Abstract: The present disclosure provides an Anderon meter for cryogenic environment including a housing; a control arm installed on an inner circumference of the housing rotatably relative to the housing, and including a pressing portion; and a clamp including a contact portion on a side and an assembly portion on an opposite side, wherein the contact portion is in contact with the pressing portion so that the contact portion is pressed by the pressing portion, and the assembly portion is coupled to an inner circumference of the bearing by interference fit, wherein the pressing portion presses the contact portion by the control of an amount of relative rotation of the control arm and the assembly portion is coupled to the inner circumference of the bearing by interference fit to determine friction characteristics between the inner race of the bearing and the assembly portion.

Abstract: Disclosed is a ball bearing including an inner ring and an outer ring spaced apart from each other, each being rotatable, a cage part including a first cage and a second cage rotatably installed between the inner ring and the outer ring, and having ball receiving part formed along circumferential direction, ball installed in the ball receiving part, and rotating with the cage part as at least one of the inner ring and the outer ring rotates, and magnet which provides a magnetic force to the ball, wherein the first cage has a first seating part which is formed between the ball receiving parts, and on which one side of the magnet is placed, and the second cage has a second seating part which is connected to the first seating part, and on which the other side of the magnet is placed.

Abstract: A bearing test apparatus for testing a test bearing, including a chamber, a bearing cap disposed in the chamber and coupled to an outer wheel of the test bearing, a driving shaft connected to an inner wheel of the test bearing to rotate the inner wheel, an extension arm extending in a radial direction of the bearing cap from the bearing cap to expose one end thereof out of the chamber, and a measurement arm configured to make a contact with one end of the extension arm and configured to be rotatable by the extension arm. When a rotation force is applied to the bearing cap by the outer wheel, the extension arm is used to measure a force applied to the measurement arm, which is used to obtain an exclusive torque of the test bearing.

Abstract: Disclosed is a ball bearing including an inner ring and an outer ring spaced apart from each other, each being rotatable, a cage part including a first cage and a second cage rotatably installed between the inner ring and the outer ring, and having ball receiving part formed along circumferential direction, ball installed in the ball receiving part, and rotating with the cage part as at least one of the inner ring and the outer ring rotates, and magnet which provides a magnetic force to the ball, wherein the first cage has a first seating part which is formed between the ball receiving parts, and on which one side of the magnet is placed, and the second cage has a second seating part which is connected to the first seating part, and on which the other side of the magnet is placed.

Abstract: A bearing test apparatus for testing a bearing (hereinafter, referred to as a “test bearing”) has a chamber, a bearing cap disposed in the chamber and coupled to an outer wheel of the test bearing, a driving shaft connected to an inner wheel of the test bearing to rotate the inner wheel, an extension arm extending in a radial direction of the bearing cap from the bearing cap to expose one end thereof out of the chamber, and a measurement arm configured to make a contact with one end of the extension arm and configured to be rotatable by the extension arm, wherein an exclusive torque of the test bearing is obtained by measuring a force applied to the measurement arm by the extension arm when a rotation force is applied to the bearing cap by the outer wheel.

Abstract: The present invention relates to a fibrous transistor, and a method of manufacturing the same, and more particularly, to a fibrous transistor, in which a source fiber and a drain fiber are formed in a twisted state in a longitudinal direction, so that a contact surface of the source fiber and the drain fiber is increased, thereby enabling charges to easily move, and a method of manufacturing the same. Further, the present invention relates to a fibrous transistor, in which a gate insulating layer is formed by using ion gel, so that the fibrous transistor may obtain a high current at the same operation voltage, thereby having a low operation voltage, and a method of manufacturing the same.

Abstract: An oil sealing device for preventing a leakage of an oil of a bearing which supports a rotary shaft of a rotating machine has a brush member having a plurality of bristles in contact with the rotary shaft, and an actuator configured to move the brush member in a length direction of the rotary shaft, wherein a sloped surface having different heights along a length direction of the rotary shaft is formed at the rotary shaft, and wherein when the bristles are worn, the actuator moves the brush member in a length direction of the rotary shaft so that the bristles comes into contact with the sloped surface.

Abstract: An oil sealing device for preventing a leakage of an oil of a bearing which supports a rotary shaft of a rotating machine has a brush member having a plurality of bristles in contact with the rotary shaft, and an actuator configured to move the brush member in a length direction of the rotary shaft, wherein a sloped surface having different heights along a length direction of the rotary shaft is formed at the rotary shaft, and wherein when the bristles are worn, the actuator moves the brush member in a length direction of the rotary shaft so that the bristles comes into contact with the sloped surface.

Abstract: A bearing test apparatus has a bearing cap coupled to an outer ring of a bearing to be tested (a “test bearing”), a driving rotary shaft coupled to an inner ring of the test bearing to rotate the inner ring, and a bearing torque meter for measuring a single torque of the test bearing, wherein an extension bar is formed at the bearing cap to protrude thereon, wherein the bearing torque meter includes a measurement rod configured to contact the extension bar and be fixed to support the extension bar in a direction opposite to a rotating direction of the driving rotary shaft, and a power sensor for measuring a force applied to the measurement rod, wherein the single torque of the test bearing is calculated based on a distance from the driving rotary shaft to the measurement rod and a force applied to the measurement rod.

Abstract: A bearing test apparatus has a bearing cap coupled to an outer ring of a bearing to be tested (a “test bearing”), a driving rotary shaft coupled to an inner ring of the test bearing to rotate the inner ring, and a bearing torque meter for measuring a single torque of the test bearing, wherein an extension bar is formed at the bearing cap to protrude thereon, wherein the bearing torque meter includes a measurement rod configured to contact the extension bar and be fixed to support the extension bar in a direction opposite to a rotating direction of the driving rotary shaft, and a power sensor for measuring a force applied to the measurement rod, wherein the single torque of the test bearing is calculated based on a distance from the driving rotary shaft to the measurement rod and a force applied to the measurement rod.

Abstract: A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: Sn1-xMxO2??[Chemical Formula 1] wherein, in the chemical formula 1, the M is tri-valent metal and the X is a real number of 0.01˜0.05. The p-type transparent oxide semiconductor is applicable to active semiconductor devices such as TFT-LCD and transparent solar cell, due to excellent electrical and optical properties and shows superior properties in aspects of visible light transmittance (T), carrier mobility (?) and rectification ratio as well as transparency.

Abstract: A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: Sn1-xMxO2??[Chemical Formula 1] wherein, in the chemical formula 1, the M is tri-valent metal and the X is a real number of 0.01˜0.05. The p-type transparent oxide semiconductor is applicable to active semiconductor devices such as TFT-LCD and transparent solar cell, due to excellent electrical and optical properties and shows superior properties in aspects of visible light transmittance (T), carrier mobility (?) and rectification ratio as well as transparency.

Abstract: A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: Sn1-xMxO2??[Chemical Formula 1] wherein, in the chemical formula 1, the M is tri-valent metal and the X is a real number of 0.01˜0.05. The p-type transparent oxide semiconductor is applicable to active semiconductor devices such as TFT-LCD and transparent solar cell, due to excellent electrical and optical properties and shows superior properties in aspects of visible light transmittance (T), carrier mobility (?) and rectification ratio as well as transparency.

Abstract: There is provided a fabrication method for an AA stacked graphene-diamond hybrid material by converting, through a high temperature treatment on diamond, a diamond surface into graphene. According to the present invention, if various types of diamond are maintained at a certain temperature having a stable graphene phase (approximately greater than 1200° C.) in a hydrogen gas atmosphere, two diamond {111} lattice planes are converted into one graphene plate (2:1 conversion), whereby the diamond surface is converted into graphene in a certain thickness, thus to fabricate the AA stacked graphene-diamond hybrid material.

Abstract: There is provided a fabrication method for an AA stacked graphene-diamond hybrid material by converting, through a high temperature treatment on diamond, a diamond surface into graphene. According to the present invention, if various types of diamond are maintained at a certain temperature having a stable graphene phase (approximately greater than 1200° C.) in a hydrogen gas atmosphere, two diamond {111} lattice planes are converted into one graphene plate (2:1 conversion), whereby the diamond surface is converted into graphene in a certain thickness, thus to fabricate the AA stacked graphene-diamond hybrid material.

Abstract: Disclosed herein are a graphene hybrid material and a method for preparing the graphene hybrid material, the graphene hybrid material comprising: a matrix having lattice planes disconnected on a surface thereof; and layers of graphene which are epitaxially grown along the lattice planes disconnected on the surface of the matrix such that the layers of graphene are oriented perpendicularly to the matrix, and which are spaced apart from each other and layered on the matrix in the same shape. The graphene hybrid material can be usefully used in the fields of next-generation semiconductor devices, biosensors, electrochemical electrodes and the like.

Abstract: There is provided a fabrication method for an AA stacked graphene-diamond hybrid material by converting, through a high temperature treatment on diamond, a diamond surface into graphene. According to the present invention, if various types of diamond are maintained at a certain temperature having a stable graphene phase (approximately greater than 1200° C.) in a hydrogen gas atmosphere, two diamond {111} lattice planes are converted into one graphene plate (2:1 conversion), whereby the diamond surface is converted into graphene in a certain thickness, thus to fabricate the AA stacked graphene-diamond hybrid material.

Abstract: There is provided a coating material having heat and abrasion resistance and low friction characteristics, as well as a method of utilizing the same. The coating material comprises 20 to 40 wt % Cr2O3, 40 to 60 wt % binder, 10 to 20 wt % WS2, and 10 to 20 wt % Ag. The binder comprises 60 to 80 wt % Ni and 20 to 40 wt % Cr. The binder may further comprise above 0 to 10 wt % Al. The coating method comprises the steps of pulverizing the coating material, pulverizing a binder, applying the pulverized binder to a surface of a workpiece to form a first layer, applying the pulverized coating material to the first layer to form a second layer, and grinding and polishing the surface of the second layer.

Abstract: Disclosed herein are a graphene hybrid material and a method for preparing the graphene hybrid material, the graphene hybrid material comprising: a matrix having lattice planes disconnected on a surface thereof; and layers of graphene which are epitaxially grown along the lattice planes disconnected on the surface of the matrix such that the layers of graphene are oriented perpendicularly to the matrix, and which are spaced apart from each other and layered on the matrix in the same shape. The graphene hybrid material can be usefully used in the fields of next-generation semiconductor devices, biosensors, electrochemical electrodes and the like.

Abstract: There is provided a coating material having heat and abrasion resistance and low friction characteristics, as well as a method of utilizing the same. The coating material comprises 20 to 40 wt % Cr2O3, 40 to 60 wt % binder, 10 to 20 wt % WS2, and 10 to 20 wt % Ag. The binder comprises 60 to 80 wt % Ni and 20 to 40 wt % Cr. The binder may further comprise above 0 to 10 wt % Al. The coating method comprises the steps of pulverizing the coating material, pulverizing a binder, applying the pulverized binder to a surface of a workpiece to form a first layer, applying the pulverized coating material to the first layer to form a second layer, and grinding and polishing the surface of the second layer.