Abstract: A gas comprising hydrogen is supplied to a plasma source. Plasma comprising hydrogen plasma particles is generated from the gas. A passivation layer is deposited on a first mask layer on a second mask layer over a substrate using the hydrogen plasma particles.

Abstract: Methods for removing residual polymers formed during etching of a boron-doped amorphous carbon layer are provided herein. In some embodiments, a method of etching a feature in a substrate includes: exposing a boron doped amorphous carbon layer disposed on the substrate to a first plasma through a patterned mask layer to etch a feature into the boron doped amorphous carbon layer, wherein the first plasma is formed from a first process gas that reacts with the boron doped amorphous carbon layer to form residual polymers proximate a bottom of the feature; and exposing the residual polymers to a second plasma through the patterned mask layer to etch the residual polymers proximate the bottom of the feature, wherein the second plasma is formed from a second process gas comprising nitrogen (N2), oxygen (O2), hydrogen (H2), and methane (CH4).

Abstract: In one embodiment, a method is proposed for etching a boron dope hardmask layer. The method includes flowing a process gas comprising at least CH4 into a processing chamber. Forming a plasma in the process chamber from the process gas and etching the boron doped hardmask layer in the presence of the plasma. In other embodiments, the process gas utilized to etch the boron doped hardmask layer includes CH4, Cl2, SF6 and O2.

Abstract: Methods for removing residual polymers formed during etching of a boron-doped amorphous carbon layer are provided herein. In some embodiments, a method of etching a feature in a substrate includes: exposing a boron doped amorphous carbon layer disposed on the substrate to a first plasma through a patterned mask layer to etch a feature into the boron doped amorphous carbon layer, wherein the first plasma is formed from a first process gas that reacts with the boron doped amorphous carbon layer to form residual polymers proximate a bottom of the feature; and exposing the residual polymers to a second plasma through the patterned mask layer to etch the residual polymers proximate the bottom of the feature, wherein the second plasma is formed from a second process gas comprising nitrogen (N2), oxygen (O2), hydrogen (H2), and methane (CH4).

Abstract: A gas comprising hydrogen is supplied to a plasma source. Plasma comprising hydrogen plasma particles is generated from the gas. A passivation layer is deposited on a first mask layer on a second mask layer over a substrate using the hydrogen plasma particles.

Abstract: In one embodiment, a method is proposed for etching a boron dope hardmask layer. The method includes flowing a process gas comprising at least CH4 into a processing chamber. Forming a plasma in the process chamber from the process gas and etching the boron doped hardmask layer in the presence of the plasma. In other embodiments, the process gas utilized to etch the boron doped hardmask layer includes CH4, Cl2, SF6 and O2.

Abstract: A method of analyzing a numeric model for a metal hydride tank, which calculates the temperature change and the change of a reaction rate and the hydrogen concentration in the alloy resulting from a hydrogen reaction based on various user conditions with respect to metal hydride (MH) alloy tanks having various shapes when MH alloy tanks are actually used. The method includes (a) inputting a temperature (T), a real reaction flow rate (QR), and an initial data value of hydrogen concentration (C) for each cell of a model, (b) calculating a possible reaction rate (RP) depending on the temperature (T) and the hydrogen concentration (C) in the metal hydride alloy with respect to each cell, (c) calculating a possible flow rate (QP) with respect to an entire MH alloy region, and (d) calculating a k between the real reaction flow rate (QR) and the possible reaction flow rate (QP).

Abstract: Disclosed is a method of calculating a numeric model for interpretation of a metal hydride tank. The best possible simpljfied algorithm is applied through a simple measuring process, thereby calculating a numeric model for various metal hydride tank systems storing hydrogen, so that temperature variation depending on the reaction with hydrogen and the reacted. quantity of the hydrogen. are calculated with respect to the various metal hydride tank systems by calculating only the numeric model. The method. includes (a) charging a metal hydride (MH) alloy in a metal hydride tank system under a preset temperature condition, (b) measuring temperature variation and a reaction rate between MH alloy and hydrogen, and concentration of the hydrogen of the MH alloy by supplying or emitting the hydrogen, and (c) calculating a numeric model for the temperature variation, the reaction rate, and the concentration of the hydrogen based on data measured through step (b).