Abstract: A method of preparing an acrylonitrile butadiene styrene (ABS) sheet includes: a first step of hydrophilizing the surface of an ABS substrate by coating a surfactant solution on the substrate; a second step of washing the surfactant-coated ABS substrate with distilled water and drying the surfactant-coated ABS substrate; a third step of forming an intermediate film by coating poly(3,4-ethylenedioxythiophen)-polystyrene sulfonate (PEDOT-PSS) on top of the dried ABS substrate; and a fourth step of coating a fluorinated polymer solution of poly(vinylidene fluoride-trifluoroethylene) on top of the intermediate film.

Abstract: A high gloss acrylonitrile butadiene styrene (ABS) sheet includes an ABS substrate, an intermediate film of poly(3,4-ethylenedioxythiophen)-polystyrene sulfonate formed on top of the ABS substrate, and a fluorinated resin film of poly(vinylidene fluoride-trifluoroethylene) formed on top of the intermediate film. A method of preparing the high gloss ABS sheet is also disclosed.

Abstract: A high gloss acrylonitrile butadiene styrene (ABS) sheet includes an ABS substrate, an intermediate film of poly(3,4-ethylenedioxythiophen)-polystyrene sulfonate formed on top of the ABS substrate, and a fluorinated resin film of poly(vinylidene fluoride-trifluoroethylene) formed on top of the intermediate film. A method of preparing the high gloss ABS sheet is also disclosed.

Abstract: A high gloss acrylonitrile butadiene styrene (ABS) sheet includes an ABS substrate, an intermediate film of poly(3,4-ethylenedioxythiophen)-polystyrene sulfonate formed on top of the ABS substrate, and a fluorinated resin film of poly(vinylidene fluoride-trifluoroethylene) formed on top of the intermediate film. A method of preparing the high gloss ABS sheet is also disclosed.

Abstract: The present invention relates to a quantum dot light emitting element which can form a quantum light emitting layer configured of charge transporting particles and quantum dots and a charge transporting layer in a solution process, to reduce process expense, and a method for manufacturing the same. The quantum dot light emitting element includes a substrate, an anode formed on the substrate, a quantum light emitting layer formed on the anode, the quantum light emitting layer having charge transporting particles and quantum dots mixed therein, and a cathode formed on the quantum light emitting layer.

Abstract: The present invention relates to a quantum dot light emitting diode device in which a hole transportation layer is formed after forming a quantum dot light emitting layer by a solution process by applying an inverted type quantum dot light emitting diode device for making free selection of a hole transportation layer material that enables easy injection of a hole to the quantum dot light emitting layer; and display device and method therewith.

Abstract: A carbazole compound represented by Formula 1: wherein X1, X2 and X3 are each independently selected from the group consisting of a hydrogen atom, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C1-C20 alkoxy group, a substituted or unsubstituted C6-C30 aryl group, a substituted or unsubstituted C6-C30 arylalkyl group, a substituted or unsubstituted C2-C30 heteroaryl group, a substituted or unsubstituted C3-C20 cycloalkyl group and a substituted or unsubstituted C5-C30 heterocycloalkyl group; and l, m and n are each independently an integer from 0 to 5.

Abstract: The present invention relates to a quantum dot light emitting diode device in which a hole transportation layer is formed after forming a quantum dot light emitting layer by a solution process by applying an inverted type quantum dot light emitting diode device for making free selection of a hole transportation layer material that enables easy injection of a hole to the quantum dot light emitting layer; and display device and method therewith.

Abstract: The present invention relates to a quantum dot light emitting element which can form a quantum light emitting layer configured of charge transporting particles and quantum dots and a charge transporting layer in a solution process, to reduce process expense, and a method for manufacturing the same. The quantum dot light emitting element includes a substrate, an anode formed on the substrate, a quantum light emitting layer formed on the anode, the quantum light emitting layer having charge transporting particles and quantum dots mixed therein, and a cathode formed on the quantum light emitting layer.

Abstract: A carbazole compound represented by Formula 1: wherein X1, X2 and X3 are each independently selected from the group consisting of a hydrogen atom, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C1-C20 alkoxy group, a substituted or unsubstituted C6-C30 aryl group, a substituted or unsubstituted C6-C30 arylalkyl group, a substituted or unsubstituted C2-C30 heteroaryl group, a substituted or unsubstituted C3-C20 cycloalkyl group and a substituted or unsubstituted C5-C30 heterocycloalkyl group; and l, m and n are each independently an integer from 0 to 5.

Abstract: An organic semiconductor compound based on a 2,7-bis-(vinyl)[1]benzothieno[3,2-b]benzothiophene backbone, an organic semiconductor thin film, an organic thin film transistor and methods of forming the same are provided, the organic semiconductor compound including a vinyl group derived from a phosphonate derivative represented by Formula 1 and an aldehyde derivative represented by Formula 2 below: