Abstract: Provided is an optical system which may acquire a hyperspectral image by acquiring a spectral image of an object to be measured, which includes, to collect spectral data and train the neural network, an image forming part forming an image from an object to be measured and transmitting collimated light, a slit moving to scan the incident image and passing and outputting a part of the formed image, and a first optical part obtaining spectral data by splitting light of the image received through the slit by wavelength. Also, the system includes, to decompose overlapped spectral data and to infer hyperspectral image data through the trained neural network, an image forming part forming an image from an object to be measured and transmitting collimated light, and a first optical part obtaining spectral data by splitting light of the received image by wavelength.

Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure shows high luminous efficiency and good lifespan by comprising a specific combination of the plural kinds of host compounds and a specific hole transport compound.

Abstract: A battery module minimizes damage to internal configurations generated in an assembly process. The battery module includes a cell assembly provided with an electrode lead and a plurality of secondary batteries stacked; a bus bar assembly provided with a bus bar frame located on a front or rear of the cell assembly, and a bus bar mounted on an outer surface of the bus bar frame; and an inner cover provided with a plate portion located on an outer side of the cell assembly, formed in a plate shape and formed with a chamfer on an outer peripheral portion and a coupling portion coupled to one end portion of the body portion of the bus bar frame on a part of the outer peripheral portion of the plate portion.

Abstract: A semiconductor design optimization system that includes: a data base configured to store design data, a training data preprocessing unit configured to preprocess the design data and generate training data, a data learning unit configured to generate a physical property prediction model by training using the training data, a physical property prediction unit configured to generate predicted physical property data including information associated with predicted physical property values for each region of a semiconductor device to be fabricated, wherein the physical property prediction unit is configured to input, into the physical property prediction model, input data including information associated with design drawings of the semiconductor device to be fabricated, and a layout generator configured generate a design layout optimized to distribute the predicted physical property values for each region of the semiconductor device to be fabricated by modifying the design drawings based on the predicted physical

Abstract: A display includes: a display panel; and a panel bottom sheet disposed below the display panel, the panel bottom sheet including: a first heat dissipation layer; a second heat dissipation layer over the first heat dissipation layer, including a first opening formed completely through the second heat dissipation layer in a thickness direction; a heat dissipation coupling interlayer between the first heat dissipation layer and the second heat dissipation layer, and a heat dissipation substrate on the second heat dissipation layer.

Abstract: A power control device configured for diagnosing an open-circuit fault occurring in a power system of an autonomous vehicle and an open-circuit diagnosis method thereof, may include a power control switch that selectively connects or separates main power output from the first power supply and auxiliary power output from the second power supply, and a processor that determines a possibility of an open-circuit fault of a vehicle power source based on a current flowing through the power control switch and determines whether it is possible to drive an electric load with an output power of the second power supply alone and determine an open-circuit position based on an output of the first power supply when there is the possibility of the open-circuit fault.

Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure shows high luminous efficiency and good lifespan by comprising a specific combination of the plural kinds of host compounds and a specific hole transport compound.

Abstract: A method for manufacturing a display device includes providing a donor substrate including a first base substrate and an organic material layer disposed on the first base substrate, etching the organic material layer to form an etched organic material layer using a laser device, providing a display substrate including a second base substrate and a plurality of first electrodes disposed on the second base substrate, aligning the donor substrate and the display substrate such that the etched organic material layer faces the plurality of first electrodes, and transferring the etched organic material layer to the display substrate using an energy generation device.

Abstract: A medical headgear includes an ultrasound transducer and a headgear. The ultrasound transducer is configured to generate a low intensity ultrasound. The headgear supports the ultrasound transducer. The headgear includes a rear portion case including a slide guide configured to support an occipital and a support pad configured to support a crown. The headgear further includes a front portion case connected to the rear portion case to be slidably movable in one direction. The front portion case includes two temporal support pads configured to support both temporal portions.

Abstract: Provided are a novel metal triamine compound, a method for preparing the same, a composition for depositing a metal-containing thin film including the same, and a method for preparing a metal-containing thin film using the same. The metal triamine compound of the present invention has excellent reactivity, is thermally stable, has high volatility, and has high storage stability, and thus, it may be used as a metal-containing precursor to easily prepare a high-purity metal-containing thin film having high density.

Abstract: Provided are an exposure apparatus including a light source unit which provides light for exposure and comprises micro light emitting diodes arranged in a matrix form; a substrate transfer unit which transfers a target substrate; and a control unit which controls at least one of the light source unit and the substrate transfer unit. The control unit allocates coordinates or an address to each micro light emitting diode and individually controls an amount of light of each micro light emitting diode according to a preset pattern based on the coordinates or the address.

Abstract: Provided are a novel metal triamine compound, a method for preparing the same, a composition for depositing a metal-containing thin film including the same, and a method for preparing a metal-containing thin film using the same. The metal triamine compound of the present invention has excellent reactivity, is thermally stable, has high volatility, and has high storage stability, and thus, it may be used as a metal-containing precursor to easily prepare a high-purity metal-containing thin film having high density.

Abstract: Disclosure relates to sewing machine capable of preventing thread cutting or deterioration caused by interference between leading end of needle and upper thread, that includes: head frame; needle bar supported on head frame to be movable up and down; needle having needle hole that penetrates in transverse direction with respect to axial line and has upper thread inserted thereinto and be coupled to lower end of needle bar to move up and down between lowered stitching position and lifted needle position; and presser foot unit having pressing part that is provided with needle guide hole through which needle passes and moves up and down between downward pressing height position where pressing part presses sewing material and lifting release height position where pressing part is lifted and spaced apart from sewing material and pressing foot arm that supports pressing part.

Abstract: A semiconductor device includes a first transistor, a second transistor, and a third transistor. The first transistor includes a first gate insulator, a first source region and a first drain region, a pair of lightly doped drain (LDD) regions that are each shallower than the first source region and the first drain region, and a first gate electrode. The second transistor includes a second gate insulator, a second source region and a second drain region, a pair of drift regions that encompass the second source region and the second drain region respectively, and a second gate electrode, and the third transistor comprises a third gate insulator, a third source region and a third drain region, and a pair of drift regions that encompass the third source and the third drain regions respectively, and a third gate electrode. The second gate insulator is thinner than the other gate insulators.

Abstract: Provided are a medical headgear which may be worn on a skull of an object while an ultrasound transducer is supported thereby, and the headgear according to an embodiment of the present disclosure may closely adhere and support an ultrasound transducer to the skull of the object regardless of the size and shape of the skull of the object and a position of the brain to which ultrasound needs to be transmitted. According to the medical headgear as described above, the ultrasound transducer supported on the headgear may be moved to a specific position on the skull, regardless of the position of the brain to which ultrasound needs to be transmitted, and thus, the use convenience of a user may be improved.

Abstract: A display driver semiconductor device includes a high voltage well region being formed on a substrate, a first semiconductor device, a second semiconductor device, and a third semiconductor device. The first semiconductor device is formed on the high voltage well region and includes a first gate insulating layer. The second semiconductor device is formed adjacent to the first semiconductor device and includes a second gate insulating layer. The third semiconductor device is formed adjacent to the second semiconductor device and includes a third gate insulating layer. The first insulating layer may be formed using a chemical vapor deposition (CVD) process and the second insulating layer is formed using a thermal oxide process.

Abstract: A semiconductor device includes a first transistor, a second transistor, and a third transistor. The first transistor includes a first gate insulator, a first source region and a first drain region, a pair of lightly doped drain (LDD) regions that are each shallower than the first source region and the first drain region, and a first gate electrode. The second transistor includes a second gate insulator, a second source region and a second drain region, a pair of drift regions that encompass the second source region and the second drain region respectively, and a second gate electrode, and the third transistor comprises a third gate insulator, a third source region and a third drain region, and a pair of drift regions that encompass the third source and the third drain regions respectively, and a third gate electrode. The second gate insulator is thinner than the other gate insulators.

Abstract: A semiconductor device includes a first transistor, a second transistor, and a third transistor. The first transistor includes a first gate insulator, a first source region and a first drain region, a pair of lightly doped drain (LDD) regions that are each shallower than the first source region and the first drain region, and a first gate electrode. The second transistor includes a second gate insulator, a second source region and a second drain region, a pair of drift regions that encompass the second source region and the second drain region respectively, and a second gate electrode, and the third transistor comprises a third gate insulator, a third source region and a third drain region, and a pair of drift regions that encompass the third source and the third drain regions respectively, and a third gate electrode. The second gate insulator is thinner than the other gate insulators.

Abstract: A display driver semiconductor device includes a high voltage well region being formed on a substrate, a first semiconductor device, a second semiconductor device, and a third semiconductor device. The first semiconductor device is formed on the high voltage well region and includes a first gate insulating layer. The second semiconductor device is formed adjacent to the first semiconductor device and includes a second gate insulating layer. The third semiconductor device is formed adjacent to the second semiconductor device and includes a third gate insulating layer. The first insulating layer may be formed using a chemical vapor deposition (CVD) process and the second insulating layer is formed using a thermal oxide process.

Abstract: A display driver semiconductor device includes a high voltage well region being formed on a substrate, a first semiconductor device, a second semiconductor device, and a third semiconductor device. The first semiconductor device is formed on the high voltage well region and includes a first gate insulating layer. The second semiconductor device is formed adjacent to the first semiconductor device and includes a second gate insulating layer. The third semiconductor device is formed adjacent to the second semiconductor device and includes a third gate insulating layer. The first insulating layer may be formed using a chemical vapor deposition (CVD) process and the second insulating layer is formed using a thermal oxide process.