Abstract: The present invention relates to a process for preparing phenolic polymers utilizing Coprinus cinereus peroxidase. More particularly, the present invention relates to a process for preparing phenolic polymers by polymerizing phenolic monomers with Coprinus cinereus peroxidase instead of using typical peroxidase which essentially requires the use of toxic formalin or peroxidase of plant origin which is very costly and easily deactivated by hydrogen peroxide in the polymerization of phenolic monomers, wherein the polymerization is conducted in the presence of a polar organic solvent under mild reaction conditions of atmospheric temperature and pressure to economically produce desired phenolic polymers having excellent water and chemical resistances with high yield.

Abstract: The present invention relates to a process for preparing phenolic polymers utilizing Coprinus cinereus peroxidase. More particularly, the present invention relates to a process for preparing phenolic polymers by polymerizing phenolic monomers with Coprinus cinereus peroxidase instead of using typical peroxidase which essentially requires the use of toxic formalin or peroxidase of plant origin which is very costly and easily deactivated by hydrogen peroxide in the polymerization of phenolic monomers, wherein the polymerization is conducted in the presence of a polar organic solvent under mild reaction conditions of atmospheric temperature and pressure to economically produce desired phenolic polymers having excellent water and chemical resistances with high yield.

Abstract: Provided are a flash memory system and a data reading method thereof, the method including serially reading groups of data and parity codes corresponding to each of the respective groups from a page buffer; calculating the parity for each serially read group; checking for errors in each serially read group by comparing each calculated parity with a corresponding serially read parity code, respectively; and providing an output signal indicative of any comparative parity errors detected, wherein the reading of each group of data is followed by the reading of the parity code for the group, and the checking for errors in each group of data is done during the serial reading operation.

Abstract: Provided are a flash memory system and a data reading method thereof, the method including serially reading groups of data and parity codes corresponding to each of the respective groups from a page buffer; calculating the parity for each serially read group; checking for errors in each serially read group by comparing each calculated parity with a corresponding serially read parity code, respectively; and providing an output signal indicative of any comparative parity errors detected, wherein the reading of each group of data is followed by the reading of the parity code for the group, and the checking for errors in each group of data is done during the serial reading operation.

Abstract: Provided are a flash memory system and a data reading method thereof, the method including serially reading groups of data and parity codes corresponding to each of the respective groups from a page buffer; calculating the parity for each serially read group; checking for errors in each serially read group by comparing each calculated parity with a corresponding serially read parity code, respectively; and providing an output signal indicative of any comparative parity errors detected, wherein the reading of each group of data is followed by the reading of the parity code for the group, and the checking for errors in each group of data is done during the serial reading operation.

Abstract: Provided are a flash memory system and a data writing method thereof, the method including (a) transmitting a predetermined command and an address signal to a flash memory device included in the flash memory system, (b) transmitting data to the flash memory device, and (c) generating a parity code for the data and transmitting the parity code to the flash memory device, where the steps (b) and (c) are repeated twice or more; and where the data and the corresponding parity codes are written in a page buffer of the flash memory device irrespective of a data field and a spare field.

Abstract: Provided are a flash memory system and a data writing method thereof, the method including (a) transmitting a predetermined command and an address signal to a flash memory device included in the flash memory system, (b) transmitting data to the flash memory device, and (c) generating a parity code for the data and transmitting the parity code to the flash memory device, where the steps (b) and (c) are repeated twice or more; and where the data and the corresponding parity codes are written in a page buffer of the flash memory device irrespective of a data field and a spare field.

Abstract: Provided are a flash memory system and a data writing method thereof, the method including (a) transmitting a predetermined command and an address signal to a flash memory device included in the flash memory system, (b) transmitting data to the flash memory device, and (c) generating a parity code for the data and transmitting the parity code to the flash memory device, where the steps (b) and (c) are repeated twice or more; and where the data and the corresponding parity codes are written in a page buffer of the flash memory device irrespective of a data field and a spare field.

Abstract: Provided are a flash memory system and a data writing method thereof, the method including (a) transmitting a predetermined command and an address signal to a flash memory device included in the flash memory system, (b) transmitting data to the flash memory device, and (c) generating a parity code for the data and transmitting the parity code to the flash memory device, where the steps (b) and (c) are repeated twice or more; and where the data and the corresponding parity codes are written in a page buffer of the flash memory device irrespective of a data field and a spare field.