Abstract: An apparatus for coating a photoresist onto a substrate includes a slit nozzle to apply the photoresist to the substrate, a slit nozzle driving unit to move the slit nozzle, and a photoresist supply unit connected to the slit nozzle to supply the photoresist to the slit nozzle.

Abstract: A slit coater including buffer members having elasticity and installed at both sides of a slit nozzle unit, compensating for a height difference between both sides, preventing breakdown due to excessive stress generated by the height, and reducing set-up time. The slit coater includes: a table on which an object to be processed is mounted; a slit nozzle unit formed above the table for applying coating solution onto the object; a driving unit moving the slit nozzle unit in a predetermined direction; and buffer members having elasticity installed at both sides of the slit nozzle unit.

Abstract: An apparatus for fabricating a liquid crystal display panel includes a slit nozzle for applying a photo-resist liquid on a substrate, a nozzle driver for driving the slit nozzle, an air intake for inhaling air and/or impurities on the substrate through the slit nozzle before photo-resist is deposited on the substrate, and a gas supplier for supplying a gas through one or more channels in the slit nozzle to the substrate after the photo-resist is deposited on the substrate.

Abstract: An apparatus for coating a photoresist onto a substrate includes a slit nozzle to apply the photoresist to the substrate, a slit nozzle driving unit to move the slit nozzle, and a photoresist supply unit connected to the slit nozzle to supply the photoresist to the slit nozzle.

Abstract: A sputtering apparatus comprises a plurality of independent plasma generation regions formed in a single process chamber; a cathode disposed at an edge portion of each of the plurality of independent plasma generation regions; a gas supply line to supply a reaction gas to the plurality of independent plasma generation regions; and a shielding film disposed between the plurality of independent plasma generation regions to prevent reaction gases generated in the plurality of independent plasma generation regions from being mixed and introduced to an outside.

Abstract: A method for preventing a diffused reflection from being generated in patterning a via hole for the metal interconnection is disclosed. The disclosed method includes: forming an insulation layer on a semiconductor substrate, wherein elements for operating a semiconductor device are formed on the semiconductor substrate; forming first photoresist patterns on the insulation layer; etching the insulation layer in order to form a first via hole using the first photoresist patterns and then forming a resulting structure; coating a first anti-reflecting coating layer on the resulting structure with a low viscosity; coating a second anti-reflecting coating layer on the resulting structure with a low viscosity; forming second photoresist patterns on the second anti-reflecting coating layer; and forming a second via hole using the second photoresist patterns.

Abstract: A phase shift mask and a fabrication method thereof are used in a semiconductor light exposing process, where a CD (Critical Dimension) formed on a wafer is the same in all directions, even when a pattern is arranged on the mask at an anisotropic pitch. The phase shift mask includes a number of light transmitting regions and first and second phase shift regions arranged among the light transmitting regions. The first and second phase shift regions have a refractive index different from that of the light transmitting region. The first and second phase shift regions also have a transmittance different from each other.

Abstract: The present invention comprises an improved method of forming the source voltage lines, connection lines, and high load resistors for use in HLR SRAM devices. The source voltage lines, connection lines, and high load resistors are formed from a single polysilicon film that is selectively silicided to produce the low resistance structures while preserving the as-deposited polysilicon resistivity for formation of the high load resistor. The improved resistance control allows reduced feature size and increased pattern density.

Abstract: A method for preventing a diffused reflection from being generated in patterning a via hole for the metal interconnection is disclosed. The disclosed method includes: forming an insulation layer on a semiconductor substrate, wherein elements for operating a semiconductor device are formed on the semiconductor substrate; forming first photoresist patterns on the insulation layer; etching the insulation layer in order to form a first via hole using the first photoresist patterns and then forming a resulting structure; coating a first anti-reflecting coating layer on the resulting structure with a low viscosity; coating a second anti-reflecting coating layer on the resulting structure with a low viscosity; forming second photoresist patterns on the second anti-reflecting coating layer; and forming a second via hole using the second photoresist patterns.

Abstract: A phase shift mask and a fabrication method thereof are used in a semiconductor light exposing process, where a CD (Critical Dimension) formed on a wafer is the same in all directions, even when a pattern is arranged on the mask at an anisotropic pitch. The phase shift mask includes a number of light transmitting regions and first and second phase shift regions arranged among the light transmitting regions. The first and second phase shift regions have a refractive index different from that of the light transmitting region. The first and second phase shift regions also have a transmittance different from each other.