Abstract: A light-emitting element transfer system includes raw film cutting device for forming a transfer member by cutting a raw film, a stretching device for stretching a transfer film with a plurality of light-emitting elements disposed thereon, a circuit board support member for supporting a circuit board and transport head for adsorbing the transfer member and transferring the light-emitting elements on the transfer film onto the circuit board by using the adsorbed transfer member.

Abstract: A display includes: a display panel; and a panel bottom sheet disposed below the display panel, the panel bottom sheet including: a first heat dissipation layer; a second heat dissipation layer over the first heat dissipation layer, including a first opening formed completely through the second heat dissipation layer in a thickness direction; a heat dissipation coupling interlayer between the first heat dissipation layer and the second heat dissipation layer, and a heat dissipation substrate on the second heat dissipation layer.

Abstract: A pouch-type battery case includes a cup portion, which accommodates therein an electrode assembly formed by stacking an electrode and a separator, and a plurality of die edges connecting an outer wall of the cup portion to a side extending from the outer wall. The die edges include a first region, which is rounded at a first radius (r1) of curvature and at which an electrode tab extending from the electrode is positioned, and a second region which is other than the first region and rounded at one or more second radii (r2, r3, r4) of curvature less than or equal to the first radius (r1) of curvature. The second region is divided into an inner region and an outer region with respect to the first region, and the radius (r2) of curvature in the inner region differs from the radii (r3, r4) of curvature in the outer region.

Abstract: An apparatus for transferring light emitting elements includes: a transfer member including a stamp layer having an adhesive property and a base layer on a first surface of the stamp layer, the transfer member having a transfer portion, a folding portion, and an incision groove at a boundary between the transfer portion and the folding portion; a protective film on a second surface of the stamp layer, the protective film having an incision groove defining a transfer area and a folding area; an inversion member supporting the transfer member; and a transfer head including a chuck configured to adsorb to the base layer and to move the transfer member vertically and horizontally. The transfer portion is at a center with respect to the incision groove, and the folding portion is at an outer side of the incision groove with respect to the transfer portion.

Abstract: The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. By comprising the organic electroluminescent compound of the present disclosure, an organic electroluminescent device having improved driving voltage, luminous efficiency, and/or lifespan characteristics can be provided.

Abstract: The present disclosure may provide a method of fabricating a display panel, the method includes picking up, by a transfer head, a transfer member located on a support member, detaching a light-emitting element from a donor substrate by attaching the transfer member picked up by the transfer head to the light-emitting element on the donor substrate to lift the light-emitting element, aligning, by the transfer head, the light-emitting element attached to the transfer member on a circuit board, and detaching the transfer member from the transfer head, bonding the light-emitting element attached to the transfer member onto the circuit board and separating, by the transfer head, the transfer member from the light-emitting element bonded to the circuit board to remove the transfer member.

Abstract: Disclosed is a method for making an SOI MOSFET, which is capable of improving threshold voltage variations and a parasitic bipolar effect generated in the formation of fully depleted (FD) SOI semiconductor integrated circuits using a recess channel. The method involves the steps of forming a buried oxide film and an active silicon film over a silicon-on-insulator substrate, forming a channel at a recess channel, forming dummy spacers at opposite side walls of the etched active silicon film, forming a gate between the dummy spacers, forming a photoresist film on the gate and the active silicon film, forming lightly doped drain regions, removing the dummy spacers, forming lightly doped ion regions, respectively, forming spacers at opposite side walls of the recess channel region, respectively, removing the photoresist film, forming a source region and a drain region, forming source/drain electrodes and a gate electrode on the resultant structure.

Abstract: The present invention discloses a SOI device capable of removing a floating body effect and improving a static electricity emission characteristic and a method of fabricating the same. The SOI device according to the present invention, comprising: a base substrate; a buried oxide layer formed to expose a predetermined region of the base substrate on the base substrate; a body contact layer formed to the same thickness as the buried oxide layer on the exposed base substrate region; a body layer of a transistor formed on the buried oxide layer and the body contact layer; a gate having a gate oxide layer formed on the body layer; and a drain region and a source region formed in a depth contacting with the buried oxide in the body layer region at both sides of the gate, the source being in contact with the body contact layer.

Abstract: Disclosed is a method for making an SOI MOSFET, which is capable of improving threshold voltage variations and a parasitic bipolar effect generated in the formation of fully depleted (FD) SOI semiconductor integrated circuits using a recess channel. The method involves the steps of forming a buried oxide film and an active silicon film over a silicon-on-insulator substrate, forming a channel at a recess channel, forming dummy spacers at opposite side walls of the etched active silicon film, forming a gate between the dummy spacers, forming a photoresist film on the gate and the active silicon film, forming lightly doped drain regions, removing the dummy spacers, forming lightly doped ion regions, respectively, forming spacers at opposite side walls of the recess channel region, respectively, removing the photoresist film, forming a source region and a drain region, forming source/drain electrodes and a gate electrode on the resultant structure.