Abstract: The method of the present invention includes providing a silicon substrate having an impurity region, forming an inter-layer insulating film having a contact hole in the impurity region and forming a titanium film and titanium nitride film in the contact hole. The method of the present invention further includes conducting a heat treatment to cause a reaction between the titanium film and the silicon substrate and forming a tungsten plug on the titanium nitride film in the contact hole. The device of the present invention including the bit lines are made up of a first inter-layer insulating film on the substrate having a first contact hole over the impurity region, a titanium film in the first contact hole, a titanium nitride film on the titanium film, a titanium silicide film on the silicon substrate wherein the titanium silicide film does not include an agglomerate, a tungsten plug on the titanium nitride film in the first contact hole and a circuit element on the first inter-layer insulating film.

Abstract: A method for forming an interconnection of a semiconductor device including a step of sequentially stacking a first insulation layer, a first semiconductor layer, a barrier metal layer and a second semiconductor layer on a semiconductor substrate, a step of forming an amorphous first tungsten silicide layer on the second semiconductor layer, a step of transforming the first tungsten silicide layer into a second tungsten silicide layer having a tetragonal crystal structure by an annealing process; a step of forming an etching mask on the second tungsten silicide layer, and a step of sequentially selectively etching the second tungsten silicide layer, the second semiconductor layer, the barrier metal layer and the first semiconductor layer by employing the etching mask.

Abstract: The method of the present invention includes providing a silicon substrate having an impurity region, forming an inter-layer insulating film having a contact hole in the impurity region and forming a titanium film and titanium nitride film in the contact hole. The method of the present invention further includes conducting a heat treatment to cause a reaction between the titanium film and the silicon substrate and forming a tungsten plug on the titanium nitride film in the contact hole.

Abstract: The present invention relates to a method of forming a contact in semiconductor device, more particularly, to a method of forming a tungsten bitline contact in a semiconductor device which prevents the decrease of impurity ion density in an impurity region and reduces both contact resistance between a plug and the impurity region and leakage current in a junction by forming an extra barrier layer in a metal barrier layer having been deposited on the impurity region, thereby improving operation speed of a semiconductor device and lessening power consumption.