Abstract: An active matrix LCD which essentially differs from presently available active matrix LCDs in that the layout of a first electrode of a storage capacitor associated with each pixel thereof is modified in such a manner as to significantly increase the aperture and contrast ratios thereof relative to those of presently available active matrix LCDs. More particularly, the first electrodes of the storage capacitors are laid out in such a manner as to substantially surround their associated pixel electrodes, and preferably, only overlap a marginal edge portion of their associated pixel electrodes, about the periphery thereof.

Abstract: A method for manufacturing a semiconductor device, comprising the steps of forming an insulating interlayer on a semiconductor substrate to provide a semiconductor intermediate product, providing the insulating interlayer with an opening, forming a first metal layer on the semiconductor intermediate product, heat-treating the first metal layer to fill up the opening with the metal, forming a second metal layer on the first metal layer, and then heat-treating the second layer to planarize the metal layer. An alternative embodiment of the invention encompasses a method for manufacturing a semiconductor device, comprising the steps of providing a semiconductor wafer with an opening formed thereon, forming a metal layer on the semiconductor wafer, and then heat-treating the metal layer to fill up the opening with the metal, wherein pure Al or an aluminum alloy having no Si component is used as the metal in forming the metal layer.