Patents by Inventor Jeong-Ki Hwang
Jeong-Ki Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20250065866Abstract: A driving control apparatus includes a sensor device, a memory, and a controller. The driving control apparatus identifies at least one of a driving situation of an ego vehicle, driving information of the ego vehicle, or any combination thereof, using the sensor device; performs coasting control of the ego vehicle based on a first driving mode, when the at least one of the driving situation, the driving information, or the any combination thereof meets a specified condition; identifies risk information including at least one of at least one time to collision (TTC), a timegap with a forward vehicle, a relative speed to the forward vehicle, or any combination thereof; and determines whether to switch a driving mode to a second driving mode or a third driving mode including braking control, based on the result of comparing the risk information with a threshold.Type: ApplicationFiled: December 12, 2023Publication date: February 27, 2025Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATIONInventors: Il Hwan Kim, Kyung Joo Bang, Jae Woong Hwang, Dong Hyuk Kim, Jeong Ki Hong
-
Publication number: 20250065908Abstract: Disclosed is a device for controlling a vehicle. The device includes a memory and a controller. For example, the device identifies at least one score in association with a travel state of a host vehicle, identifies a final score using the at least one score and at least one weight respectively corresponding to the at least one score, generates a braking control signal based on the final score, and performs braking control for the host vehicle based on the braking control signal.Type: ApplicationFiled: December 11, 2023Publication date: February 27, 2025Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATIONInventors: Jae Woong Hwang, Kyung Joo Bang, Il Hwan Kim, Dong Hyuk Kim, Jeong Ki Hong
-
Publication number: 20250050878Abstract: A device for controlling autonomous driving is introduced. A device may comprise a sensor, a memory storing instructions, and a controller operatively connected to the sensor and the memory, wherein the instructions, when executed by the controller, may cause the device to detect, based on the sensor, information associated with at least one of a first vehicle or a second vehicle, determine at least one of whether a distance between the first vehicle and the second vehicle satisfies a distance condition, or whether a travel speed of the first vehicle satisfies a speed condition; and control the first vehicle based on at least some of the information and neither the distance condition nor the speed condition being satisfied, by causing a first deceleration, or based on at least one of the distance condition or the speed condition being satisfied, by causing a second deceleration greater than the first deceleration.Type: ApplicationFiled: November 20, 2023Publication date: February 13, 2025Inventors: Jeong Ki Hong, Kyung Joo Bang, Jae Woong Hwang, Dong Hyuk Kim, Il Hwan Kim
-
Publication number: 20230403839Abstract: A semiconductor device comprises a first gate structure extending in a first direction and including a first gate electrode and a first gate capping pattern, a second gate structure spaced apart from the first gate structure and extending in the first direction, and including a second gate electrode and a second gate capping pattern, an active pattern extending in a second direction, the active pattern below the second gate structure, an epitaxial pattern on one side of the second gate structure and on the active pattern, a gate contact connected to the first gate electrode, and a node contact connected to the second gate electrode and to the epitaxial pattern. An upper surface of the gate contact is at a same level as the first gate capping pattern, and an upper surface of the node contact is lower than the upper surface of the first gate capping pattern.Type: ApplicationFiled: August 25, 2023Publication date: December 14, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Sung Hun JUNG, Heon Jong SHIN, Min Chan GWAK, Sung Moon LEE, Jeong Ki HWANG
-
Patent number: 11778801Abstract: A semiconductor device comprises a first gate structure extending in a first direction and including a first gate electrode and a first gate capping pattern, a second gate structure spaced apart from the first gate structure and extending in the first direction, and including a second gate electrode and a second gate capping pattern, an active pattern extending in a second direction, the active pattern below the second gate structure, an epitaxial pattern on one side of the second gate structure and on the active pattern, a gate contact connected to the first gate electrode, and a node contact connected to the second gate electrode and to the epitaxial pattern. An upper surface of the gate contact is at a same level as the first gate capping pattern, and an upper surface of the node contact is lower than the upper surface of the first gate capping pattern.Type: GrantFiled: February 25, 2021Date of Patent: October 3, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Hun Jung, Heon Jong Shin, Min Chan Gwak, Sung Moon Lee, Jeong Ki Hwang
-
Publication number: 20220020753Abstract: A semiconductor device comprises a first gate structure extending in a first direction and including a first gate electrode and a first gate capping pattern, a second gate structure spaced apart from the first gate structure and extending in the first direction, and including a second gate electrode and a second gate capping pattern, an active pattern extending in a second direction, the active pattern below the second gate structure, an epitaxial pattern on one side of the second gate structure and on the active pattern, a gate contact connected to the first gate electrode, and a node contact connected to the second gate electrode and to the epitaxial pattern. An upper surface of the gate contact is at a same level as the first gate capping pattern, and an upper surface of the node contact is lower than the upper surface of the first gate capping pattern.Type: ApplicationFiled: February 25, 2021Publication date: January 20, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Sung Hun JUNG, Heon Jong SHIN, Min Chan GWAK, Sung Moon LEE, Jeong Ki HWANG
-
Publication number: 20030012327Abstract: An upper guide structure for simplification of a refueling procedure in a nuclear power plant includes an upper guide cylinder inserted in an upper end portion of a core support barrel installed inside a nuclear reactor vessel to guide a control rod assembly, a support plate installed at a lower end of the upper guide cylinder and having a plurality of first control rod insertion holes formed therein, hollow control rod assembly upper guide tubes respectively installed in the first control rod insertion holes, and a nuclear fuel alignment plate installed at lower ends of the control rod assembly upper guide tubes and including a plurality of second control rod insertion holes formed at positions corresponding to the control rod assembly upper guide tubes, each of the second control rod insertion holes having an inner diameter which increases to an lower end thereof so that the nuclear fuel assembly guide rod is inserted even when a position alignment error of the nuclear fuel assembly is great, and first coolType: ApplicationFiled: July 10, 2002Publication date: January 16, 2003Inventors: Jeong-Ki Hwang, Dae-Heon Lim, Cheol-Soo Maeng, Min-Gyu Kim, Heuy-Gap Song, Jae-Hyun Bae, Sang-Gyoon Chang
-
Patent number: 6053042Abstract: A method and device of measuring a water level of a frequency analysis type is disclosed. The device is consisted of a pipe type of which immersed length is in a proportion to the water level and which is installed in a container having a fluid, a signal detecting device which has an impact apparatus to provide a source signal periodically or continuously and a impact detecting sensor(s) which gets a response signal of the pipe by the impact apparatus, and a signal analyzer which processes the signal from the impact detecting sensor. The method comprises steps of: generating a source signal to the pipe by the impact apparatus; detecting the response signal of the pipe according the water level by the impact detecting sensor; analyzing the response signal to the frequency response spectra by the signal analyzer; and measuring the water level by comparing to the predetermined frequencies which was obtained by the signal analyzer.Type: GrantFiled: September 19, 1997Date of Patent: April 25, 2000Assignee: Korea Power Engineering Company, IncorporationInventors: Jeong-Ki Hwang, Moon-Wook Lee, Sang-Gyoon Chang, Hyun-Min Kim, Choong-Hee Jo
-
Patent number: 5633901Abstract: A nuclear containment arrangement has a permanent pool cavity seal extending across an annular gap between a reactor pressure vessel and a refueling pool wall to provide a water tight seal therebetween. A seal plate has a support ring with a cylindrical section weldedly connected to an outer seal ring on an embedded ring. A J-shaped flexible ring attached to the seal plate allows axial and radial movement of the reactor vessel during thermal expansion and contraction. The inner portion of the seal plate overhangs the J-shaped flexible ring thereby to protect it from damage resulting from an object dropped thereon. Cooperating access holes and access hole covers in the seal plate provide access to the refueling pool cavity. Support arms underneath the seal plate are provided. Each support arm may have leveling screws to adjust the level of the seal plate.Type: GrantFiled: July 18, 1995Date of Patent: May 27, 1997Assignee: Korea Atomic Energy Research InstituteInventors: In-Yong Kim, Moon-Wook Lee, Gyu-Mahn Lee, Jeong-Ki Hwang, Tae-Myung Shin, Beom-Shig Kim