Patents by Inventor Jeong Dae Suh

Jeong Dae Suh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5750474
    Abstract: A superconductor-insulator-superconductor Josephson tunnel junction, comprising: a single crystalline substrate having a perovskite crystal structure; a template layer formed of a b-axis oriented PBCO thin film on the substrate; and a trilayer structure consisting of a lower electrode, a barrier layer and an upper electrode, which serve as a superconductor, an insulator and a superconductor, respectively, the lower electrode and the upper electrode each being formed of an a-axis oriented YBCO superconducting thin film and having an oblique junction edge at an angle of 30.degree. to 70.degree., the barrier layer being formed of an insulating thin film between the two superconducting electrodes, can be operated at a low power with an exceptional speed in calculation and data processing.
    Type: Grant
    Filed: September 5, 1996
    Date of Patent: May 12, 1998
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Gun-Yong Sung, Jeong-Dae Suh
  • Patent number: 5677264
    Abstract: The present invention discloses a process for forming an a-axis superconducting junction by adjusting the deposition temperature of an oxide normal conductor layer/and oxide superconductor layer/an oxide insulating layer/an oxide normal conductor layer/and an oxide superconductor layer, which are sequentially multilayered on an oxide single crystalline substrate. According to the present invention, the oxide superconductor layer and the oxide insulating layer have an a-axis oriented perpendicularly, and the oxide normal conductor layer have a b-axis oriented perpendicularly, so that a superconductor Josephson junction may be obtained.
    Type: Grant
    Filed: August 13, 1996
    Date of Patent: October 14, 1997
    Assignee: Electronics & Telecommunications Research Institute
    Inventors: Jeong-Dae Suh, Gun-Yong Sung
  • Patent number: 5663081
    Abstract: Disclosed is a method for making a high-temperature super-conducting field-effect transistor with a thick super-conducting channel, the method comprising the steps of depositing a template layer on an oxide crystal substrate by using a pulse laser depositing apparatus; forming a YBa.sub.2 Cu.sub.3 O.sub.7-x layer on the template layer; patterning the YBa.sub.2 Cu.sub.3 O.sub.7-x layer to form a patterned YBa.sub.2 Cu.sub.3 O.sub.7-x layer having an opening and expose a surface portion of the template layer; depositing a YBa.sub.2 Cu.sub.3 O.sub.7-x channel layer on the surface portion of the template layer and over the patterned YBa.sub.2 Cu.sub.3 O.sub.7-x layer, the channel layer having a thickness of from 60 to 100 nm; sequentially forming an SrTiO.sub.3 protective layer and an SrTiO.sub.
    Type: Grant
    Filed: November 30, 1994
    Date of Patent: September 2, 1997
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Gun-Yong Sung, Jeong-Dae Suh