Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.

Abstract: A memory module includes a command/address (CA) register, memory devices, and a module resistor unit mounted on a circuit board. The centrally disposed CA register drive the memory devices one or more internal CA signal(s) to arrangements of memory devices using multiple CA transmission lines, wherein the multiple internal CA transmission lines are commonly terminated in the module resistor unit.

Abstract: A memory module includes a command/address (CA) register, memory devices, and a module resistor unit mounted on a circuit board. The centrally disposed CA register drive the memory devices one or more internal CA signal(s) to arrangements of memory devices using multiple CA transmission lines, wherein the multiple internal CA transmission lines are commonly terminated in the module resistor unit.

Abstract: A memory module includes a command/address (CA) register, memory devices, and a module resistor unit mounted on a circuit board. The centrally disposed CA register drive the memory devices one or more internal CA signal(s) to arrangements of memory devices using multiple CA transmission lines, wherein the multiple internal CA transmission lines are commonly terminated in the module resistor unit.

Abstract: A memory module includes a command/address (CA) register, memory devices, and a module resistor unit mounted on a circuit board. The centrally disposed CA register drive the memory devices one or more internal CA signal(s) to arrangements of memory devices using multiple CA transmission lines, wherein the multiple internal CA transmission lines are commonly terminated in the module resistor unit.

Abstract: A method for manufacturing an alloy wheel for automobiles, the alloy wheel including a rim part having a portion running in and out from a rim flange to a drop center, and a disc part fitted in the rim part is disclosed. The method comprising forging of an alloy billet to obtain a cup-shaped preform, flowforming of the preform to obtain a seamless tube, cutting of the seamless tube into unit tubes, primary roll forming of the unit tube to obtain a preliminarily shaped unit tube, secondary roll forming of the preliminarily shaped unit to obtain a final shaped rim part, and attaching a disc part to the rim part.

Abstract: A method for manufacturing an alloy wheel for automobiles, the alloy wheel including a rim part having a portion running in and out from a rim flange to a drop center, and a disc part fitted in the rim part is disclosed. The method comprising forging of an alloy billet to obtain a cup-shaped preform, flowforming of the preform to obtain a seamless tube, cutting of the seamless tube into unit tubes, primary roll forming of the unit tube to obtain a preliminarily shaped unit tube, secondary roll forming of the preliminarily shaped unit to obtain a final shaped rim part, and attaching a disc part to the rim part.