Patents by Inventor Jeong Ho Lyu
Jeong Ho Lyu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240020988Abstract: A driving environment is perceived based on sensor data obtained from a plurality of sensors mounted on the ADV, including detecting a traffic light, where the plurality of sensors includes at least one image sensor. A first sensor setting is applied to the at least one image sensor to capture a first frame, and a second sensor setting is applied to the at least one image sensor to capture a second frame. A color of the traffic light is determined based on sensor data of the at least one image sensor in the first frame. The ADV is controlled to drive autonomously according to the color of the traffic light determined based on sensor data of the at least one image sensor in the first frame and a driving environment perceived based on sensor data of the at least one image sensor in the second frame.Type: ApplicationFiled: April 20, 2021Publication date: January 18, 2024Inventors: JEONG HO LYU, LINGCHANG LI
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Patent number: 10134788Abstract: A CMOS photodiode device for use in a dual-sensitivity imaging pixel contains at least two areas of differential doping. Transistors are provided in electrical contact with these areas to govern operation of signals emanating from the photodiode on two channels, each associated with a different sensitivity to light. A plurality of such photodiodes may be incorporate into a shared arrangement forming a single pixel, in order to enhance the signals.Type: GrantFiled: September 17, 2013Date of Patent: November 20, 2018Assignee: OmniVision Technologies, Inc.Inventors: Jeong-Ho Lyu, Sohei Manabe
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Patent number: 9711546Abstract: An image sensor pixel includes a first photodiode and a second photodiode disposed in a semiconductor material. The first photodiode has a first doped region, a first lightly doped region, and a first highly doped region. The second photodiode has a second full well capacity substantially equal to a first full well capacity of the first photodiode, and includes a second doped region, a second lightly doped region, and a second highly doped region. The image sensor pixel also includes a first microlens optically coupled to direct a first amount of image light to the first photodiode, and a second microlens optically coupled to direct a second amount of image light to the second photodiode. The first amount of image light is larger than the second amount of image light.Type: GrantFiled: March 2, 2016Date of Patent: July 18, 2017Assignee: OmniVision Technologies, Inc.Inventors: Jeong-Ho Lyu, Sohei Manabe
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Patent number: 9666631Abstract: An image sensor pixel includes a first photodiode, a second photodiode, a first microlens, a second microlens, and a filter. The first and second photodiode are disposed adjacent to each other in a semiconductor material. The first photodiode has a first full well capacity that is substantially equal to a second full well capacity of the second photodiode. The first microlens is disposed over the first photodiode and the second microlens is disposed over the second photodiode. The second microlens is substantially identical to the first microlens. The filter is disposed between the second microlens and the second photodiode to reduce an intensity of the image light incident upon the second photodiode. The filter does not substantially affect the image light directed toward the first photodiode.Type: GrantFiled: May 19, 2014Date of Patent: May 30, 2017Assignee: OmniVision Technologies, Inc.Inventors: Jeong-Ho Lyu, Sohei Manabe
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Patent number: 9608019Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode disposed in has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. A first aperture sizer is disposed above the second photodiode to limit image light received by the second photodiode to a second amount that is less than a first amount of image light received by the first photodiode.Type: GrantFiled: March 2, 2016Date of Patent: March 28, 2017Assignee: OmniVision Technologies, Inc.Inventors: Jeong-Ho Lyu, Sohei Manabe
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Publication number: 20160181296Abstract: An image sensor pixel includes a first photodiode and a second photodiode disposed in a semiconductor material. The first photodiode has a first doped region, a first lightly doped region, and a first highly doped region. The second photodiode has a second full well capacity substantially equal to a first full well capacity of the first photodiode, and includes a second doped region, a second lightly doped region, and a second highly doped region. The image sensor pixel also includes a first microlens optically coupled to direct a first amount of image light to the first photodiode, and a second microlens optically coupled to direct a second amount of image light to the second photodiode. The first amount of image light is larger than the second amount of image light.Type: ApplicationFiled: March 2, 2016Publication date: June 23, 2016Inventors: Jeong-Ho Lyu, Sohei Manabe
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Publication number: 20160181297Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode disposed in has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. A first aperture sizer is disposed above the second photodiode to limit image light received by the second photodiode to a second amount that is less than a first amount of image light received by the first photodiode.Type: ApplicationFiled: March 2, 2016Publication date: June 23, 2016Inventors: Jeong-Ho Lyu, Sohei Manabe
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Patent number: 9324759Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. The first photodiode can be used to for measuring low light and the second photodiode can be used for measuring bright light.Type: GrantFiled: December 19, 2013Date of Patent: April 26, 2016Assignee: OmniVision Technologies, Inc.Inventors: Jeong-Ho Lyu, Sohei Manabe
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Publication number: 20150333099Abstract: An image sensor pixel includes a first photodiode, a second photodiode, a first microlens, a second microlens, and a filter. The first and second photodiode are disposed adjacent to each other in a semiconductor material. The first photodiode has a first full well capacity that is substantially equal to a second full well capacity of the second photodiode. The first microlens is disposed over the first photodiode and the second microlens is disposed over the second photodiode. The first microlens is substantially identical to the first microlens. The filter is disposed between the second microlens and the second photodiode to reduce an intensity of the image light incident upon the second photodiode. The filter does not substantially affect the image light directed toward the first photodiode.Type: ApplicationFiled: May 19, 2014Publication date: November 19, 2015Applicant: OMNIVISION TECHNOLOGIES, INC.Inventors: Jeong-Ho Lyu, Sohei Manabe
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Patent number: 9160958Abstract: An image sensor includes photosensitive regions, transfer transistors, and one or more shared charge-to-voltage mechanism. A method for reading out the image sensor includes enabling a first transfer transistor to transfer photo-generated charge from a first photosensitive region to a shared charge-to-voltage mechanism. The method also includes no more than partially enabling a second transfer transistor to partially turn on the second transfer transistor to increase a capacitance of the shared charge-to-voltage mechanism while the photo-generated charge is transferred from the first photosensitive region to the shared charge-to-voltage mechanism.Type: GrantFiled: December 18, 2013Date of Patent: October 13, 2015Assignee: OmniVision Technologies, Inc.Inventors: Sohei Manabe, Jeong-Ho Lyu
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Publication number: 20150179695Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode disposed in has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. The first photodiode can be used to for measuring low light and the second photodiode can be used for measuring bright light.Type: ApplicationFiled: December 19, 2013Publication date: June 25, 2015Applicant: OmniVision Technologies, Inc.Inventors: Jeong-Ho Lyu, Sohei Manabe
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Publication number: 20150172579Abstract: An image sensor includes photosensitive regions, transfer transistors, and one or more shared charge-to-voltage mechanism. A method for reading out the image sensor includes enabling a first transfer transistor to transfer photo-generated charge from a first photosensitive region to a shared charge-to-voltage mechanism. The method also includes no more than partially enabling a second transfer transistor to partially turn on the second transfer transistor to increase a capacitance of the shared charge-to-voltage mechanism while the photo-generated charge is transferred from the first photosensitive region to the shared charge-to-voltage mechanism.Type: ApplicationFiled: December 18, 2013Publication date: June 18, 2015Applicant: OMNIVISION TECHNOLOGIES, INC.Inventors: Sohei Manabe, Jeong-Ho Lyu
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Patent number: 9007504Abstract: Circuitry to reduce signal noise characteristics in an image sensor. In an embodiment, a bit trace line segment is located between neighboring respective segments of a source follower power trace and an additional trace which is to remain at a first voltage level during a pixel cell readout time period. In another embodiment, for each such trace segment, a smallest separation between the trace segment and the respective neighboring other one of such trace segments is substantially equal to or less than some maximum length to provide for parasitic capacitance between the bit line trace and one or more other traces.Type: GrantFiled: April 6, 2012Date of Patent: April 14, 2015Assignee: OmniVision Technologies, Inc.Inventors: Sohei Manabe, Jeong-Ho Lyu
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Publication number: 20150076330Abstract: A CMOS photodiode device for use in a dual-sensitivity imaging pixel contains at least two areas of differential doping. Transistors are provided in electrical contact with these areas to govern operation of signals emanating from the photodiode on two channels, each associated with a different sensitivity to light. A plurality of such photodiodes may be incorporate into a shared arrangement forming a single pixel, in order to enhance the signals.Type: ApplicationFiled: September 17, 2013Publication date: March 19, 2015Applicant: OmniVision Technologies, Inc.Inventors: Jeong-Ho Lyu, Sohei Manabe
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Patent number: 8817154Abstract: An image sensor pixel includes a photosensitive region and pixel circuitry. The photosensitive region accumulates an image charge in response to light incident upon the image sensor. The pixel circuitry includes a transfer-storage transistor, a charge-storage area, an output transistor, and a floating diffusion region. The transfer-storage transistor is coupled between the photosensitive region and the charge-storage area. The output transistor has a channel coupled between the charge-storage area and the floating diffusion region and has a gate tied to a fixed voltage potential. The transfer-storage transistor causes the image charge to transfer from the photosensitive region to the charge-storage area and to transfer from the charge-storage area to the floating diffusion region.Type: GrantFiled: August 30, 2012Date of Patent: August 26, 2014Assignee: OmniVision Technologies, Inc.Inventors: Sohei Manabe, Jeong-Ho Lyu
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Patent number: 8716768Abstract: A device includes a transistor including a source and a drain disposed in a substrate and a gate disposed above the substrate. The gate includes a first longitudinal member disposed above the source and the drain and running substantially parallel to a channel of the transistor. The first longitudinal member is disposed over a first junction isolation area. The gate also includes a second longitudinal member disposed above the source and the drain and running substantially parallel to the channel of the transistor. The second longitudinal member is disposed over a second junction isolation region. The gate also includes a cross member running substantially perpendicular to the channel of the transistor and connecting the first longitudinal member to the second longitudinal member. The cross member is disposed above and between the source and the drain.Type: GrantFiled: October 20, 2011Date of Patent: May 6, 2014Assignee: OmniVision Technologies, Inc.Inventors: Jeong-Ho Lyu, Sohei Manabe
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Patent number: 8686477Abstract: Pixel array structures to provide a ground contact for a CMOS pixel cell. In an embodiment, an active area of a pixel cell includes a photodiode disposed in a first portion of an active area, where a second portion of the active area extends from a side of the first portion. The second portion includes a doped region to provide a ground contact for the active area. In another embodiment, the pixel cell includes a transistor to transfer the charge from the photodiode, where a gate of the transistor is adjacent to the second portion and overlaps the side of the first portion.Type: GrantFiled: July 25, 2012Date of Patent: April 1, 2014Assignee: OmniVision Technologies, Inc.Inventors: Sohei Manabe, Jeong-Ho Lyu
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Publication number: 20140063304Abstract: An image sensor pixel includes a photosensitive region and pixel circuitry. The photosensitive region accumulates an image charge in response to light incident upon the image sensor. The pixel circuitry includes a transfer-storage transistor, a charge-storage area, an output transistor, and a floating diffusion region. The transfer-storage transistor is coupled between the photosensitive region and the charge-storage area. The output transistor has a channel coupled between the charge-storage area and the floating diffusion region and has a gate tied to a fixed voltage potential. The transfer-storage transistor causes the image charge to transfer from the photosensitive region to the charge-storage area and to transfer from the charge-storage area to the floating diffusion region.Type: ApplicationFiled: August 30, 2012Publication date: March 6, 2014Applicant: OMNIVISION TECHNOLOGIES, INC.Inventors: Sohei Manabe, Jeong-Ho Lyu
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Patent number: 8642374Abstract: An image sensor is described in which the imaging pixels have reduced noise by blocking nitridation in selected areas. In one example, a method includes forming a first and second gate oxide layer over a substrate, forming a layer of photoresist over the first gate oxide layer, applying nitridation to the photoresist and the second gate oxide layer such that the first gate oxide layer is protected from the nitridation by the photoresist, and forming a polysilicon gate over the first and second gate oxide layers.Type: GrantFiled: September 7, 2011Date of Patent: February 4, 2014Assignee: OmniVision Technologies, Inc.Inventors: Jeong-Ho Lyu, Sohei Manabe, Howard Rhodes
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Publication number: 20140027827Abstract: Pixel array structures to provide a ground contact for a CMOS pixel cell. In an embodiment, an active area of a pixel cell includes a photodiode disposed in a first portion of an active area, where a second portion of the active area extends from a side of the first portion. The second portion includes a doped region to provide a ground contact for the active area. In another embodiment, the pixel cell includes a transistor to transfer the charge from the photodiode, where a gate of the transistor is adjacent to the second portion and overlaps the side of the first portion.Type: ApplicationFiled: July 25, 2012Publication date: January 30, 2014Applicant: OMNIVISION TECHNOLOGIES, INC.Inventors: Sohei Manabe, Jeong-Ho Lyu