Patents by Inventor Jeong Hwan Han

Jeong Hwan Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11925920
    Abstract: The present invention relates to a catalyst for hydrogenation of an aromatic compound, which is capable of greatly reducing the inactivation of a catalyst by using a support including a magnesium-based spinel structure, and a preparation method therefor.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: March 12, 2024
    Assignee: HANWHA CHEMICAL CORPORATION
    Inventors: Eung Gyu Kim, Won Yong Kim, Jeong Hwan Chun, Young Jin Cho, Joung Woo Han, Hyo Suk Kim, Wan Jae Myeong, Ki Taeg Jung
  • Publication number: 20240067770
    Abstract: A polythiol composition according to exemplary embodiments includes: a polythiol-based compound; and a benzyl halide-based reaction regulator in an amount of 10 ppm to 2,000 ppm based on a weight of the polythiol-based compound. The reaction rate of the polythiol-based compound and an isocyanate-based compound may be controlled through the reaction regulator to inhibit a generation of stria phenomenon.
    Type: Application
    Filed: September 2, 2021
    Publication date: February 29, 2024
    Inventors: Jae Young PAI, Jung Hwan MYUNG, Jeong Moo KIM, Hyuk Hee HAN, Kyeong Hwan YOU
  • Patent number: 10858379
    Abstract: A novel metal precursor having improved thermal stability and volatility is provided. Also provided herein are: a method for readily manufacturing a good quality metal oxide thin film at an excellent growth rate at low temperature by using the metal precursor; and a thin film manufactured by using the same.
    Type: Grant
    Filed: October 11, 2016
    Date of Patent: December 8, 2020
    Assignee: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY
    Inventors: Bo Keun Park, Taek-Mo Chung, Dong Ju Jeon, Jeong Hwan Han, Ji Hyeun Nam, Chang Gyoun Kim, Eun Ae Jung
  • Patent number: 10770139
    Abstract: There are provided a variable resistance memory device and an operating method thereof. In a method for operating a variable resistance memory device, the method includes programming multi-bit data in a multi-bit variable resistance memory cell of the variable resistance memory device, wherein the programming includes: generating sequentially increased program voltage pulses, based on the multi-bit data; and applying the program voltage pulses to the multi-bit variable resistance memory cell, wherein a current-voltage curve of the multi-bit variable resistance memory cell exhibits a self-compliance characteristic, wherein the program voltage pulses are included in a voltage section having the self-compliance characteristic.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: September 8, 2020
    Assignee: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY
    Inventors: Gun Hwan Kim, Young Kuk Lee, Taek Mo Chung, Bo Keun Park, Jeong Hwan Han, Ji Woon Choi
  • Publication number: 20180342297
    Abstract: There are provided a variable resistance memory device and an operating method thereof. In a method for operating a variable resistance memory device, the method includes programming multi-bit data in a multi-bit variable resistance memory cell of the variable resistance memory device, wherein the programming includes: generating sequentially increased program voltage pulses, based on the multi-bit data; and applying the program voltage pulses to the multi-bit variable resistance memory cell, wherein a current-voltage curve of the multi-bit variable resistance memory cell exhibits a self-compliance characteristic, wherein the program voltage pulses are included in a voltage section having the self-compliance characteristic.
    Type: Application
    Filed: May 1, 2018
    Publication date: November 29, 2018
    Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY
    Inventors: Gun Hwan KIM, Young Kuk LEE, Taek Mo CHUNG, Bo Keun PARK, Jeong Hwan HAN, Ji Woon CHOI
  • Publication number: 20180334471
    Abstract: The present invention relates to a novel metal precursor having improved thermal stability and volatility and can provide: a method for readily manufacturing a good quality metal oxide thin film at an excellent growth rate at low temperature by using the metal precursor; and a thin film manufactured by using the same.
    Type: Application
    Filed: October 11, 2016
    Publication date: November 22, 2018
    Inventors: Bo Keun PARK, Taek-Mo CHUNG, Dong Ju JEON, Jeong Hwan HAN, Ji Hyeun NAM, Chang Gyoun KIM, Eun Ae JUNG
  • Patent number: 8805097
    Abstract: Disclosed is a three-dimensional (3D) mesh compression apparatus and method. The 3D mesh compression apparatus may generate a base mesh through a mesh simplification, may separately compress the base mesh and vertices eliminated by the simplification, may construct a covariance matrix based on a topological distance between the eliminated vertices, and may compress 3D mesh data based on the covariance matrix.
    Type: Grant
    Filed: October 15, 2010
    Date of Patent: August 12, 2014
    Assignees: Samsung Electronics Co., Ltd., Korea University Industrial & Academic Collaboration Foundation
    Inventors: Min Su Ahn, Jeong Hwan Han, Jae Kyun Ahn, Dae Youn Lee, Chang Su Kim