Abstract: An apparatus and a method for generating haptic feedback and a portable device having the apparatus are provided. The haptic feedback generator changes the property of a magneto-rheological fluid or an electro-rheological fluid using a magnetic field or an electric field and transmits haptic feedback using the property variation. The haptic feedback generator includes a controller 620 outputting a control signal for providing a haptic feedback based on application information selected by a user and a haptic feedback generating unit 610 generating the haptic feedback based on the control signal and providing the haptic feedback in response to an external force Fin of the user.

Abstract: A method of analyzing defects arising from a plurality of photoresist-based layers formed on top of a color filter array in an image sensor is provided. The method comprises the steps of: providing a sample wafer on a passivation layer on a substrate fabricated by a predetermined process, wherein the sample array comprises, sequentially layered, a color filter array, an overcoating layer and a micro-lens, each of which is made of photoresist material; immersing the sample wafer in a hydrofluoric acid solution to etch the passivation layer and expose the back side of the color filter array; and observing defects arising from the photoresist-based layers in the back side of the color filter array.

Abstract: A method of enabling analysis of defects of a semiconductor with three dimensions includes the steps of: coating a photoresist film on the passivation layer except a predetermined portion of the passivation layer including a portion where the defects exist; coating a vinyl film on the photoresist film and on the side of the wafer; removing the passivation layer on the second metal interconnect; and removing an insulating layer formed between two metal interconnects using a selective wet etching. The defects existing in the metal interconnects remaining after etching of the passivation layer and insulating layer are thereby observable, e.g., with a scanning electron microscope or equivalent, the wafer being set on a holder of the scanning electron microscope and being changed in tilt and rotational angles whereby the analysis is enabled.

Abstract: A method of fabricating a specimen for the observation and analysis of defects in a wafer includes the steps of: locating a position of a defect which exists in a patterned layer of a wafer on which a semiconductor device is formed; forming a photoresist layer on an outer side of the patterned layer at the position; drilling the wafer to form a hole from an underlying, outer portion of the wafer to the outer side, i.e., a top portion of the patterned layer where the diameter of the hole formed gradually decreases from the underlying portion to the top portion; and etching the drilled portion to remove the remaining residue.

Abstract: A method of fabricating a specimen for analyzing defects of a semiconductor device is disclosed. The method includes the steps of: cutting a wafer to be adjacent to a defective portion that exists in a patterned layer formed on a substrate; molding the first specimen with a resin; grinding the substrate of the first specimen with a predetermined slope; and etching the ground face to expose the defective layer, wherein the wafer includes a semiconductor substrate and patterned layers where memory devices are formed on the semiconductor substrate.