Abstract: A microfluidic chip and a cosmetic manufacturing apparatus including the microfluidic chip are disclosed. The microfluidic chip contains an inlet portion including a first and a second fluid inlets; a dissolution portion including a first and a second micro flow paths in which a first and a second modular raw materials dissolved by the first and the second fluids are pre-loaded, respectively; a confluence including a third micro flow path in which the first and the second fluids and the first and the second modular raw materials converge; a stir portion including a fourth micro flow path which forms a mixed fluid by mixing the first and the second fluids and the first and the second modular raw materials; and a vortexing portion configured to form a cosmetic composition.

Abstract: Provided is a display module including a substrate including a mounting surface, a side surface, and a chamfer portion formed between the mounting surface and the side surface, a plurality of inorganic light emitting diodes mounted on the mounting surface and each including a pair of electrodes electrically connected to the substrate, a black matrix arranged between the plurality of inorganic light emitting diodes, and a cover bonded to the mounting surface and configured to cover the mounting surface, wherein the pair of electrodes are oriented in a direction opposite to a direction in which the plurality of inorganic light emitting diodes emits light, and the cover is provided to extend outward of the side surface in an extension direction of the mounting surface.

Abstract: A display module includes a substrate; a thin film transistor (TFT) layer which is stacked on a front surface of the substrate; a plurality of light emitting diodes electrically connected to a plurality of TFT electrodes arranged on the TFT layer; an anti-reflection layer which is stacked on the TFT layer, has a light-absorbing color that absorbs external light, and fixes in place the plurality of light emitting diodes; and a protective layer stacked on the anti-reflection layer and the plurality of light emitting diodes. The plurality of TFT electrodes and the plurality of light emitting diodes are electrically connected to each other in the anti-reflection layer.

Abstract: A display device a plurality of display modules, each of the plurality of display modules including: a substrate having a mounting surface and a rear surface opposite the mounting surface; a plurality of inorganic light emitting diodes provided on the mounting surface of the substrate; and a frame supporting the plurality of display modules arranged in a matrix, the frame including: a first frame layer contacting the plurality of display modules and including a material having material properties similar to material properties of the substrate; a second frame layer provided behind the first frame layer, and including a metal material; and a third frame layer provided between the first frame layer and the second frame layer and bonding the first frame layer and the second frame layer.

Abstract: A display module is provided. The display module includes a substrate including a mounting surface, on which a plurality of inorganic light emitting devices is mounted, and a side surface; a front cover covering the mounting surface and including a side end that is in a region outwards from the mounting surface; a side cover covering the side surface of the substrate and bonded to a lower surface of the front cover, corresponding to the region outwards from the mounting surface, and the side surface of the substrate; and a light absorbing end member covering the side end of the front cover and configured to prevent light, emitted from the plurality of inorganic light emitting devices, from passing through the side end of the front cover.

Abstract: A display module includes a substrate included a mounting surface on which a plurality of inorganic light emitting devices is mounted and a rear surface opposite the mounting surface, a metal plate facing the rear surface, and an adhesive layer provided between the rear surface of the substrate and the metal plate. An area of the substrate is equal to or greater than an area of the metal plate, the adhesive layer has an area corresponding to an area in which the metal plate faces the substrate, a coefficient of thermal expansion of the substrate is less than a coefficient of thermal expansion of the metal plate, and a ductility of the adhesive layer is greater than a ductility of the substrate and a ductility of the metal plate.

Abstract: Provided is a display module including a substrate including a mounting surface, a side surface, and a chamfer portion formed between the mounting surface and the side surface, a plurality of inorganic light emitting diodes mounted on the mounting surface and each including a pair of electrodes electrically connected to the substrate, a black matrix arranged between the plurality of inorganic light emitting diodes, and a cover bonded to the mounting surface and configured to cover the mounting surface, wherein the pair of electrodes are oriented in a direction opposite to a direction in which the plurality of inorganic light emitting diodes emits light, and the cover is provided to extend outward of the side surface in an extension direction of the mounting surface.

Abstract: A display module may include: (1) a substrate including a mounting surface on which a thin film transistor (TFT) layer is formed, a side surface, and a chamfer portion formed between the mounting surface and the side surface; (2) a plurality of inorganic light emitting diodes (LEDs) disposed on the TFT layer, each of the plurality of inorganic LEDs including a pair of electrodes electrically connected to the TFT layer and disposed to face the mounting surface, and a light emitting surface configured to emit light in a first direction opposite to a second direction that extends from the plurality of inorganic LEDs to the mounting surface of the substrate; and (3) a molding provided to cover the plurality of inorganic LEDs, the chamfer portion of the substrate, and the side surface of the substrate.

Abstract: A thin film transistor gate structure with a three-dimensional multichannel structure is disclosed.The thin film transistor gate structure according to the present invention comprises source/drain electrodes formed so as to be spaced from and opposite to each other on a substrate; semiconductive layers, comprised of a plurality of sub-semiconductive layers, each formed in a row, each end of the sub-semiconductive layers being in ohmic-contact with the source/drain electrodes; gate insulating layers surrounding each of the semiconductive layers; and gate electrodes surrounding each of the gate insulating layers.Accordingly, the whole outerlayers of each sub-semiconductive layer surrounded by the gate electrodes serve as channel regions. As a result, the effective channel area increases, thereby improving the channel conductance and current driving ability.