Abstract: A method for fabricating an image sensor includes forming an insulation layer over a substrate in a logic circuit region and a pixel region, forming a photoresist over the insulation layer, patterning the photoresist to form a photoresist pattern where the insulation layer in the pixel region is exposed and the insulation layer in the logic circuit region is not exposed, wherein a thickness of the photoresist pattern is gradually decreased in an interfacial region between the pixel region and the logic circuit region in a direction of the logic circuit region to the pixel region, and performing an etch back process over the insulation layer and the photoresist pattern in conditions that an etch rate of the photoresist pattern are substantially the same as that of the insulation layer.

Abstract: A method for fabricating an image sensor includes forming an insulation layer over a substrate in a logic circuit region and a pixel region, forming a photoresist over the insulation layer, patterning the photoresist to form a photoresist pattern where the insulation layer in the pixel region is exposed and the insulation layer in the logic circuit region is not exposed, wherein a thickness of the photoresist pattern is gradually decreased in an interfacial region between the pixel region and the logic circuit region in a direction of the logic circuit region to the pixel region, and performing an etch back process over the insulation layer and the photoresist pattern in conditions that an etch rate of the photoresist pattern are substantially the same as that of the insulation layer.

Abstract: A method for fabricating an image sensor includes forming an insulation layer over a substrate in a logic circuit region and a pixel region, forming a photoresist over the insulation layer, patterning the photoresist to form a photoresist pattern where the insulation layer in the pixel region is exposed and the insulation layer in the logic circuit region is not exposed, wherein a thickness of the photoresist pattern is gradually decreased in an interfacial region between the pixel region and the logic circuit region in a direction of the logic circuit region to the pixel region, and performing an etch back process over the insulation layer and the photoresist pattern in conditions that an etch rate of the photoresist pattern are substantially the same as that of the insulation layer.

Abstract: A method for fabricating an image sensor includes forming an insulation layer over a substrate in a logic circuit region and a pixel region, forming a photoresist over the insulation layer, patterning the photoresist to form a photoresist pattern where the insulation layer in the pixel region is exposed and the insulation layer in the logic circuit region is not exposed, wherein a thickness of the photoresist pattern is gradually decreased in an interfacial region between the pixel region and the logic circuit region in a direction of the logic circuit region to the pixel region, and performing an etch back process over the insulation layer and the photoresist pattern in conditions that an etch rate of the photoresist pattern are substantially the same as that of the insulation layer.

Abstract: A method for fabricating an image sensor includes forming an insulation layer over a substrate in a logic circuit region and a pixel region, forming a photoresist over the insulation layer, patterning the photoresist to form a photoresist pattern where the insulation layer in the pixel region is exposed and the insulation layer in the logic circuit region is not exposed, wherein a thickness of the photoresist pattern is gradually decreased in an interfacial region between the pixel region and the logic circuit region in a direction of the logic circuit region to the pixel region, and performing an etch back process over the insulation layer and the photoresist pattern in conditions that an etch rate of the photoresist pattern are substantially the same as that of the insulation layer.

Abstract: Disclosed is a method for forming a plurality of microlenses of an image sensor capable of making no gap between the plurality of the microlenses. The method for fabricating a microlens array includes the steps of: depositing a first photoresist layer on a semi-finished substrate; selectively patterning the first photoresist layer, thereby forming a first photoresist layer pattern; forming a plurality of first microlenses by flowing the first photoresist pattern; depositing a second photoresist layer on the first microlenses and the semi-finished substrate; forming a second photoresist pattern between the first microlenses by selectively patterning the second photoresist layer; and forming a plurality of second microlenses between the first microlenses by flowing the second photoresist pattern.