Patents by Inventor Jeong-Hun Heo
Jeong-Hun Heo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10319882Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.Type: GrantFiled: January 30, 2018Date of Patent: June 11, 2019Assignee: SEOUL VIOSYS CO., LTD.Inventors: Ki Yon Park, Jeong Hun Heo, Hwa Mok Kim, Gun Woo Han
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Patent number: 10043943Abstract: Disclosed herein is a UV light emitting diode. The UV light emitting diode includes a first conductive type semiconductor layer; a first stress adjustment layer disposed on the first conductive type semiconductor layer, and including a first nitride layer including Al and a second nitride layer disposed on the first nitride layer and having a lower Al composition ratio than the first nitride layer; an active layer disposed on the first stress adjustment layer; and a second conductive type semiconductor layer disposed on the active layer, wherein the first stress adjustment layer includes an Al delta layer inserted in the first nitride layer, and a lower surface of the first nitride layer in which the Al delta layer is inserted has greater average tensile stress than a lower surface of the second nitride layer directly disposed on the first nitride layer.Type: GrantFiled: March 29, 2016Date of Patent: August 7, 2018Assignee: Seoul Viosys Co., Ltd.Inventors: Ki Yon Park, Jeong Hun Heo, Yu Dae Han, Gun Woo Han
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Publication number: 20180175245Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.Type: ApplicationFiled: January 30, 2018Publication date: June 21, 2018Inventors: Ki Yon Park, Jeong Hun Heo, Hwa Mok Kim, Gun Woo Han
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Publication number: 20180090641Abstract: Disclosed herein is a UV light emitting diode. The UV light emitting diode includes a first conductive type semiconductor layer; a first stress adjustment layer disposed on the first conductive type semiconductor layer, and including a first nitride layer including Al and a second nitride layer disposed on the first nitride layer and having a lower Al composition ratio than the first nitride layer; an active layer disposed on the first stress adjustment layer; and a second conductive type semiconductor layer disposed on the active layer, wherein the first stress adjustment layer includes an Al delta layer inserted in the first nitride layer, and a lower surface of the first nitride layer in which the Al delta layer is inserted has greater average tensile stress than a lower surface of the second nitride layer directly disposed on the first nitride layer.Type: ApplicationFiled: March 29, 2016Publication date: March 29, 2018Inventors: Ki Yon Park, Jeong Hun Heo, Yu Dae Han, Gun Woo Han
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Patent number: 9905732Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.Type: GrantFiled: October 14, 2016Date of Patent: February 27, 2018Assignee: Seoul Viosys Co., Ltd.Inventors: Ki Yon Park, Jeong Hun Heo, Hwa Mok Kim, Gun Woo Han
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Patent number: 9882085Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.Type: GrantFiled: February 10, 2016Date of Patent: January 30, 2018Assignee: Seoul Viosys Co., Ltd.Inventors: Jeong Hun Heo, Joo Won Choi, Choong Min Lee, Su Jin Shin, Ki Bum Nam, Yu Dae Han, A Ram Cha Lee
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Publication number: 20170033263Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.Type: ApplicationFiled: October 14, 2016Publication date: February 2, 2017Inventors: Ki Yon Park, Jeong Hun Heo, Hwa Mok Kim, Gun Woo Han
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Patent number: 9543476Abstract: A UV light emitting diode and a method of fabricating the same are provided. The light emitting diode includes an active area between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer, wherein the active area includes a plurality of barrier layers containing Al, a plurality of well layers containing Al and alternately arranged with the barrier layer, and at least one conditioning layer. Each conditioning layer is placed between the well layer and the barrier layer adjacent to the well layer and is formed of a binary nitride semiconductor. The design of the conditioning layer can reduce stress of the active area while allowing uniform control of the composition of the well layers and/or the barrier layers.Type: GrantFiled: November 28, 2014Date of Patent: January 10, 2017Assignee: SEOUL VIOSYS CO., LTD.Inventors: Ki Yon Park, Jeong Hun Heo, Hwa Mok Kim, Chang Suk Han, Hyo Shik Choi
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Patent number: 9537045Abstract: A method of fabricating a semiconductor device includes forming an insulation pattern including a mask region and an open region on a gallium nitride substrate, growing gallium nitride semiconductor layers to cover the insulation pattern, and patterning the semiconductor layers to form a plurality of semiconductor stacks separated from each other, the plurality of semiconductor stacks being electrically isolated from the gallium nitride substrate by the insulation pattern.Type: GrantFiled: July 10, 2015Date of Patent: January 3, 2017Assignee: Seoul Viosys Co., Ltd.Inventors: Jeong Hun Heo, Yeo Jin Yoon, Joo Won Choi, Joon Hee Lee, Chang Yeon Kim, Su Young Lee
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Patent number: 9514926Abstract: Embodiments of the disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.Type: GrantFiled: May 4, 2015Date of Patent: December 6, 2016Assignee: SEOUL VIOSYS CO., LTD.Inventors: Su Youn Hong, Joo Won Choi, Jeong Hun Heo, Su Jin Shin, Choong Min Lee
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Patent number: 9496455Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.Type: GrantFiled: July 27, 2015Date of Patent: November 15, 2016Assignee: SEOUL VIOSYS CO., LTD.Inventors: Ki Yon Park, Jeong Hun Heo, Hwa Mok Kim, Gun Woo Han
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Patent number: 9450141Abstract: Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures.Type: GrantFiled: August 1, 2013Date of Patent: September 20, 2016Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jeong Hun Heo, Joo Won Choi, Choong Min Lee, Young Wug Kim, Su Jin Shin, Su Youn Hong
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Publication number: 20160172539Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.Type: ApplicationFiled: February 10, 2016Publication date: June 16, 2016Inventors: Jeong Hun Heo, Joo Won Choi, Choong Min Lee, Su Jin Shin, Ki Bum Nam, Yu Dae Han, A Ram Cha Lee
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Patent number: 9263255Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.Type: GrantFiled: March 19, 2013Date of Patent: February 16, 2016Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jeong Hun Heo, Joo Won Choi, Choong Min Lee, Su Jin Shin, Ki Bum Nam, Yu Dae Han, A Ram Cha Lee
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Publication number: 20160027964Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.Type: ApplicationFiled: July 27, 2015Publication date: January 28, 2016Inventors: Ki Yon Park, Jeong Hun Heo, Hwa Mok Kim, Gun Woo Han
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Publication number: 20150380236Abstract: Embodiments of the disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.Type: ApplicationFiled: May 4, 2015Publication date: December 31, 2015Inventors: Su Youn Hong, Joo Won Choi, Jeong Hun Heo, Su Jin Shin, Choong Min Lee
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Publication number: 20150318436Abstract: Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures.Type: ApplicationFiled: August 1, 2013Publication date: November 5, 2015Applicant: Seoul Viosys Co., Ltd.Inventors: Jeong Hun Heo, Joo Won Choi, Choong Min Lee, Young Wug Kim, Su Jin Shin, Su Youn Hong
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Publication number: 20150311384Abstract: A method of fabricating a semiconductor device includes forming an insulation pattern including a mask region and an open region on a gallium nitride substrate, growing gallium nitride semiconductor layers to cover the insulation pattern, and patterning the semiconductor layers to form a plurality of semiconductor stacks separated from each other, the plurality of semiconductor stacks being electrically isolated from the gallium nitride substrate by the insulation pattern.Type: ApplicationFiled: July 10, 2015Publication date: October 29, 2015Inventors: Jeong Hun HEO, Yeo Jin Yoon, Joo Won Choi, Joon Hee Lee, Chang Yeon Kim, Su Young Lee
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Patent number: 9111840Abstract: Exemplary embodiments of the present invention disclose a semiconductor device and a method of fabricating the same. The semiconductor device includes a gallium nitride substrate, a plurality of semiconductor stacks disposed on the gallium nitride substrate, and an insulation pattern disposed between the gallium nitride substrate and the plurality of semiconductor stacks, the insulation pattern insulating the semiconductor stacks from the gallium nitride substrate.Type: GrantFiled: October 14, 2013Date of Patent: August 18, 2015Assignee: Seoul Viosys Co., Ltd.Inventors: Jeong Hun Heo, Yeo Jin Yoon, Joo Won Choi, Joon Hee Lee, Chang Yeon Kim, Su Young Lee
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Patent number: 9048086Abstract: Exemplary embodiments of the present disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.Type: GrantFiled: April 29, 2014Date of Patent: June 2, 2015Assignee: Seoul Viosys Co., Ltd.Inventors: Su Youn Hong, Joo Won Choi, Jeong Hun Heo, Su Jin Shin, Choong Min Lee