Abstract: The present invention provides a processing method that changes the given and unfavorable surface contour of a material layer to a predetermined, more favorable surface contour at least along a selected radial direction of the workpiece. Due to the fact that the etch process included into the processing method affects the whole workpiece simultaneously, a high throughput is achievable and the etching method is easily applied in an industrial setting, for example for the mass production of semiconductor products.

Abstract: The present invention provides a processing method that changes the given and unfavorable surface contour of a material layer to a predetermined, more favorable surface contour at least along a selected radial direction of the workpiece. Due to the fact that the etch process included into the processing method affects the whole workpiece simultaneously, a high throughput is achievable and the etching method is easily applied in an industrial setting, for example for the mass production of semiconductor products.

Abstract: A substrate processing apparatus comprises a process chamber capable of processing a first material on the substrate. A radiation source is capable of emitting radiation that is reflected from the substrate during processing. A radiation detector is provided to detect the reflected radiation and generate a signal trace. A controller is adapted to receive the signal trace and evaluate an endpoint of processing the first material from a change in the signal trace that is distinctive of an exposure of a second material having a different reflectivity coefficient than the first material.