Abstract: Disclosed is a processor which includes a camera image feature extractor that extracts a camera image feature based on a camera image, a LIDAR image feature extractor that extracts a LIDAR image feature based on a LIDAR image, a sampling unit that performs a sampling operation based on the camera image feature and the LIDAR image feature and generates a sampled LIDAR image feature, a fusion unit that fuses the camera image feature and the sampled LIDAR image feature and generates a fusion map, and a decoding unit that decodes the fusion map and generates a depth map. The sampling operation includes back-projecting a pixel location of the camera image feature on a camera coordinate system to generate a back-projection point, and projecting the back-projection point on a plane of the LIDAR image to calculate sampling coordinates.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: An annular ring shaped baffle plate disposed between a process chamber and a vacuum chamber of a dry etching apparatus. A plurality of slits are formed radially along the annular ring and extend from a top surface of the annular ring to a bottom surface of the annular ring. The slits are circumferentially spaced from each other, and each of the slits has an upper section that is tapered and a lower section that has a constant width. Alternatively, the slits may be replaced by a plurality of discharging regions formed in the annular ring, with the discharging regions having a circumferential width that is greater than a radial length.