Abstract: According to an embodiment of the present invention, an apparatus for processing substrate comprising: a susceptor; and a cover unit installed on an upper part of the susceptor, the substrate is placed on the cover unit, wherein the cover unit comprises: a cover frame having one or more air gaps; and one or more covers having a shape corresponding to each of the air gaps and mountable in each of the air gaps, wherein a depth of the air gap is at least three times the thickness of the substrate.

Abstract: Provided is a batch type substrate processing apparatus that generates plasma by a plurality of electrodes to perform a processing process on a substrate. The batch type substrate processing apparatus includes a reaction tube, a plurality of electrodes, and an electrode protection part. The plurality of electrodes includes first and second power supply electrodes spaced apart from each other and first and second ground electrodes provided between the first power supply electrode and the second power supply electrode to correspond to the first power supply electrode and the second power supply electrode, respectively.

Abstract: According to an embodiment of the present invention, an apparatus for processing substrate comprising: a susceptor; and a cover unit installed on an upper part of the susceptor, the substrate is placed on the cover unit, wherein the cover unit comprises: a cover frame having one or more air gaps; and one or more covers having a shape corresponding to each of the air gaps and mountable in each of the air gaps, wherein a depth of the air gap is at least three times the thickness of the substrate.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a tube configured to provide a processing space, a partition wall configured to provide a discharge space in which plasma is generated, a gas supply pipe configured to supply a process gas to the discharge space, and a plurality of electrodes disposed outside the tube to generate the plasma in the discharge space. The tube has a plurality of recesses recessed inward from the outermost circumferential surface of the tube, and the plurality of electrodes are accommodated in the plurality of recesses, respectively.

Abstract: The present disclosure relates to a method for predicting prognosis of cancer and a composition thereof. More specifically, the present disclosure relates to a composition and a method for predicting prognosis of breast cancer and predicting the treatment effect of chemotherapy. The present disclosure provides gene expression information useful for predicting whether a cancer patient is more likely to respond favorably to treatment in chemotherapy.

Abstract: Provided is a batch type substrate processing apparatus that supplies a process gas decomposed in a discharge space, which is distinguished from a processing space, into the processing space. The batch type substrate processing apparatus includes a reaction tube configured to provide a processing space, a plasma forming part having a discharge space, which is distinguished from the processing space by a partition wall and generating plasma in the discharge space by a plurality of electrodes extending along a longitudinal direction of the reaction tube. The plurality of electrodes includes a plurality of power supply electrodes spaced apart from each other and a plurality of ground electrodes provided between the plurality of power supply electrodes.

Abstract: A plasma treatment apparatus according to the present invention includes an induction chamber in which a source gas is introduced to generate plasma therein, a process chamber in which a substrate to be treated is treated by the plasma generated in the induction chamber, an inductively coupled plasma (ICP) antenna disposed outside the induction chamber and configured to form an inductive magnetic field so as to generate plasma from the source gas introduced into the induction chamber, and a high-frequency oscillator configured to apply a RF power to the ICP antenna.

Abstract: Provided is a batch-type substrate processing apparatus which supplies, into a processing space, a process gas decomposed in a separate space. The substrate processing apparatus includes: a tube; a substrate support part; a gas supply pipe; an exhaust part; and a plasma reaction part, wherein the plasma part may include a plurality of power supply electrode parts and a ground electrode part.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a tube configured to provide a processing space, a partition wall configured to provide a discharge space in which plasma is generated, a gas supply pipe configured to supply a process gas to the discharge space, and a plurality of electrodes configured to generate plasma in the discharge space. At least one of the plurality of electrodes is disposed outside the partition wall, and at least one of the plurality of electrodes is disposed inside the partition wall.

Abstract: A substrate processing apparatus in accordance with an exemplary embodiments include: a first tube configured to provide a processing space in which a plurality of substrates are processed; a substrate support part configured to load the plurality of substrates in a first direction in the processing space; a plurality of gas supply parts provided with supply ports for supplying a process gas required for a process in which the substrates are processed; an exhaust part configured to communicate with the first tube and discharge process residues inside the processing space to the outside; and a plasma reaction part provided outside the first tube, and configured to decompose, with plasma, the process gas supplied from the gas supply part and provide the decomposed process gas to the processing space.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a tube configured to provide a processing space, a partition wall configured to provide a discharge space in which plasma is generated, a gas supply pipe configured to supply a process gas to the discharge space, and a plurality of electrodes configured to generate plasma in the discharge space. At least one of the plurality of electrodes is disposed outside the partition wall, and at least one of the plurality of electrodes is disposed inside the partition wall.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a tube configured to provide a processing space, a partition wall configured to provide a discharge space in which plasma is generated, a gas supply pipe configured to supply a process gas to the discharge space, and a plurality of electrodes disposed outside the tube to generate the plasma in the discharge space. The tube has a plurality of recesses recessed inward from the outermost circumferential surface of the tube, and the plurality of electrodes are accommodated in the plurality of recesses, respectively.

Abstract: A plasma treatment apparatus according to the present invention includes an induction chamber in which a source gas is introduced to generate plasma therein, a process chamber in which a substrate to be treated is treated by the plasma generated in the induction chamber, an inductively coupled plasma (ICP) antenna disposed outside the induction chamber and configured to form an inductive magnetic field so as to generate plasma from the source gas introduced into the induction chamber, and a high-frequency oscillator configured to apply a RF power to the ICP antenna.

Abstract: Provided is a batch-type substrate processing apparatus which supplies, into a processing space, a process gas decomposed in a separate space. The substrate processing apparatus includes: a tube; a substrate support part; a gas supply pipe; an exhaust part; and a plasma reaction part, wherein the plasma part may include a plurality of power supply electrode parts and a ground electrode part.

Abstract: A substrate processing apparatus in accordance with an exemplary embodiments include: a first tube configured to provide a processing space in which a plurality of substrates are processed; a substrate support part configured to load the plurality of substrates in a first direction in the processing space; a plurality of gas supply parts provided with supply ports for supplying a process gas required for a process in which the substrates are processed; an exhaust part configured to communicate with the first tube and discharge process residues inside the processing space to the outside; and a plasma reaction part provided outside the first tube, and configured to decompose, with plasma, the process gas supplied from the gas supply part and provide the decomposed process gas to the processing space.