Abstract: A method of reinforcement learning of a neural network device for generating a verification vector for verifying a circuit design comprising a circuit block includes inputting a test vector to the circuit block, generating one or more rewards based on a coverage corresponding to the test vector, the coverage being determined based on a state transition of the circuit block based on the test vector, and applying the one or more rewards to a reinforcement learning.

Abstract: Disclosed is a radar antenna including an antenna body including a first plate and a second plate; a slot radiation part and a slot reception part formed in the first plate; a transmission port and a reception port formed in the second plate; and a waveguide formed by assembling the first and second plates. The slot radiation part includes a first slot radiation part configured to radiate a radio wave in a first detection range, and a second slot radiation part configured to radiate radio waves in a second detection range having a larger width and distance than the first detection range.

Abstract: Disclosed are a thin film transistor including a source electrode and a drain electrode facing each other, a channel region between the source electrode and the drain electrode, and a gate electrode overlapped with the channel region, wherein the channel region includes a plurality of semiconductor stripes extending in a direction from the source electrode to the drain electrode, a method of manufacturing the same, a thin film transistor array panel, and an electronic device.

Abstract: Disclosed are a coating liquid including polyorganosiloxane represented by Chemical Formula 1, a film obtained therefrom, a stacked structure including the same, a thin film transistor, and an electronic device. (R1R2R3SiO1/2)M1(R4R5SiO2/2)D1(R6SiO3/2)T1(R7SiO3/2)T2(R8SiO3/2)T3(SiO4/2)Q1??[Chemical Formula 1] In Chemical Formula 1, R1 to R8, M1, D1, T1 to T3, and Q1 are the same as defined in the detailed description.

Abstract: Disclosed are an organic thin film includes a first compound represented by one of Chemical Formula 1A and 1B and a second compound different from the first compound and represented by one of Chemical Formulae 2A and 2B, an organic thin film transistor, and an electronic device.

Abstract: Disclosed are a compound represented by Chemical Formula 1A or 1B, an organic thin film including the same, a thin film transistor, and an electronic device. In Chemical Formula 1A or 1B, X1, X2, Ar1, R1 to R4, and n1 are the same as described in the detailed description.

Abstract: Disclosed are a compound represented by Chemical Formula 1A or 1B, an organic thin film, a thin film transistor, and an electronic device. In Chemical Formulae 1A and 1B, X1, Ar13 , R1 to R4, and n1 are the same as described in the detailed description.

Abstract: A photoelectric conversion device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and configured to absorb light in at least one part of a wavelength spectrum of light and to convert it into an electric signal, and an organic auxiliary layer between the first electrode and the photoelectric conversion layer and having a higher charge mobility than a charge mobility of the photoelectric conversion layer. An organic sensor may include the photoelectric conversion device. An electronic device may include the organic sensor.

Abstract: A composition includes a product of a condensation reaction between a thermal cross-linking agent and a product of hydrolysis and condensation polymerization of a compound represented by Chemical Formula 1.

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer overlapped with the gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a plurality of holes. The gate insulating layer may include a plurality of recess portions at a surface of the gate insulating layer facing the semiconductor layer. A method of manufacturing the thin film transistor is provided. A thin film transistor array panel and an electronic device may include the thin film transistor.

Abstract: A light emitting composite includes a light emitting element and a three dimensional protection structure bound to the light emitting element and surrounding the light emitting element. The three dimensional protection structure includes a SiO3/2 moiety and a polymerizable functional group. A light emitting structure, an optical sheet, and an electronic device are also disclosed.

Abstract: An insulating ink includes a nanoparticle bonded with a substituent having a polymerizable functional group, at least one of an organosilane compound and polyorganosiloxane, and a solvent.

Abstract: Disclosed are an organic compound selected from a compound represented by Chemical Formula 1A, a compound represented by Chemical Formula 1B, and a combination thereof, an organic thin film including the organic compound, an organic thin film transistor, and an electronic device. The organic compound has liquid crystal properties and exhibits an ordered liquid crystal phase when being heated in a liquid crystal period due to asymmetric substituents and thereby charge mobility may be further improved.

Abstract: Disclosed are a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a first organic semiconductor material and a second semiconductor layer including a second organic semiconductor material. The second semiconductor layer is farther spaced apart from the gate electrode than the first semiconductor layer. A HOMO energy level of the second organic semiconductor material is different from a HOMO energy level of the first organic semiconductor material. A method of manufacturing the thin film transistor is disclosed.

Abstract: A method of synthesizing a fused heteroaromatic compound includes obtaining a first intermediate from a first compound represented by Chemical Formula 1 and a second compound represented by Chemical Formula 2, obtaining a second intermediate including a ring having a chalcogen element from the first intermediate, and obtaining a fused heteroaromatic compound by a cyclization reaction of the second intermediate.

Abstract: An organic compound is represented by Chemical Formula 1, and an organic thin film, an organic thin film transistor, and an electronic device include the organic compound.

Abstract: A synthetic method of a fused heteroaromatic compound includes preparing a first intermediate represented by Chemical Formula 1, obtaining a second intermediate by reacting the first intermediate and an aldehyde compound, obtain a third intermediate by performing deprotection and reduction reactions on the second intermediate, and obtaining a fused heteroaromatic compound by performing a cyclization reaction on the third intermediate.

Abstract: A method of making a chemical product includes reacting a compound represented by Chemical Formula 1 with a metal alkyl chalcogenide using a palladium catalyst and a tertiary phosphine catalyst to obtain a first intermediate represented by Chemical Formula 2, obtaining a second intermediate represented by Chemical Formula 3 from the first intermediate, obtaining a third intermediate from the second intermediate and a compound represented by Chemical Formula 4, obtaining a fourth intermediate including a chalcogen-containing ring from the third intermediate, and performing a cyclization reaction of the fourth intermediate to obtain a fused heteroaromatic compound. A fused heteroaromatic compound obtained by the method, an intermediate thereof, and a synthetic method of the intermediate are disclosed.

Abstract: A synthetic method of a fused heteroaromatic compound includes preparing a first intermediate represented by Chemical Formula 1, obtaining a second intermediate by reacting the first intermediate and an aldehyde compound, obtain a third intermediate by performing deprotection and reduction reactions on the second intermediate, and obtaining a fused heteroaromatic compound by performing a cyclization reaction on the third intermediate.

Abstract: A method of manufacturing an organic thin film transistor includes forming a gate electrode and a gate insulator on a substrate, forming a self-assembled layer from self-assembled layer precursor on the gate insulator and forming an organic semiconductor on the self-assembled layer, a friction force is applied to the surface of the self-assembled layer in at least two directions between forming the self-assembled layer and forming the organic semiconductor, and an organic thin film transistor manufactured by the method, and a display device including the same are provided. A device of treating a surface of a thin film used for the method is provided.