Abstract: A photovoltaic device and a method of manufacturing the same, the device including a semiconductor substrate having a first surface and a second surface opposite to the first surface; a silicon nitride gap insulation layer on the first surface of the semiconductor substrate, a portion of the gap insulation layer proximate to the semiconductor substrate having a silicon:nitrogen ratio different from a silicon:nitrogen ratio in a portion of the gap insulation layer distal to the semiconductor substrate; a semiconductor structure on the first surface of the semiconductor substrate; and an electrode on the semiconductor structure.