Abstract: Embodiments of the present disclosure disclose a thin film transistor, a fabrication method thereof, a repair method thereof, and an array substrate. The thin film transistor comprises a gate electrode (12), a gate insulating layer (13), an active layer (14), a source electrode (16) and a drain electrode (17). The source electrode (16) comprises a first source electrode portion (161) and a second source electrode portion (162) independent from each other, the first source electrode portion (161) and the second source electrode portion (162) are electrically connected with the active layer (14), respectively; and/or, the drain electrode (17) comprises a first drain electrode portion (171) and a second drain electrode portion (172) independent from each other, the first drain electrode portion (171) and the second drain electrode portion (172) are electrically connected with the active layer (14), respectively.

Abstract: Disclosed is a method for manufacturing an array substrate, the array substrate and a display device which can reduce manufacturing steps of a color filter process and further reduce manufacturing steps of the display device, thereby saving manufacturing cost and time. The method for manufacturing the array substrate includes: forming a thin film transistor on a base substrate; forming a passivation layer having a via hole on a front side of the thin film transistor and forming a photo spacer on a front side of the passivation layer through a halftone mask patterning process. With this method for manufacturing the array substrate, there is no need to prepare the photo spacer on a back side of the color filter substrate. Therefore, it is possible to reduce manufacturing steps of a color filter process, which in turn further reduces manufacturing steps of the display device, thereby saving manufacturing cost and time.

Abstract: Disclosed is a method for manufacturing an array substrate, the array substrate and a display device which can reduce manufacturing steps of a color filter process and further reduce manufacturing steps of the display device, thereby saving manufacturing cost and time. The method for manufacturing the array substrate includes: forming a thin film transistor on a base substrate; forming a passivation layer having a via hole on a front side of the thin film transistor and forming a photo spacer on a front side of the passivation layer through a halftone mask patterning process. With this method for manufacturing the array substrate, there is no need to prepare the photo spacer on a back side of the color filter substrate. Therefore, it is possible to reduce manufacturing steps of a color filter process, which in turn further reduces manufacturing steps of the display device, thereby saving manufacturing cost and time.

Abstract: An embodiment of the invention relates to a TFT-LCD array substrate comprising a substrate, a gate line and a data line formed on the substrate, a pixel electrode and a thin film transistor formed in a pixel region defined by the gate line and the data line, wherein the thin film transistor comprises a gate electrode, a source electrode, and a transparent drain electrode, and the transparent drain electrode is electrically connected with the pixel electrode.

Abstract: Embodiments of the present disclosure disclose a thin film transistor, a fabrication method thereof, a repair method thereof, and an array substrate. The thin film transistor comprises a gate electrode (12), a gate insulating layer (13), an active layer (14), a source electrode (16) and a drain electrode (17). The source electrode (16) comprises a first source electrode portion (161) and a second source electrode portion (162) independent from each other, the first source electrode portion (161) and the second source electrode portion (162) are electrically connected with the active layer (14), respectively; and/or, the drain electrode (17) comprises a first drain electrode portion (171) and a second drain electrode portion (172) independent from each other, the first drain electrode portion (171) and the second drain electrode portion (172) are electrically connected with the active layer (14), respectively.

Abstract: A thin-film transistor (TFT) comprises a gate electrode, a gate insulating layer, a source electrode and a drain electrode which are formed on a base substrate, the source electrode and the drain electrode are disposed on different layers and isolated from each other through a semiconductor connecting section made of an oxide semiconductor material; a position of the semiconductor connecting section corresponds to a position of the gate electrode; and at least one part of the source electrode and at least one part of the drain electrode overlap each other at a position corresponding to the semiconductor connecting section. A display device comprising the TFT and a display device comprising the display device are also disclosed.

Abstract: An embodiment of the invention relates to a TFT-LCD array substrate comprising a substrate, a gate line and a data line formed on the substrate, a pixel electrode and a thin film transistor formed in a pixel region defined by the gate line and the data line, wherein the thin film transistor comprises a gate electrode, a source electrode, and a transparent drain electrode, and the transparent drain electrode is electrically connected with the pixel electrode.

Abstract: A Thin Film Transistor-Liquid Crystal Display (TFT-LCD) array substrate is presented which includes a gate line, a data line, and a pixel electrode. The pixel electrode is disposed in a pixel region defined by the intersection between the gate line and the data line. In the pixel region, a partition groove for forming a pixel electrode pattern is provided at the periphery of the pixel electrode.

Abstract: An embodiment of the invention relates to a TFT-LCD array substrate comprising a substrate, a gate line and a data line formed on the substrate, a pixel electrode and a thin film transistor formed in a pixel region defined by the gate line and the data line, wherein the thin film transistor comprises a gate electrode, a source electrode, and a transparent drain electrode, and the transparent drain electrode is electrically connected with the pixel electrode.

Abstract: A thin-film transistor (TFT) comprises a gate electrode, a gate insulating layer, a source electrode and a drain electrode which are formed on a base substrate, the source electrode and the drain electrode are disposed on different layers and isolated from each other through a semiconductor connecting section made of an oxide semiconductor material; a position of the semiconductor connecting section corresponds to a position of the gate electrode; and at least one part of the source electrode and at least one part of the drain electrode overlap each other at a position corresponding to the semiconductor connecting section. A display device comprising the TFT and a display device comprising the display device are also disclosed.

Abstract: A TFT-LCD array substrate and a manufacturing method thereof. The array substrate comprises a gate line, a data line, and a pixel electrode, and the pixel electrode is disposed in a pixel region defined by the intersection between the gate line and the data line. In the pixel region, a partition groove for forming a pixel electrode pattern is provided at the periphery of the pixel electrode. This structure is helpful to form a pixel electrode pattern by a lift-off process, which significantly reduces the production cost and improves the production yield.

Abstract: A method of forming a photoresist burr edge and a method of manufacturing an array substrate are provided in the present invention. The method of manufacturing an array substrate comprises: forming a gate line and a gate electrode on a substrate; forming a data line, a source electrode, a drain electrode and a TFT channel region without removing the photoresist on the data line, the source electrode and the drain electrode; depositing a passivation layer; removing the remained photoresist and the passivation layer thereon by a lifting-off process; applying a photoresist layer; forming a photoresist burr edge of peak shape; depositing a transparent conductive film; forming a pixel electrode by a lifting-off process, wherein the pixel electrode is directly connected with the drain electrode.

Abstract: An embodiment of the invention relates to a TFT-LCD array substrate comprising a substrate, a gate line and a data line formed on the substrate, a pixel electrode and a thin film transistor formed in a pixel region defined by the gate line and the data line, wherein the thin film transistor comprises a gate electrode, a source electrode, and a transparent drain electrode, and the transparent drain electrode is electrically connected with the pixel electrode.

Abstract: A method of forming a photoresist burr edge and a method of manufacturing an array substrate are provided in the present invention. The method of manufacturing an array substrate comprises: forming a gate line and a gate electrode on a substrate; forming a data line, a source electrode, a drain electrode and a TFT channel region without removing the photoresist on the data line, the source electrode and the drain electrode; depositing a passivation layer; removing the remained photoresist and the passivation layer thereon by a lifting-off process; applying a photoresist layer; forming a photoresist burr edge of peak shape; depositing a transparent conductive film; forming a pixel electrode by a lifting-off process, wherein the pixel electrode is directly connected with the drain electrode.

Abstract: A TFT-LCD array substrate and a manufacturing method thereof. The array substrate comprises a gate line, a data line, and a pixel electrode, and the pixel electrode is disposed in a pixel region defined by the intersection between the gate line and the data line. In the pixel region, a partition groove for forming a pixel electrode pattern is provided at the periphery of the pixel electrode. This structure is helpful to form a pixel electrode pattern by a lift-off process, which significantly reduces the production cost and improves the production yield.

Abstract: A method of manufacturing a TFT-LCD which can prevent damage due to a mask process and reduce cost by minimizing mask process number, is disclosed. A three-mask process is required for fabricating a TFT-LCD in the present invention. Firstly, on a transparent insulating substrate are formed a semiconductor layer, a doped semiconductor layer and a first metal layer, sequentially. The first metal layer is then etched using a first mask, to form source and drain electrodes spaced to a selected distance. Next, the doped semiconductor layer is etched using the source and drain electrodes as an etch mask, to form ohmic layers under the source and drain electrodes. A gate insulating layer and a second metal layer are then formed on the overall substrate, in sequence. Thereafter, the second metal layer is etched using a second mask, to form a gate electrode overlapped with the insides of the source and drain electrodes.