Abstract: A polysiloxane is prepared by hydrosilylation reaction of a polyorganosilicate resin and an SiH terminated polydiorganosiloxane. The polysiloxane acts as a controlled release additive when formulated into a release coating composition. The release coating composition can be coated on a surface of a substrate and cured to form a release liner.

Abstract: Disclosed is a quantum dot light-emitting diode including a positive electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a negative electrode, wherein the hole injection layer is a p-type oxide semiconductor represented by Formula 1 below: Cu2Sn2-XS3—(GaX)2O3,??[Formula 1] wherein X is greater than 0.2 and less than 1.5 (0.2<x<1.5).

Abstract: Provided is a light emitting diode (LED) and a multi-stacked LED including a charge generation junction (CGJ) layer, and a manufacturing method thereof. An LED including an anode, a hole transport layer, a light emitting layer, and a cathode, includes a CGJ layer in a layer-by-layer structure in which an n-type oxide and a p-type oxide formed on at least one surface of the light emitting layer are sequentially stacked. Here, the n-type oxide includes zinc oxide (ZnO) and the p-type oxide is represented by the following Formula: Cu2Sn2-XS3—(GaX)2O3. Here, 0.2<x<1.5.

Abstract: A refill system includes a tempering furnace, a refill furnace which stores the molten potassium nitrate obtained by melting powdered potassium nitrate, a supply unit which supplies the molten potassium nitrate to the tempering furnace, a tempering furnace side load measuring unit which measures a load amount of the molten potassium nitrate in the tempering furnace, a refill furnace side load measuring unit which measures a load amount of the molten potassium nitrate in the refill furnace, and a central control unit which checks the load amount of the molten potassium nitrate in the tempering furnace and the refill furnace in real time, and controls the supply unit to stop supplying the molten potassium nitrate to the tempering furnace when the load amount of the molten potassium nitrate in the tempering furnace is greater than or equal to a predetermined load amount.

Abstract: Provided is a light emitting diode (LED) and a multi-stacked LED including a charge generation junction (CGJ) layer, and a manufacturing method thereof. An LED including an anode, a hole transport layer, a light emitting layer, and a cathode, includes a CGJ layer in a layer-by-layer structure in which an n-type oxide and a p-type oxide formed on at least one surface of the light emitting layer are sequentially stacked. Here, the n-type oxide includes zinc oxide (ZnO) and the p-type oxide is represented by the following Formula: Cu2Sn2-XS3—(GaX)2O3. Here, 0.2<x<1.5.

Abstract: A polysiloxane is prepared by hydrosilylation reaction of a polyorganosilicate resin and an SiH terminated polydiorganosiloxane. The polysiloxane acts as a controlled release additive when formulated into a release coating composition. The release coating composition can be coated on a surface of a substrate and cured to form a release liner.

Abstract: Provided is a light emitting diode (LED) and a multi-stacked LED including a charge generation junction (CGJ) layer, and a manufacturing method thereof. An LED including an anode, a hole transport layer, a light emitting layer, and a cathode, includes a CGJ layer in a layer-by-layer structure in which an n-type oxide and a p-type oxide formed on at least one surface of the light emitting layer are sequentially stacked. Here, the n-type oxide includes zinc oxide (ZnO) and the p-type oxide is represented by the following Formula: Cu2Sn2-XS3—(GaX)2O3. Here, 0.2<x<1.5.

Abstract: Disclosed is a quantum dot light-emitting diode including a positive electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a negative electrode, wherein the hole injection layer is a p-type oxide semiconductor represented by Formula 1 below: Cu2Sn2-XS3—(GaX)2O3,??[Formula 1] wherein X is greater than 0.2 and less than 1.5 (0.2<x<1.5).

Abstract: Disclosed is a quantum dot light-emitting diode including a positive electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a negative electrode, wherein the hole injection layer is a p-type oxide semiconductor represented by Formula 1 below: Cu2Sn2-XS3—(GaX)2O3,??[Formula 1] wherein X is greater than 0.2 and less than 1.5 (0.2<x<1.5).

Abstract: Provided is a light emitting diode (LED) and a multi-stacked LED including a charge generation junction (CGJ) layer, and a manufacturing method thereof. An LED including an anode, a hole transport layer, a light emitting layer, and a cathode, includes a CGJ layer in a layer-by-layer structure in which an n-type oxide and a p-type oxide formed on at least one surface of the light emitting layer are sequentially stacked. Here, the n-type oxide includes zinc oxide (ZnO) and the p-type oxide is represented by the following Formula: Cu2Sn2-XS3—(GaX)2O3. Here, 0.2<x<1.5.

Abstract: Disclosed is a quantum dot light-emitting diode including a positive electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a negative electrode, wherein the hole injection layer is a p-type oxide semiconductor represented by Formula 1 below: Cu2Sn2-XS3—(GaX)2O3,??[Formula 1] wherein X is greater than 0.2 and less than 1.5 (0.2<x<1.5).

Abstract: The present invention provides a light emitting element using a charge generating layer formed through a solution process and a method for manufacturing the same. The present invention provides a light emitting element comprising a positive electrode, a negative electrode, a light emitting layer, and a charge generating layer, the light emitting element being characterized in that the charge generating layer has a p-type layer, which comprises an organic semiconductor, and an n-type layer, which comprises an oxide semiconductor, formed in a layer-by-layer structure through a solution process.

Abstract: The present invention provides a light emitting element using a charge generating layer formed through a solution process and a method for manufacturing the same. The present invention provides a light emitting element comprising a positive electrode, a negative electrode, a light emitting layer, and a charge generating layer, the light emitting element being characterized in that the charge generating layer has a p-type layer, which comprises an organic semiconductor, and an n-type layer, which comprises an oxide semiconductor, formed in a layer-by-layer structure through a solution process.

Abstract: The present invention relates to a polymeric compound used to a colored resin composition for a color filter, which contains a structure represented by Chemical Formula 1 or Chemical Formula 2 and has excellent heat resistance and light resistance and improved chemical resistance. Therefore, the compound can be applied to various materials, particularly, a display material such as a resin composition for a color filter.

Abstract: The present invention relates to an organic light emitting diode using a p-type oxide semiconductor containing gallium, and a preparation method therefor. According to the present invention, provided is an organic light emitting diode comprising an anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and a cathode, wherein the hole injection layer is a p-type oxide semiconductor containing Ga.

Abstract: The present invention relates to a polymeric triarylmethane dye, a blue resin composition for a color filter including the polymeric dye, and a color filter using the resin composition. The blue resin composition of the present invention is highly soluble in solvents and has excellent luminance, contrast, heat resistance, and chemical resistance due to the use of the polymeric triarylmethane dye. Particularly, the blue resin composition exhibits higher luminance and contrast than blue resin compositions using existing pigments. In addition, the blue resin composition of the present invention has greatly improved heat resistance and chemical resistance compared to blue resin compositions using existing triarylmethane dye monomers.

Abstract: Disclosed is a blue dye compound for a color filter represented by Chemical Formula 1. The blue colored resin composition including the blue dye compound has excellent solubility to an organic solvent, such as propylene glycol methyl ether acetate (PGMEA), excellent miscibility with the other dyes or pigments and high heat resistance. Therefore, when using the blue dye compound, it is possible to obtain a color filter having high luminance and contrast.

Abstract: Disclosed is a blue dye compound for a color filter represented by Chemical Formula 1. The blue colored resin composition including the blue dye compound has excellent solubility to an organic solvent, such as propylene glycol methyl ether acetate (PGMEA), excellent miscibility with the other dyes or pigments and high heat resistance. Therefore, when using the blue dye compound, it is possible to obtain a color filter having high luminance and contrast.

Abstract: A vehicle having a lamp includes a multi lamp disposed to radiate a first color light for backward movement or a second color light for a turn movement of a vehicle. A turn lamp is disposed near the multi lamp portion to selectively radiate a second color light for a turning movement. A controller controls the operation of the multi lamp and the turn lamp depending on a turn signal or a reverse signal.

Abstract: The present disclosure relates to a purple dye compound for a color filter and a coloring resin composition for a color filter containing the same. The novel xanthene-based purple dye compound or the polymer dye compound obtained using the same as a monomer has superior solvent resistance and superior miscibility with a pigment in an organic solvent. Further, it exhibits superior heat resistance, chemical resistance, light resistance and brightness due to the homopolymer structure. Accordingly, a coloring resin composition containing the same can be used widely as a dye for synthetic resins and synthetic fibers, as a coloring agent for polymer materials, for a color filter used in LCDs, PDPs, etc., and so forth.