Abstract: A substrate processing apparatus includes a chamber including a first space and a second space, a substrate support in the first space and configured to support a substrate, a plasma source configured to generate plasma in the second space, an ion blocker between the second space and the first space, the ion blocker including through-holes configured to pass therethrough radicals of the plasma from the second space to the first space and provide the radicals to the substrate, and a temperature controller including a plurality of heaters connected to the ion blocker, one or more chillers, and a controller configured to control output of the plurality of heaters and output of the one or more chillers, where the ion blocker includes a plurality of regions, each of the plurality of regions including a heating line, one or more boundary regions.

Abstract: Provided is an apparatus configured to measure radical spatial density distribution including a process chamber including a viewport, a driving device configured to move a moving wall inside the process chamber, a light source configured to generate light, a collimator disposed in the viewport of the process chamber and configured to transmit light received from the light source to the moving wall and receive light reflected from the moving wall, and a spectrometer configured to receive the reflected light from the collimator, and measure radical spatial density based on analyzing an absorption amount of a spectrum of the received light.

Abstract: Disclosed are a method for cleaning a substrate, an apparatus for cleaning a substrate, and a method for fabricating a semiconductor device using the same. The method may include cleaning a substrate in a wet process, providing a supercritical fluid onto the substrate to remove moisture from the substrate, and cleaning the substrate in a dry process to remove defect particles from a substrate, which are produced by the supercritical fluid.

Abstract: Disclosed are a method for cleaning a substrate, an apparatus for cleaning a substrate, and a method for fabricating a semiconductor device using the same. The method may include cleaning a substrate in a wet process, providing a supercritical fluid onto the substrate to remove moisture from the substrate, and cleaning the substrate in a dry process to remove defect particles from a substrate, which are produced by the supercritical fluid.