Abstract: The present disclosure relates to a microorganism of the genus Corynebacterium having an increased L-amino acid producing ability, containing NADP-dependent glyceraldehyde-3-phosphate dehydrogenase derived from the genus Lactobacillus. According to the present disclosure, the NADP-dependent glyceraldehyde-3-phosphate dehydrogenase derived from Lactobacillus delbrueckii subsp. bulgaricus is introduced to increase the reducing power through the activity of NADP-dependent glyceraldehyde-3-phosphate dehydrogenase, thereby increasing the L-amino acid producing ability of the strains belonging to the genus Corynebacterium.

Abstract: The present disclosure relates to a microorganism of the genus Corynebacterium producing L-amino acid, a method for producing L-amino acid using the same, use of L-amino acid production, and a composition for producing L-amino acid.

Abstract: Provided are a microorganism comprising variant LysE, and an L-amino acid producing method using same. The variant LysE may improve L-amino acid excretion and/or production capacity compared to a wild type.

Abstract: The present disclosure relates to a microorganism of the genus Corynebacterium having an increased L-amino acid producing ability, containing NADP-dependent glyceraldehyde-3-phosphate dehydrogenase derived from the genus Lactobacillus. According to the present disclosure, the NADP-dependent glyceraldehyde-3-phosphate dehydrogenase derived from Lactobacillus delbrueckii subsp. bulgaricus is introduced to increase the reducing power through the activity of NADP-dependent glyceraldehyde-3-phosphate dehydrogenase, thereby increasing the L-amino acid producing ability of the strains belonging to the genus Corynebacterium.

Abstract: Provided are a microorganism for producing L-amino acid, having increased cytochrome C activity, and an L-amino acid production method using the microorganism.

Abstract: The present disclosure relates to a microorganism for producing an L-amino acid with enhanced activity of ?-glucosidase and a method for producing an L-amino acid using the same. According to the present disclosure, the microorganism of the genus Corynebacterium producing an L-amino acid has enhanced activity of ?-glucosidase, thereby improving L-amino acid production yield. Therefore, the microorganism may be very usefully used for L-amino acid production.

Abstract: A microorganism of the genus Corynebacterium producing L-amino acids, and a method of producing L-amino acids using the same.

Abstract: The present disclosure relates to a microorganism for producing an L-amino acid with enhanced activity of ?-glucosidase and a method for producing an L-amino acid using the same. According to the present disclosure, the microorganism of the genus Corynebacterium producing an L-amino acid has enhanced activity of ?-glucosidase, thereby improving L-amino acid production yield. Therefore, the microorganism may be very usefully used for L-amino acid production.

Abstract: The present invention relates to an L-lysine-producing microorganism of the genus Corynebacterium and a method for producing L-lysine using the same.

Abstract: A microorganism of the genus Corynebacterium producing L-amino acids, and a method of producing L-amino acids using the same.

Abstract: The present disclosure relates to a microorganism producing L-lysine, and a method for producing L-lysine using the same.

Abstract: The present disclosure relates to a microorganism producing L-lysine, and a method for producing L-lysine using the same.

Abstract: The present invention relates to an L-lysine-producing microorganism of the genus Corynebacterium and a method for producing L-lysine using the same.

Abstract: A method for fabricating a nonvolatile charge trap memory device and the device are described. In one embodiment, the method includes providing a substrate in an oxidation chamber, wherein the substrate comprises a first exposed crystal plane and a second exposed crystal plane, and wherein the crystal orientation of the first exposed crystal plane is different from the crystal orientation of the second exposed crystal plane. The substrate is then subjected to a radical oxidation process to form a first portion of a dielectric layer on the first exposed crystal plane and a second portion of the dielectric layer on the second exposed crystal plane, wherein the thickness of the first portion of the dielectric layer is approximately equal to the thickness of the second portion of the dielectric layer.

Abstract: A method for fabricating a nonvolatile charge trap memory device is described. The method includes subjecting a substrate to a first oxidation process to form a tunnel oxide layer overlying a polysilicon channel, and forming over the tunnel oxide layer a multi-layer charge storing layer comprising an oxygen-rich, first layer comprising a nitride, and an oxygen-lean, second layer comprising a nitride on the first layer. The substrate is then subjected to a second oxidation process to consume a portion of the second layer and form a high-temperature-oxide (HTO) layer overlying the multi-layer charge storing layer. The stoichiometric composition of the first layer results in it being substantially trap free, and the stoichiometric composition of the second layer results in it being trap dense. The second oxidation process can comprise a plasma oxidation process or a radical oxidation process using In-Situ Steam Generation.

Abstract: A semiconductor device and method of fabricating the same are provided. In one embodiment, the semiconductor device includes a memory transistor with an oxide-nitride-nitride-oxide (ONNO) stack disposed above a channel region. The ONNO stack comprises a tunnel dielectric layer disposed above the channel region, a multi-layer charge-trapping region disposed above the tunnel dielectric layer, and a blocking dielectric layer disposed above the multi-layer charge-trapping region. The multi-layer charge-trapping region includes a substantially trap-free layer comprising an oxygen-rich nitride and a trap-dense layer disposed above the trap-free layer. The semiconductor device further includes a strain inducing structure including a strain inducing layer disposed proximal to the ONNO stack to increase charge retention of the multi-layer charge-trapping region. Other embodiments are also disclosed.

Abstract: A method for fabricating a nonvolatile charge trap memory device is described. The method includes subjecting a substrate to a first oxidation process to form a tunnel oxide layer overlying a polysilicon channel, and forming over the tunnel oxide layer a multi-layer charge storing layer comprising an oxygen-rich, first layer comprising a nitride, and an oxygen-lean, second layer comprising a nitride on the first layer. The substrate is then subjected to a second oxidation process to consume a portion of the second layer and form a high-temperature-oxide (HTO) layer overlying the multi-layer charge storing layer. The stoichiometric composition of the first layer results in it being substantially trap free, and the stoichiometric composition of the second layer results in it being trap dense. The second oxidation process can comprise a plasma oxidation process or a radical oxidation process using In-Situ Steam Generation.

Abstract: A method for fabricating a nonvolatile charge trap memory device is described. The method includes providing a substrate having a charge-trapping layer disposed thereon. A portion of the charge-trapping layer is then oxidized to form a blocking dielectric layer above the charge-trapping layer by exposing the charge-trapping layer to a radical oxidation process.

Abstract: A blocking layer of a non-volatile charge trap memory device is formed by oxidizing a portion of a charge trapping layer of the memory device. In one embodiment, the blocking layer is grown by a radical oxidation process at temperature below 500° C. In accordance with one implementation, the radical oxidation process involves flowing hydrogen (H2) and oxygen (O2) gas mixture into a process chamber and exposing the substrate to a plasma. In a preferred embodiment, a high density plasma (HDP) chamber is employed to oxidize a portion of the charge trapping layer. In further embodiments, a portion of a silicon-rich silicon oxynitride charge trapping layer is consumptively oxidized to form the blocking layer and provide an increased memory window relative to oxidation of a nitrogen-rich silicon oxynitride layer.

Abstract: A blocking layer of a non-volatile charge trap memory device is formed by oxidizing a portion of a charge trapping layer of the memory device. In one embodiment, the blocking layer is grown by a radical oxidation process at temperature below 500° C. In accordance with one implementation, the radical oxidation process involves flowing hydrogen (H2) and oxygen (O2) gas mixture into a process chamber and exposing the substrate to a plasma. In a preferred embodiment, a high density plasma (HDP) chamber is employed to oxidize a portion of the charge trapping layer. In further embodiments, a portion of a silicon-rich silicon oxynitride charge trapping layer is consumptively oxidized to form the blocking layer and provide an increased memory window relative to oxidation of a nitrogen-rich silicon oxynitride layer.