Abstract: An organic light emitting device is disclosed, which comprises: a substrate; a cathode over the substrate; an anode disposed over the cathode; and an organic light emitting layer comprising a first emitting part, a second emitting part between the first emitting part and the anode and a third emitting part between the first and second emitting parts and positioned between the cathode and the anode, wherein the first emitting part comprises a first emitting material layer, and the second emitting part comprises a second emitting material layer, wherein the third emitting part comprises a third emitting material layer, and the third emitting material layer comprises a red emitting material layer and a green emitting material layer, wherein the green emitting material layer comprises a first p-type host, a first n-type host and a green dopant.

Abstract: An organic light emitting device (e.g., a display device or a lighting device) is described, which includes a substrate; and an OLED over the substrate, the organic light emitting diode comprising: a cathode; an anode over the cathode; and an organic light emitting layer including a first emitting part, a second emitting part between the first emitting part and the anode and a third emitting part between the first and second emitting parts. The first emitting part includes a first EML, a p-doping layer between the cathode and the first EML, an n-doping layer between the first EML and the p-doping layer and a first ETL between the first EML and the n-doping layer. The second emitting part includes a second EML, and the third emitting part includes a third EML. The p-doping layer includes an HTL and first and second p-doping layers at both sides of the HTL, respectively.

Abstract: An organic light emitting diode (OLED) and an organic light emitting device comprising the OLED (e.g., a display device or a lighting device) are described. An emissive layer disposed between two electrodes comprises an exciton control layer between a red emitting material layer and a green emitting material layer. Exciton recombination zone is distributed uniformly within the entire area of an emitting material layer and holes and electrons can be injected into the emitting material layer in balance. The degradations of the luminous materials and/or charge transporting materials caused by quenched excitons as non-emission can be minimized. The luminous lifespan of the OLED can be improved, while maintaining luminous efficiency.

Abstract: A white light emitting device, or more particularly an inverted white light emitting device, includes a plurality of stacks configured to emit white light, and an optical compensation layer provided at an outer surface of an electrode through which light is emitted to the outside. The configuration reduces the thickness of an electron transport layer adjacent to a cathode in the stack and therefore reduces the driving voltage and improves the viewing angle characteristics and as well as the efficiency.

Abstract: The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode and a second electrode facing each other; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron transporting layer positioned between the QD emitting material layer and the second electrode and including an electron-property material and a hole-property material.

Abstract: The present disclosure relates to a light emitting diode in which a charge transfer layer, which disposed between two electrodes, including an inorganic material in which an amphiphilic ligand is connected to a surface of an inorganic nano particle and to a light emitting device having the diode. The amphiphilic ligand minimizes defects on the surface of the inorganic nano particle, thus charge transfer materials can be stably. Since charge transfer layers and an emitting material layer can be prepared by using an orthogonal solvent, interface morphology between the emissive layers can be improved.

Abstract: The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode and a second electrode facing each other; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron transporting layer positioned between the QD emitting material layer and the second electrode and including an electron-property material and a hole-property material.

Abstract: The present disclosure relates to a light emitting diode in which a charge transfer layer, which disposed between two electrodes, including an inorganic material in which an amphiphilic ligand is connected to a surface of an inorganic nano particle and to a light emitting device having the diode. The amphiphilic ligand minimizes defects on the surface of the inorganic nano particle, thus charge transfer materials can be stably. Since charge transfer layers and an emitting material layer can be prepared by using an orthogonal solvent, interface morphology between the emissive layers can be improved.