Abstract: A chromatic aberration corrector and method of controlling this chromatic aberration corrector is offered. The corrector has first and second multipole lenses for producing quadrupole fields and first and second transfer lenses each having a focal length of f. The first and second multipole lenses are arranged on opposite sides of the first and second transfer lenses. The distance between the first multipole lens and the first transfer lens is f. The distance between the first transfer lens and the second transfer lens is 2f. The distance between the second transfer lens and the second multipole lens is f??. The corrector is so designed that the relationship, f>?>0, holds.

Abstract: A transmission electron microscope (100) includes an electron beam source (2), an illumination lens (10), an objective lens (20), an intermediate lens system (30), a pair of transfer lenses (40) located behind the intermediate lens system (30), and an energy filter (60) for separating the electrons of the beam L transmitted through the specimen (S) according to energy. The transfer lenses (40) transfer the first image to the entrance crossover plane (S1) of the energy filter (60) and to transfer the second image to the entrance image plane (A1) of the filter (60). An image plane (A3) is formed between the first transfer lens (40a) and the second transfer lens (40b).

Abstract: An ion beam processing system (100) processes the sample (S) mounted on a sample stage (30) by irradiating the sample with an ion beam in a sample chamber (2). The system has a sample container (20) including a cover portion (26) formed to be detachably mountable to a base portion (24), the sample stage (30) on which the container (20) is detachably mountable, and cover mounting/dismounting apparatus (40) for mounting and dismounting the cover portion (26) from outside the sample chamber (2).

Abstract: In the field of semiconductor production using shaped beam charged particle beam lithography, a pattern is formed on a surface by dragging a charged particle beam across the surface in a single extended shot to form a track. In some embodiments, the track may form a straight path, a curved path, or a perimeter of a curvilinear shape. In other embodiments, the width of the track may be altered by varying the velocity of the dragged beam. The techniques may be used for manufacturing an integrated circuit by dragging a charged particle beam across a resist-coated wafer to transfer a pattern to the wafer, or by dragging a charged particle beam across a reticle, where the reticle is used to manufacture a photomask which is then used to transfer a pattern to a wafer using an optical lithographic process.