Abstract: Disclosed are a binder composition for an all-solid-state secondary battery, including a copolymer including a conjugated diene-based monomer, an aromatic vinyl-based monomer, and an ethylenically unsaturated acid monomer, a trithiocarbonate-based compound, a mercaptan-based compound, and a solvent, wherein a weight average molecular weight (Mw) of the copolymer is 50,000 to 200,000, and a molecular weight distribution (Mw/Mn) is 1 to 5, a method of preparing the same, a slurry composition for a cathode or a solid electrolyte including the same, and a secondary battery manufactured therefrom.

Abstract: A method of manufacturing a film antenna includes: preparing a carrier film formed of an insulation polymer material; forming an antenna radiator on at least one side of the carrier film by one of sputtering and deposition; inserting the carrier film with the antenna radiator formed thereon into a mold having a shape of a mobile communication terminal case; and forming a mobile communication terminal case integrally formed with the carrier film by injecting a molding material into the mold.

Abstract: A method of manufacturing a film antenna including: preparing a carrier film formed of an insulation polymer material; forming an antenna radiator on at least one side of the carrier film by one of sputtering and deposition; inserting the carrier film with the antenna radiator formed thereon into a mold having a shape of a mobile communication terminal case; and forming a mobile communication terminal case integrally formed with the carrier film by injecting a molding material into the mold.

Abstract: There is provided a contact failure inspection system and method for semiconductor devices and a method of manufacturing semiconductor devices. Using digitized values for electron signals detected using a scanning electron microscope, contacts can be inspected to identify failures such as non-open contact holes. The contact failure inspection is performed by comparing the electron signal value detected from a unit area including at least one contact hole with values representative of the electron signal corresponding to a normal contact.

Abstract: There is disclosed apparatus and method for recycling waste paint, for completely removing a bad smell generated in the course of drying up the waste paint and extracting a bad smell from a filler. The method for recycling waste paint comprises the steps of: shaping the waste paint into a cake of a predetermine thickness while removing water from the waste paint using centrifugal force of a dehydrator; drying up and dehydrating the cake-shaped waste paint at about 80° C.˜300° C. using a twin screw extruding method to remove water; drying up the waste paint dried up at the above step at about 100° C.˜300° C. using a vacuum dry method to remove remaining water; pulverizing the waste paint dried up by the vacuum dry method into minute powder; separating the pulverized waste paint based upon density; and collecting and discharging dust, vapor, and gas generated during the above steps.

Abstract: A method for fabricating a semiconductor device, including a lower electrode layer having hemispherical grains, an upper electrode layer, and a dielectric layer interposed between the lower and upper electrode layers. Si-dangling bonds existing on the surface of an amorphous silicon layer dry etched using a lower electrode layer pattern are controlled so that an active migration of silicon atoms from the amorphous silicon layer surface is achieved, so that growth of hemispherical grains on the surface of the amorphous silicon layer is enabled to provide a lower electrode layer with an increased surface area. The amorphous silicon layer is formed with a passivation film of hydrogen thereon which suppresses the growth of natural oxide films and which can be desorbed from that layer at a low temperature during an annealing process carried out in an ultra-high vacuum CVD device for the formation of hemispherical grains.

Abstract: A polishing method and apparatus for a semiconductor wafer includes a loading section having a loading platform for mounting a loading cassette, and a loading robot arm for transferring a wafer from the loading cassette. The apparatus includes a standby stage having a pre-polishing stand on which the wafer is placed, and a post-polishing stand for holding the wafer after polishing, and a polishing table on which a polishing process is performed. A wafer moving device transfers the wafer from the pre-polishing stand to the polishing table and back to the post-polishing stand. An unloading section includes an unloading platform for mounting an unloading cassette, and an unloading robot arm for transferring the wafer to the unloading cassette. A measurement device, proximal to the unloading stage, analyzes a polishing state of the wafer and then a cleaning device cleans the wafer after the wafers are analyzed.

Abstract: A Faraday cup assembly of a semiconductor ion-implanting apparatus is installed adjacent to a disc upon which a wafer can be mounted for performing an ion implantation. A micro-discharge is prevented because the Faraday cup has an inner wall covered by a conductive thin film or has a discharge tag of a predetermined size embedded in its inner wall. An ion implanting process utilizing such an apparatus ensures that contamination and quality inferiority of the wafer are prevented by preventing the build up of an insulating layer of carbon impurities on the inner wall of the Faraday cup assembly.

Abstract: An advanced exposure apparatus combines a quadrupole illumination system and an annular illumination system, and includes a light source, an adjusting portion comprising a filter to limit the light emitted from the light source, a refractive/diffractive portion for refracting and diffracting the light emitted from the adjusting portion and a focussing portion for focussing the light emitted from the refractive/diffractive portion onto a wafer, wherein the filter is provided with first group holes and second group holes comprising four holes, respectively. In an exposure method using such an apparatus, uniform light intensity distribution can be formed on an image formation plane (or wafer) while improved resolution is maintained. Since image formation information (i.e, light passing through a mask pattern) becomes uniform, a very nearly circular contact hole pattern can be formed, to reduce the proximity effect.