask substrate holder has two receiving stations one for each of the masks. Alternatively, both structure patterns for the double exposure are formed on one mask. The substrate holder has one receiving station. The substrate holder, is displaced from the section including first structure pattern to the second, between the two exposure operations, without the masks having to be loaded or unloaded, and realigned.Type: GrantFiled: September 24, 2004Date of Patent: December 18, 2007Assignee: Infineon Technologies, AGInventors: Jens Stäcker, Heiko Hommen, Jens Uwe Bruch, Marlene Strobl, Karl Schumacher
-
Patent number: 7268877Abstract: Described are systems and methods for orienting a semiconductor wafer during semiconductor fabrication with the aid of an optical alignment system, the semiconductor wafer having an alignment mark with regular structures, on the basis of which the position of the semiconductor wafer can be determined.Type: GrantFiled: April 2, 2004Date of Patent: September 11, 2007Assignee: Infineon Technologies AGInventor: Jens Stäcker
-
Patent number: 7186484Abstract: A measurement mark (3) for determining the relative positional accuracy of a progressive projection onto a wafer (5), the projection being performed with two masks (3, 4), comprising two structure elements (10, 20) formed on a respective one of the masks (1, 2). The structure elements (10, 20) overlap with regard to their position on the masks so that, during the projection of the second structure element (20), an electrically conductive structure (30) formed on the basis of the first structure element on the wafer (5) is overformed by removal of a portion (31). In an electrical line width measurement, the reduced width (CD, CD30a) of the structure (30) is measured and compared either with the original width (62) or with that width (CD30b) of a further partial element (30b) produced by the overforming.Type: GrantFiled: September 24, 2004Date of Patent: March 6, 2007Assignee: Infineon Technologies AGInventors: Heiko Hommen, Jens Stäcker, Maria de la Piedad Fernandez-Martinez, Jens Uwe Bruch, Thorsten Schedel
-
Publication number: 20050260510Abstract: A measurement mark (3) for determining the relative positional accuracy of a progressive projection onto a wafer (5), the projection being performed with two masks (3, 4), comprising two structure elements (10, 20) formed on a respective one of the masks (1, 2). The structure elements (10, 20) overlap with regard to their position on the masks so that, during the projection of the second structure element (20), an electrically conductive structure (30) formed on the basis of the first structure element on the wafer (5) is overformed by removal of a portion (31). In an electrical line width measurement, the reduced width (CD, CD30a) of the structure (30) is measured and compared either with the original width (62) or with that width (CD30b) of a further partial element (30b) produced by the overforming.Type: ApplicationFiled: September 24, 2004Publication date: November 24, 2005Inventors: Heiko Hommen, Jens Stacker, Maria de la Piedad Fernandez-Martinez, Jens Bruch, Thorsten Schedel
-
Patent number: 6896999Abstract: A method for exposing a semiconductor wafer in an exposer includes applying a first resist layer on a layer covering an alignment mark. A microscope measuring instrument, which has a visible and an ultraviolet light source, uses the visible light source for aligning the wafer and uses the ultraviolet light source for exposing a region in the first resist layer above the alignment mark without using a mask to free expose the alignment marks. The semiconductor wafer is then developed, the alignment mark is etched free and covered again with a second resist, which is exposed in an exposer in order to transfer a mask structure following an alignment with the alignment mark. The capacity of expensive exposers is thus advantageously increased, and microscope measuring instruments can be used multifunctionally, for example for the free exposure and for the detection of defects.Type: GrantFiled: June 19, 2003Date of Patent: May 24, 2005Assignee: Infineon Technologies AGInventors: Jens Stäcker, Heiko Hommen
-
Publication number: 20050105073Abstract: The mutually associated structure patterns, which are provided on one mask, or a plurality of masks for a double or multiple exposure can be received by the mask substrate holder. The mask substrate holder has two receiving stations one for each of the masks. Alternatively, both structure patterns for the double exposure are formed on one mask. The substrate holder has one receiving station. The substrate holder, is displaced from the section including first structure pattern to the second, between the two exposure operations, without the masks having to be loaded or unloaded, and realigned.Type: ApplicationFiled: September 24, 2004Publication date: May 19, 2005Inventors: Jens Stacker, Heiko Hommen, Jens Bruch, Marlene Strobl, Karl Schumacher
-
Patent number: 6861331Abstract: Exposure positions of exposure fields of semiconductor wafers are subsequently corrected individually in order to compensate for processes affecting the locational position of alignment marks and/or oblique measurement structures. Measurement structures are formed preferably in the frame region of product wafers comprising electrical circuits to be formed and their locational positions before and after the effect of the process that has an effect are compared individually for purpose of determining the positional displacement for each relevant exposure field. From this there is determined either directly a “shot”-fine correction value for the individual exposure or at least one nonlinear function for the correction in dependence on the position of the measurement structures on the wafer. The corrections are applied to the exposure fields after alignment to the alignment marks overformed by the process in dependence on their position on the wafer.Type: GrantFiled: October 16, 2003Date of Patent: March 1, 2005Assignee: Infineon Technologies AGInventors: Martin Rössiger, Thorsten Schedel, Jens Stäcker
-
Publication number: 20040257572Abstract: A description is given of a method for orienting a semiconductor wafer (W) during semiconductor fabrication with the aid of an optical alignment system (10), the semiconductor wafer (W) having an alignment mark (M) with regular structures (M1, M2, M3), on the basis of which the position of the semiconductor wafer (W) can be determined, having the following method steps:Type: ApplicationFiled: April 2, 2004Publication date: December 23, 2004Applicant: Infineon Technologies AGInventor: Jens Stacker
-
Publication number: 20040082085Abstract: Exposure positions of exposure fields of semiconductor wafers are subsequently corrected individually in order to compensate for processes affecting the locational position of alignment marks and/or oblique measurement structures. Measurement structures are formed preferably in the frame region of product wafers comprising electrical circuits to be formed and their locational positions before and after the effect of the process that has an effect are compared individually for purpose of determining the positional displacement for each relevant exposure field. From this there is determined either directly a “shot”-fine correction value for the individual exposure or at least one nonlinear function for the correction in dependence on the position of the measurement structures on the wafer. The corrections are applied to the exposure fields after alignment to the alignment marks overformed by the process in dependence on their position on the wafer.Type: ApplicationFiled: October 16, 2003Publication date: April 29, 2004Inventors: Martin Rossiger, Thorsten Schedel, Jens Stacker
-
Publication number: 20040023138Abstract: A method for exposing a semiconductor wafer in an exposer includes applying a first resist layer on a layer covering an alignment mark. A microscope measuring instrument, which has a visible and an ultraviolet light source, uses the visible light source for aligning the wafer and uses the ultraviolet light source for exposing a region in the first resist layer above the alignment mark without using a mask to free expose the alignment marks. The semiconductor wafer is then developed, the alignment mark is etched free and covered again with a second resist, which is exposed in an exposer in order to transfer a mask structure following an alignment with the alignment mark. The capacity of expensive exposers is thus advantageously increased, and microscope measuring instruments can be used multifunctionally, for example for the free exposure and for the detection of defects.Type: ApplicationFiled: June 19, 2003Publication date: February 5, 2004Inventors: Jens Stacker, Heiko Hommen