Abstract: There are provided a method for designing a mechanical apparatus and a device using the same. A method for acquiring shape information of a mechanical apparatus based on target performance information according to an embodiment may include: acquiring a first target performance parameter and a second target performance parameter of the mechanical apparatus; acquiring first shape information by using a first model based on the first target performance parameter and the second target performance parameter; acquiring a first prediction performance parameter by using a second model based on the first shape information; and updating the first model based on at least one of the first target performance parameter, the second target performance parameter or the first prediction performance parameter.

Abstract: A picture generation apparatus and a control method thereof are disclosed. An embodiment of the present disclosure provides a picture generation apparatus including a light source; a Spatial Light Modulator (SLM) configured to output an image using light transmitted from the light source; and a control unit configured to control the light source and the SLM based on at least one of illuminance of the surroundings or content of the image.

Abstract: An example electronic device includes a display, a communication circuit, a memory, and at least one processor configured to, based on a signal for requesting transmission of identification information including a call word for using first mode of an artificial intelligence assistant function of the electronic device being received, from another electronic device, through the communication circuit using first communication method, control the display to display a user interface for requesting user confirmation for transmission of the identification information; control the communication circuit to transmit the identification information to the another electronic device as a result of user confirmation through the user interface; and receive information for using a second communication method from the another electronic device.

Abstract: The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. By comprising the organic electroluminescent compound of the present disclosure, an organic electroluminescent device having improved driving voltage, luminous efficiency, and/or lifespan characteristics can be provided.

Abstract: The present invention relates to a catalyst for hydrogenation of an aromatic compound, which is capable of greatly reducing the inactivation of a catalyst by using a support including a magnesium-based spinel structure, and a preparation method therefor.

Abstract: This invention relates to a method for producing chlorine in a high yield through a hydrogen chloride oxidation reaction and more specifically, this invention is characterized in that chlorine is produced in a high yield by subjecting hydrogen chloride to an oxidation reaction in a mixed gas containing carbon oxide.

Abstract: The present disclosure relates to an organic electroluminescent compound represented by formula 1 and an organic electroluminescent device comprising the same. By comprising the organic electroluminescent compound of the present disclosure, it is possible to provide an organic electroluminescent device having lower operating voltage, higher luminous efficiency and/or longer lifespan properties as compared with a conventional organic electroluminescent device.

Abstract: An image sensor includes a substrate with a first surface opposite a second surface, a pixel isolation pattern defining first and second unit pixels adjacent to each other in the substrate, and first and second separation patterns in the substrate. The first unit pixel includes first and second photoelectric conversion parts along a first direction. The second unit pixel includes third and fourth photoelectric conversion parts along a second direction intersecting the first direction. The first separation pattern extends in the second direction between the first and second photoelectric conversion parts. The second separation pattern extends in the first direction between the third and fourth photoelectric conversion parts. A width of the pixel isolation pattern, a width of the first separation pattern, and a width of the second separation pattern each decrease from the second surface of the substrate toward the first surface of the substrate.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: A power management system for semiconductor manufacturing prevents malfunctions of loading devices when transient power interruption occurs by maintaining power to the facilities for a period of time after the transient power interruption occurs. The system includes an emergency cutoff circuit, a first power controller, and a second power controller. The emergency cutoff circuit prevents trips in a power relay for one second at the time of transient power interruption. The first power controller discharges a DC voltage for a predetermined time period when AC power is not supplied through a power supply line thereto due to transient power interruption. The second power controller receives the DC voltage provided from the first power controller and discharges the DC voltage during a transient power interruption.

Abstract: A power management system for semiconductor manufacturing prevents malfunctions of loading devices when transient power interruption occurs by maintaining power to the facilities for a period of time after the transient power interruption occurs. The system includes an emergency cutoff circuit, a first power controller, and a second power controller. The emergency cutoff circuit prevents trips in a power relay for one second at the time of transient power interruption. The first power controller discharges a DC voltage for a predetermined time period when AC power is not supplied through a power supply line thereto due to transient power interruption. The second power controller receives the DC voltage provided from the first power controller and discharges the DC voltage during a transient power interruption.