Patents by Inventor Jeong Kyun RA

Jeong Kyun RA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250095961
    Abstract: Provided is an inductively coupled plasma device for treating an exhaust gas, the inductively coupled plasma device including: an inductively coupled plasma reactor installed on an exhaust pipe through which exhaust gas generated from a process chamber of a semiconductor manufacturing facility is discharged, the inductively coupled plasma reactor configured to generate inductively coupled plasma and treat the exhaust gas per repeated operation cycle; an electric power supply configured to supply radio frequency power to the inductively coupled plasma reactor through a transmission line; and an impedance matching unit configured to match impedance at a side of the inductively coupled plasma reactor and impedance at a side of the electric power supply to each other.
    Type: Application
    Filed: April 25, 2023
    Publication date: March 20, 2025
    Applicant: LOT CES CO., LTD.
    Inventors: Jin Ho BAE, Jeong Kyun RA, Min Jae KIM
  • Patent number: 12121857
    Abstract: A piping apparatus includes an exhaust pipe providing a passage through which the exhaust gas discharged, and a harmful gas treatment device positioned between a rear end of the vacuum pump and a front end of the exhaust pipe or positioned on the exhaust pipe, wherein the harmful gas treatment device includes a heating means for increasing the temperature of the exhaust gas so as to prevent a sublimable component, from among components included in the exhaust gas, from being sublimated and accumulated inside the exhaust pipe, and the heating means is positioned on a section including a sublimation condition occurrence point, at which a sublimation condition of the sublimable component occurs, and an upstream side of the sublimation condition occurrence point on the exhaust pipe, and the sublimation condition is a temperature condition for the pressure of the sublimable component.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: October 22, 2024
    Assignees: LOT CES CO., LTD., LOT VACUUM CO., LTD.
    Inventors: Jin Ho Bae, Yu Jin Lee, Hyung Jun Kim, Jeong Kyun Ra, Ho Sik Kim, Won Hong Ju
  • Publication number: 20210245098
    Abstract: A piping apparatus includes an exhaust pipe providing a passage through which the exhaust gas discharged, and a harmful gas treatment device positioned between a rear end of the vacuum pump and a front end of the exhaust pipe or positioned on the exhaust pipe, wherein the harmful gas treatment device includes a heating means for increasing the temperature of the exhaust gas so as to prevent a sublimable component, from among components included in the exhaust gas, from being sublimated and accumulated inside the exhaust pipe, and the heating means is positioned on a section including a sublimation condition occurrence point, at which a sublimation condition of the sublimable component occurs, and an upstream side of the sublimation condition occurrence point on the exhaust pipe, and the sublimation condition is a temperature condition for the pressure of the sublimable component.
    Type: Application
    Filed: April 17, 2019
    Publication date: August 12, 2021
    Applicants: LOT CES CO., LTD., LOT VACUUM CO., LTD.
    Inventors: Jin Ho BAE, Yu Jin LEE, Hyung Jun KIM, Jeong Kyun RA, Ho Sik KIM, Won Hong JU