Abstract: A semiconductor device comprises a first gate structure extending in a first direction and including a first gate electrode and a first gate capping pattern, a second gate structure spaced apart from the first gate structure and extending in the first direction, and including a second gate electrode and a second gate capping pattern, an active pattern extending in a second direction, the active pattern below the second gate structure, an epitaxial pattern on one side of the second gate structure and on the active pattern, a gate contact connected to the first gate electrode, and a node contact connected to the second gate electrode and to the epitaxial pattern. An upper surface of the gate contact is at a same level as the first gate capping pattern, and an upper surface of the node contact is lower than the upper surface of the first gate capping pattern.

Abstract: A semiconductor device comprises a first gate structure extending in a first direction and including a first gate electrode and a first gate capping pattern, a second gate structure spaced apart from the first gate structure and extending in the first direction, and including a second gate electrode and a second gate capping pattern, an active pattern extending in a second direction, the active pattern below the second gate structure, an epitaxial pattern on one side of the second gate structure and on the active pattern, a gate contact connected to the first gate electrode, and a node contact connected to the second gate electrode and to the epitaxial pattern. An upper surface of the gate contact is at a same level as the first gate capping pattern, and an upper surface of the node contact is lower than the upper surface of the first gate capping pattern.

Abstract: A semiconductor device comprises a first gate structure extending in a first direction and including a first gate electrode and a first gate capping pattern, a second gate structure spaced apart from the first gate structure and extending in the first direction, and including a second gate electrode and a second gate capping pattern, an active pattern extending in a second direction, the active pattern below the second gate structure, an epitaxial pattern on one side of the second gate structure and on the active pattern, a gate contact connected to the first gate electrode, and a node contact connected to the second gate electrode and to the epitaxial pattern. An upper surface of the gate contact is at a same level as the first gate capping pattern, and an upper surface of the node contact is lower than the upper surface of the first gate capping pattern.

Abstract: An upper guide structure for simplification of a refueling procedure in a nuclear power plant includes an upper guide cylinder inserted in an upper end portion of a core support barrel installed inside a nuclear reactor vessel to guide a control rod assembly, a support plate installed at a lower end of the upper guide cylinder and having a plurality of first control rod insertion holes formed therein, hollow control rod assembly upper guide tubes respectively installed in the first control rod insertion holes, and a nuclear fuel alignment plate installed at lower ends of the control rod assembly upper guide tubes and including a plurality of second control rod insertion holes formed at positions corresponding to the control rod assembly upper guide tubes, each of the second control rod insertion holes having an inner diameter which increases to an lower end thereof so that the nuclear fuel assembly guide rod is inserted even when a position alignment error of the nuclear fuel assembly is great, and first cool

Abstract: A method and device of measuring a water level of a frequency analysis type is disclosed. The device is consisted of a pipe type of which immersed length is in a proportion to the water level and which is installed in a container having a fluid, a signal detecting device which has an impact apparatus to provide a source signal periodically or continuously and a impact detecting sensor(s) which gets a response signal of the pipe by the impact apparatus, and a signal analyzer which processes the signal from the impact detecting sensor. The method comprises steps of: generating a source signal to the pipe by the impact apparatus; detecting the response signal of the pipe according the water level by the impact detecting sensor; analyzing the response signal to the frequency response spectra by the signal analyzer; and measuring the water level by comparing to the predetermined frequencies which was obtained by the signal analyzer.

Abstract: A nuclear containment arrangement has a permanent pool cavity seal extending across an annular gap between a reactor pressure vessel and a refueling pool wall to provide a water tight seal therebetween. A seal plate has a support ring with a cylindrical section weldedly connected to an outer seal ring on an embedded ring. A J-shaped flexible ring attached to the seal plate allows axial and radial movement of the reactor vessel during thermal expansion and contraction. The inner portion of the seal plate overhangs the J-shaped flexible ring thereby to protect it from damage resulting from an object dropped thereon. Cooperating access holes and access hole covers in the seal plate provide access to the refueling pool cavity. Support arms underneath the seal plate are provided. Each support arm may have leveling screws to adjust the level of the seal plate.