Patents by Inventor Jeong Hwan JEONG

Jeong Hwan JEONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CMP slurry composition for polishing copper line and polishing method using same
    Patent number: 10607853
    Abstract: The present invention relates to a CMP slurry composition for polishing a copper line, the CMP slurry composition comprising a colloidal silica, an oxidizing agent, a complexing agent, a corrosion inhibitor, a pH regulator, and ultrapure water. The colloidal silica has a specific surface area (BET) of 72.9 to 88.5 m2/g, and 0.1 to 2 wt % of the colloidal silica is included in the CMP slurry composition. The CMP slurry composition has an excellent copper line polishing rate, has a low number of defects and minimizes scratches after polishing, and can minimize dishing.
    Type: Grant
    Filed: October 12, 2015
    Date of Patent: March 31, 2020
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jong Il Noh, Dong Hun Kang, Jeong Hwan Jeong, Young Nam Choi
  • CMP slurry composition for polishing copper and polishing method using the same
    Patent number: 10150890
    Abstract: Disclosed herein is a CMP slurry composition for polishing copper. The CMP slurry composition includes: polishing particles; and deionized water, wherein the polishing particles include inorganic particles and organic particles, and both the inorganic particles and the organic particles have a positive zeta potential. A polishing method comprising polishing a copper wire using the CMP slurry composition also be provided.
    Type: Grant
    Filed: December 7, 2015
    Date of Patent: December 11, 2018
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Jeong Hwan Jeong, Young Chul Jung, Dong Hun Kang, Tae Wan Kim, Jong Il Noh, Chang Ki Hong
  • CMP SLURRY COMPOSITION FOR POLISHING COPPER AND POLISHING METHOD USING THE SAME
    Publication number: 20170335139
    Abstract: Disclosed herein is a CMP slurry composition for polishing copper. The CMP slurry composition includes: polishing particles; and deionized water, wherein the polishing particles include inorganic particles and organic particles, and both the inorganic particles and the organic particles have a positive zeta potential. A polishing method comprising polishing a copper wire using the CMP slurry composition also be provided.
    Type: Application
    Filed: December 7, 2015
    Publication date: November 23, 2017
    Inventors: Jeong Hwan JEONG, Young Chul JUNG, Dong Hun KANG, Tae Wan KIM, Jong IL NOH, Chang Ki HONG
  • CMP SLURRY COMPOSITION FOR POLISHING COPPER LINE AND POLISHING METHOD USING SAME
    Publication number: 20170271172
    Abstract: The present invention relates to a CMP slurry composition for polishing a copper line, the CMP slurry composition comprising a colloidal silica, an oxidizing agent, a complexing agent, a corrosion inhibitor, a pH regulator, and ultrapure water. The colloidal silica has a specific surface area (BET) of 72.9 to 88.5 m2/g, and 0.1 to 2 wt % of the colloidal silica is included in the CMP slurry composition. The CMP slurry composition has an excellent copper line polishing rate, has a low number of defects and minimizes scratches after polishing, and can minimize dishing.
    Type: Application
    Filed: October 12, 2015
    Publication date: September 21, 2017
    Inventors: Jong IL NOH, Dong Hun KANG, Jeong Hwan JEONG, Young Nam CHOI
  • CMP slurry composition for polishing copper, and polishing method using same
    Patent number: 9593260
    Abstract: The present invention relates to a CMP slurry composition for polishing copper, comprising: polishing particles; a complexing agent; a corrosion inhibitor; and deionized water. The complexing agent comprises one or more organic acids selected from oxalic acid, malic acid, malonic acid, and formic acid, and glycine.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: March 14, 2017
    Assignee: CHEIL INDUSTRIES, INC.
    Inventors: Jong Il Noh, Dong Hun Kang, Tae Wan Kim, Jeong Hwan Jeong, Young Nam Choi, Chang Ki Hong
  • CMP SLURRY COMPOSITION FOR POLISHING COPPER, AND POLISHING METHOD USING SAME
    Publication number: 20160017181
    Abstract: The present invention relates to a CMP slurry composition for polishing copper, comprising: polishing particles; a complexing agent; a corrosion inhibitor; and deionized water. The complexing agent comprises one or more organic acids selected from oxalic acid, malic acid, malonic acid, and formic acid, and glycine.
    Type: Application
    Filed: June 21, 2013
    Publication date: January 21, 2016
    Inventors: Jong Il NOH, Dong Hun KANG, Tae Wan KIM, Jeong Hwan JEONG, Young Nam CHOI, Chang Ki HONG