Abstract: An automated method for generating a prosthesis from a 3D scan data, the method includes automatically extracting tooth information of a tooth included in the 3D scan data from the 3D scan data, automatically extracting a margin line of a prepared tooth, generating a plurality of two dimensional (“2D”) images including the prepared tooth and an adjacent tooth adjacent to the prepared tooth, automatically generating a 3D temporary prosthesis data based on the plurality of 2D images and deforming a single tooth model corresponding to the prepared tooth using the margin line and the 3D temporary prosthesis data to generate a 3D prosthesis data.

Abstract: Provided herein is a semiconductor device including: a channel layer; a data storage layer surrounding the channel layer and extending along the channel layer; interlayer insulating layers surrounding the data storage layer and stacked along the channel layer, wherein the interlayer insulating layers are spaced apart from each other, wherein a conductive area is disposed between the interlayer insulating layers; a conductive pattern disposed in the conductive area and surrounding the data storage layer; buffer patterns disposed between the interlayer insulating layers and the data storage layer and surrounding the data storage layer, wherein each of the buffer patterns includes a densified area, wherein the buffer patterns are separated from each other by the conductive area; and a blocking insulating pattern disposed between the conductive pattern and the data storage layer and surrounding the data storage layer.

Abstract: Provided herein is a semiconductor device including: a channel layer; a data storage layer surrounding the channel layer and extending along the channel layer; interlayer insulating layers surrounding the data storage layer and stacked along the channel layer, wherein the interlayer insulating layers are spaced apart from each other, wherein a conductive area is disposed between the interlayer insulating layers; a conductive pattern disposed in the conductive area and surrounding the data storage layer; buffer patterns disposed between the interlayer insulating layers and the data storage layer and surrounding the data storage layer, wherein each of the buffer patterns includes a densified area, wherein the buffer patterns are separated from each other by the conductive area; and a blocking insulating pattern disposed between the conductive pattern and the data storage layer and surrounding the data storage layer.

Abstract: Provided herein is a semiconductor device including: a channel layer; a data storage layer surrounding the channel layer and extending along the channel layer; interlayer insulating layers surrounding the data storage layer and stacked along the channel layer, wherein the interlayer insulating layers are spaced apart from each other, wherein a conductive area is disposed between the interlayer insulating layers; a conductive pattern disposed in the conductive area and surrounding the data storage layer; buffer patterns disposed between the interlayer insulating layers and the data storage layer and surrounding the data storage layer, wherein each of the buffer patterns includes a densified area, wherein the buffer patterns are separated from each other by the conductive area; and a blocking insulating pattern disposed between the conductive pattern and the data storage layer and surrounding the data storage layer.

Abstract: Provided herein is a semiconductor device including: a channel layer; a data storage layer surrounding the channel layer and extending along the channel layer; interlayer insulating layers surrounding the data storage layer and stacked along the channel layer, wherein the interlayer insulating layers are spaced apart from each other, wherein a conductive area is disposed between the interlayer insulating layers; a conductive pattern disposed in the conductive area and surrounding the data storage layer; buffer patterns disposed between the interlayer insulating layers and the data storage layer and surrounding the data storage layer, wherein each of the buffer patterns includes a densified area, wherein the buffer patterns are separated from each other by the conductive area; and a blocking insulating pattern disposed between the conductive pattern and the data storage layer and surrounding the data storage layer.

Abstract: Provided herein is a semiconductor device including: a channel layer; a data storage layer surrounding the channel layer and extending along the channel layer; interlayer insulating layers surrounding the data storage layer and stacked along the channel layer, wherein the interlayer insulating layers are spaced apart from each other, wherein a conductive area is disposed between the interlayer insulating layers; a conductive pattern disposed in the conductive area and surrounding the data storage layer; buffer patterns disposed between the interlayer insulating layers and the data storage layer and surrounding the data storage layer, wherein each of the buffer patterns includes a densified area, wherein the buffer patterns are separated from each other by the conductive area; and a blocking insulating pattern disposed between the conductive pattern and the data storage layer and surrounding the data storage layer.

Abstract: Provided herein is a semiconductor device including: a channel layer; a data storage layer surrounding the channel layer and extending along the channel layer; interlayer insulating layers surrounding the data storage layer and stacked along the channel layer, wherein the interlayer insulating layers are spaced apart from each other, wherein a conductive area is disposed between the interlayer insulating layers; a conductive pattern disposed in the conductive area and surrounding the data storage layer; buffer patterns disposed between the interlayer insulating layers and the data storage layer and surrounding the data storage layer, wherein each of the buffer patterns includes a densified area, wherein the buffer patterns are separated from each other by the conductive area; and a blocking insulating pattern disposed between the conductive pattern and the data storage layer and surrounding the data storage layer.

Abstract: An apparatus for driving a backlight unit including a lamp unit including a plurality of lamps includes an error amplifying unit configured to detect an error voltage between a feedback voltage corresponding to a current flowing to the lamp unit and a preset first reference voltage, a soft signal generation unit configured to generate a soft start signal of the lamp unit, a high-frequency signal driving signal generating unit configured to generate a high-frequency driving signal of the of the lamp unit, a high-frequency driving termination determining unit configured to generate a high-frequency driving termination signal when the error voltage is equal in voltage level to the soft start signal, and a high-frequency driving signal blocking unit configured to block the high-frequency driving signal in advance when the high-frequency driving termination signal is inputted.

Abstract: A control circuit of a DC-DC converter is provided. A mode selection section selects an ACF or LLC mode. A soft start section generates a soft start signal in the ACF and LLC modes. A PWM comparison section compares a current detection signal with a feedback signal, a feedback reference signal and the soft start signal in the ACF mode, and generates a PWM signal based on a comparison result. A selection section selects the PWM signal of the PWM comparison section in the ACF mode. A clock generation section generates a clock signal having a fixed frequency in the ACF mode, and generates a clock signal having a frequency based on an operating current and the soft start signal in the LLC mode. A latch section maintains the PWM signal in response to the clock signal in the ACF mode and maintains the clock signal in the LLC mode.