Patents by Inventor Jeong-hawan Yang

Jeong-hawan Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE HAVING MULTI-GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20110033989
    Abstract: Provided are a semiconductor device having a mesa-type active region including a plurality of slabs and a method of manufacturing the semiconductor device. The semiconductor device includes a first active region and a second active region. The first active region is formed in a line-and-space pattern on a substrate and includes the slabs, each slab having a first surface, a second surface facing a direction opposite to the first side, and a top surface. The first active region and the second active region are composed of identical or different materials. The second active region contacts at least one end of each of the slabs on the substrate to connect the slabs to one another The method includes forming a first active region in a line-and-space pattern on the substrate and forming the second active region.
    Type: Application
    Filed: October 20, 2010
    Publication date: February 10, 2011
    Inventors: Jung-a CHOI, Jeong-hawan Yang, You-seung Jin
  • Semiconductor device having multi-gate structure and method of manufacturing the same
    Patent number: 7838915
    Abstract: Provided are a semiconductor device having a mesa-type active region including a plurality of slabs and a method of manufacturing the semiconductor device. The semiconductor device includes a first active region and a second active region. The first active region is formed in a line-and-space pattern on a substrate and includes the slabs, each slab having a first surface, a second surface facing a direction opposite to the first side, and a top surface. The first active region and the second active region are composed of identical or different materials. The second active region contacts at least one end of each of the slabs on the substrate to connect the slabs to one another. The method includes forming a first active region in a line-and-space pattern on the substrate and forming the second active region.
    Type: Grant
    Filed: February 5, 2005
    Date of Patent: November 23, 2010
    Assignee: Samsung Electronics Co.. Ltd.
    Inventors: Jung-a Choi, Jeong-hawan Yang, You-scung Jin
  • Semiconductor Device Having Multi-Gate Structure and Method of Manufacturing the Same
    Publication number: 20070272925
    Abstract: Provided are a semiconductor device having a mesa-type active region including a plurality of slabs and a method of manufacturing the semiconductor device. The semiconductor device includes a first active region and a second active region. The first active region is formed in a line-and-space pattern on a substrate and includes the slabs, each slab having a first surface, a second surface facing a direction opposite to the first side, and a top surface. The first active region and the second active region are composed of identical or different materials. The second active region contacts at least one end of each of the slabs on the substrate to connect the slabs to one another The method includes forming a first active region in a line-and-space pattern on the substrate and forming the second active region.
    Type: Application
    Filed: February 5, 2005
    Publication date: November 29, 2007
    Inventors: Jung-a Choi, Jeong-hawan Yang, You-scung Jin